SM4036NHKP vs BSC0901NSATMA1 Vergleich
Detaillierter Direktvergleich von SM4036NHKP von Sinopower Semiconductor und BSC0901NSATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Sinopower Semiconductor
SM4036NHKP - 40V 80A N-Channel MOSFET, PDFN-8 | Sinopower
SM4036NHKP ✓ Aktiv
Spezifikationsvergleich
| Parameter | SM4036NHKP | BSC0901NSATMA1 |
|---|---|---|
| Marke | Sinopower Semiconductor | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,19 | $0,78 |
| Transistortyp | N-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) | 80 A | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) in mOhm] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th)] |
| Gehäuse | PDFN-8 (DFN5x6) 5x6 mm | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm |
| Montageart | Surface Mount | Surface Mount |
| Marking Code | 4036NH | — |
| Betriebstemperaturbereich | [DATA_NEEDED: junction temperature range] | -55C to +150C |
| Power Dissipation (PD) | [DATA_NEEDED: PD max] | — |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | — |
| Avalanche Rating | Yes (per datasheet) | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | — |
| RoHS-Status | Compliant (per Sinopower product page) | Compliant |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 30V |
| Technology | — | N-Channel Trench MOSFET (OptiMOS) |
| Drain-to-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Continuous Drain Current (ID) at Ta | — | 28 A |
| On-State Resistance RDS(on) Max at VGS=10V | — | 1.9 mOhm |
| On-State Resistance RDS(on) Typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical] |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy (EAS) | — | 80 mJ |
| Power Dissipation (PD) at Tc | — | 69 W |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Feuchtigkeitsempfindlichkeitsgrad (MSL) | — | 1 |
| Built-in Body Diode | — | Yes |
| Configuration | — | Single N-Channel with Built-in Diode |