SM4036NHKP vs IRFH7084TRPBF Vergleich
Detaillierter Direktvergleich von SM4036NHKP von Sinopower Semiconductor und IRFH7084TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Sinopower Semiconductor
SM4036NHKP - 40V 80A N-Channel MOSFET, PDFN-8 | Sinopower
SM4036NHKP ✓ Aktiv
Spezifikationsvergleich
| Parameter | SM4036NHKP | IRFH7084TRPBF |
|---|---|---|
| Marke | Sinopower Semiconductor | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,19 | $0,45 |
| Transistortyp | N-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) | 80 A | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) in mOhm] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Gehäuse | PDFN-8 (DFN5x6) 5x6 mm | 8-PQFN 5x6 mm (SuperSO8) |
| Montageart | Surface Mount | Surface Mount |
| Marking Code | 4036NH | — |
| Betriebstemperaturbereich | [DATA_NEEDED: junction temperature range] | -55°C to +175°C (TJ) |
| Power Dissipation (PD) | [DATA_NEEDED: PD max] | — |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | — |
| Avalanche Rating | Yes (per datasheet) | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 |
| RoHS-Status | Compliant (per Sinopower product page) | Compliant |
| Lead-Free | Yes | — |
| FET Type | — | N-Channel |
| Technology | — | StrongIRFET™ (trench MOSFET) |
| Continuous Drain Current (ID, Tc=25°C, package-limited) | — | 100 A |
| Silicon-Limited Drain Current | — | 265 A |
| Power Dissipation (PD, Tc=25°C) | — | 156 W |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.25 mΩ |
| On-Resistance RDS(on) typ @ VGS=10V | — | 0.95 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage VGS(th) typ | — | 1.7 V to 2.7 V |
| Input Capacitance (Ciss) max @ 25V | — | 6560 pF |
| Halogenfrei | — | Compliant |
| RthJC max | — | 0.96 °C/W (per datasheet) |