SM4036NHKP vs BSC0901NSATMA1 比較
詳細な並列比較: SM4036NHKP メーカー: Sinopower Semiconductor および BSC0901NSATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | SM4036NHKP | BSC0901NSATMA1 |
|---|---|---|
| ブランド | Sinopower Semiconductor | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.19 | $0.78 |
| トランジスタタイプ | N-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) | 80 A | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) in mOhm] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th)] |
| パッケージ | PDFN-8 (DFN5x6) 5x6 mm | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm |
| 実装タイプ | Surface Mount | Surface Mount |
| Marking Code | 4036NH | — |
| 動作温度範囲 | [DATA_NEEDED: junction temperature range] | -55C to +150C |
| Power Dissipation (PD) | [DATA_NEEDED: PD max] | — |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | — |
| Avalanche Rating | Yes (per datasheet) | — |
| MSLレベル | [DATA_NEEDED: MSL rating] | — |
| RoHS ステータス | Compliant (per Sinopower product page) | Compliant |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 30V |
| Technology | — | N-Channel Trench MOSFET (OptiMOS) |
| Drain-to-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Continuous Drain Current (ID) at Ta | — | 28 A |
| On-State Resistance RDS(on) Max at VGS=10V | — | 1.9 mOhm |
| On-State Resistance RDS(on) Typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical] |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy (EAS) | — | 80 mJ |
| Power Dissipation (PD) at Tc | — | 69 W |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| 湿気感度レベル（MSL） | — | 1 |
| Built-in Body Diode | — | Yes |
| Configuration | — | Single N-Channel with Built-in Diode |