SM4036NHKP vs BSC0901NSATMA1 Comparison
Detailed side-by-side comparison of SM4036NHKP by Sinopower Semiconductor and BSC0901NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Sinopower Semiconductor
SM4036NHKP - 40V 80A N-Channel MOSFET, PDFN-8 | Sinopower
SM4036NHKP ✓ Active
Specification Comparison
| Parameter | SM4036NHKP | BSC0901NSATMA1 |
|---|---|---|
| Brand | Sinopower Semiconductor | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.19 | $0.78 |
| Transistor Type | N-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) | 80 A | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) in mOhm] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th)] |
| Package | PDFN-8 (DFN5x6) 5x6 mm | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Marking Code | 4036NH | — |
| Operating Temperature Range | [DATA_NEEDED: junction temperature range] | -55C to +150C |
| Power Dissipation (PD) | [DATA_NEEDED: PD max] | — |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | — |
| Avalanche Rating | Yes (per datasheet) | — |
| MSL Level | [DATA_NEEDED: MSL rating] | — |
| RoHS Status | Compliant (per Sinopower product page) | Compliant |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 30V |
| Technology | — | N-Channel Trench MOSFET (OptiMOS) |
| Drain-to-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Continuous Drain Current (ID) at Ta | — | 28 A |
| On-State Resistance RDS(on) Max at VGS=10V | — | 1.9 mOhm |
| On-State Resistance RDS(on) Typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical] |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy (EAS) | — | 80 mJ |
| Power Dissipation (PD) at Tc | — | 69 W |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Moisture Sensitivity Level (MSL) | — | 1 |
| Built-in Body Diode | — | Yes |
| Configuration | — | Single N-Channel with Built-in Diode |