RTAX2000SL-1LG1152V vs RTAX2000S-1LG624V Comparaison
Comparaison détaillée côte à côte de RTAX2000SL-1LG1152V par Microchip Technology et RTAX2000S-1LG624V par Microchip Technology. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Microchip Technology
RTAX2000SL-1LG1152V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000SL-1LG1152V ✓ ActifMicrochip Technology
RTAX2000S-1LG624V - 2M-Gate Rad-Tolerant Antifuse FPGA | Microchip
RTAX2000S-1LG624V ✓ ActifComparaison des spécifications
| Paramètre | RTAX2000SL-1LG1152V | RTAX2000S-1LG624V |
|---|---|---|
| Marque | Microchip Technology | Microchip Technology |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,00 | $0,00 |
| Family | RTAX-S/SL Radiation-Tolerant FPGAs | — |
| Equivalent Gate Count | 2,000,000 gates | — |
| Logic Cells | 32,256 | — |
| Configurable Logic Blocks (CLBs) | 21,504 | 21,504 |
| Programming Technology | Antifuse (one-time programmable) | One-time programmable antifuse, nonvolatile |
| Radiation Tolerance | Radiation-tolerant (space flight grade) | — |
| Speed Grade | -1 | -1 |
| Boîtier | CG1152 (1152-pin ceramic column grid array) | CG624, 624-pin ceramic column grid array |
| Quality Suffix | V (flight grade) | — |
| Configuration | Live at power-up, single chip (no external boot PROM) | Single-chip, live at power-up (no boot device required) |
| Core Voltage | [DATA_NEEDED: core voltage] | — |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | — |
| Process Technology | Digital CMOS | Digital CMOS |
| Type de montage | Surface Mount | Surface Mount |
| User I/O | [DATA_NEEDED: user I/O count] | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Equivalent System Gates | — | 2,000,000 gates |
| User I/Os (maximum, family) | — | Up to 684 |
| Embedded Memory | — | Up to 540 kbits SRAM with optional EDAC protection |
| Total Ionizing Dose (TID), functional | — | 300 krad (Si) |
| Total Ionizing Dose (TID), parametric | — | 200 krad (Si) |
| SEU Immunity | — | Less than 1E-10 errors per bit-day |
| Package Temperature Suffix | — | V (space/military screening variant) |
| Family Lineage | — | RTAX-S/SL, based on commercial Axcelerator family |
| Plage de température de fonctionnement | — | [DATA_NEEDED: operating temperature range] |
| Core Supply Voltage | — | [DATA_NEEDED: core supply voltage] |