SM4036NHKP vs IRFH7084TRPBF Comparaison
Comparaison détaillée côte à côte de SM4036NHKP par Sinopower Semiconductor et IRFH7084TRPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Sinopower Semiconductor
SM4036NHKP - 40V 80A N-Channel MOSFET, PDFN-8 | Sinopower
SM4036NHKP ✓ Actif
Comparaison des spécifications
| Paramètre | SM4036NHKP | IRFH7084TRPBF |
|---|---|---|
| Marque | Sinopower Semiconductor | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,19 | $0,45 |
| Type de transistor | N-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) | 80 A | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) in mOhm] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Boîtier | PDFN-8 (DFN5x6) 5x6 mm | 8-PQFN 5x6 mm (SuperSO8) |
| Type de montage | Surface Mount | Surface Mount |
| Marking Code | 4036NH | — |
| Plage de température de fonctionnement | [DATA_NEEDED: junction temperature range] | -55°C to +175°C (TJ) |
| Power Dissipation (PD) | [DATA_NEEDED: PD max] | — |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | — |
| Avalanche Rating | Yes (per datasheet) | — |
| Niveau MSL | [DATA_NEEDED: MSL rating] | 1 |
| Statut RoHS | Compliant (per Sinopower product page) | Compliant |
| Lead-Free | Yes | — |
| FET Type | — | N-Channel |
| Technology | — | StrongIRFET™ (trench MOSFET) |
| Continuous Drain Current (ID, Tc=25°C, package-limited) | — | 100 A |
| Silicon-Limited Drain Current | — | 265 A |
| Power Dissipation (PD, Tc=25°C) | — | 156 W |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.25 mΩ |
| On-Resistance RDS(on) typ @ VGS=10V | — | 0.95 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage VGS(th) typ | — | 1.7 V to 2.7 V |
| Input Capacitance (Ciss) max @ 25V | — | 6560 pF |
| Sans halogène | — | Compliant |
| RthJC max | — | 0.96 °C/W (per datasheet) |