SR2020CT vs MBR20200CT Vergleich
Detaillierter Direktvergleich von SR2020CT von Galaxy Semiconductor und MBR20200CT von Taiwan Semiconductor. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Galaxy Semiconductor
SR2020CT - 20A 20V Dual Schottky Rectifier | Galaxy Semiconductor
SR2020CT ✓ AktivTaiwan Semiconductor
MBR20200CT - 200V 20A Dual Schottky Rectifier | Taiwan Semiconductor
MBR20200CT ✓ AktivSpezifikationsvergleich
| Parameter | SR2020CT | MBR20200CT |
|---|---|---|
| Marke | Galaxy Semiconductor | Taiwan Semiconductor |
| Kategorie | Diodes | Diodes |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,32 | $0,24 |
| Device Type | Dual Schottky Barrier Rectifier (center-tap, common cathode) | — |
| Maximum Repetitive Reverse Voltage (VRRM) | 20 V | — |
| Maximum Average Forward Current (IF(AV)) | 20 A | — |
| Forward Current per Leg | 10 A (dual configuration, datasheet family 20 A total rating) | — |
| Reverse Voltage Family Range | 20 V to 60 V (SR2020CT through SR2060CT) | — |
| Forward Voltage (VF) | [DATA_NEEDED: Forward Voltage VF] | [DATA_NEEDED: Forward Voltage at rated current] |
| Peak Non-Repetitive Surge Current (IFSM) | [DATA_NEEDED: IFSM] | — |
| Reverse Recovery Time (trr) | Negligible (majority carrier Schottky conduction) | — |
| Technology | Metal-semiconductor junction, epitaxial construction with guard ring | Schottky barrier with platinum barrier metal, epitaxial construction, oxide passivation |
| Gehäuse | TO-220AB | TO-220AB (TO-220-3, 3-pin + tab), Through Hole |
| Flammability Classification | UL 94V-0 | — |
| Montageart | Through-hole, tab for heatsink mounting | Through Hole |
| Betriebstemperatur | [DATA_NEEDED: Operating Junction Temperature Range] | — |
| Configuration | Common cathode dual diode | — |
| Typical Applications | Low-voltage high-frequency inverters, SMPS output rectification | — |
| RoHS-Status | [DATA_NEEDED: RoHS compliance statement] | Compliant (Pb-free device) |
| Topologie | — | Diode Array, 1 Pair, Common Cathode |
| Diode Type | — | Schottky Barrier Rectifier |
| Repetitive Peak Reverse Voltage (VRRM) | — | 200 V |
| Average Rectified Forward Current (IF(AV)) | — | 10 A per leg, 20 A per package (TC = 161 C) |
| Peak Repetitive Forward Current (IFRM) | — | 20 A per leg (square wave, 20 kHz, TC = 158 C) |
| Non-Repetitive Peak Surge Current (IFSM) | — | 150 A |
| Peak Repetitive Reverse Current (IRRM) | — | 1.0 A (2.0 us, 1.0 kHz) |
| Maximum Junction Temperature (TJ) | — | 175 C |
| Storage Temperature Range (Tstg) | — | -65 C to +175 C |
| Intended Applications | — | SMPS and converters with outputs up to 48 V |
| Lead Finish | — | Pb-free, corrosion resistant, readily solderable |
| Molding Compound | — | UL 94V-0 flammability rated |
| Package Outline Standard | — | JEDEC TO-220AB |