SR2020CT vs MBR20200CT So sánh
So sánh chi tiết song song của SR2020CT bằng Galaxy Semiconductor và MBR20200CT bằng Taiwan Semiconductor. So sánh các thông số quan trọng, thông số điện tử, gói gọn, trạng thái vòng đời, giá cả và khả năng cung cấp để xác định linh kiện tốt nhất cho yêu cầu thiết kế của bạn.
Galaxy Semiconductor
SR2020CT - 20A 20V Dual Schottky Rectifier | Galaxy Semiconductor
SR2020CT ✓ Hoạt độngTaiwan Semiconductor
MBR20200CT - 200V 20A Dual Schottky Rectifier | Taiwan Semiconductor
MBR20200CT ✓ Hoạt độngSo sánh thông số kỹ thuật
| Tham số | SR2020CT | MBR20200CT |
|---|---|---|
| Thương hiệu | Galaxy Semiconductor | Taiwan Semiconductor |
| Danh mục | Diodes | Diodes |
| Trạng thái vòng đời | Hoạt động | Hoạt động |
| Device Type | Dual Schottky Barrier Rectifier (center-tap, common cathode) | — |
| Maximum Repetitive Reverse Voltage (VRRM) | 20 V | — |
| Maximum Average Forward Current (IF(AV)) | 20 A | — |
| Forward Current per Leg | 10 A (dual configuration, datasheet family 20 A total rating) | — |
| Reverse Voltage Family Range | 20 V to 60 V (SR2020CT through SR2060CT) | — |
| Forward Voltage (VF) | [DATA_NEEDED: Forward Voltage VF] | [DATA_NEEDED: Forward Voltage at rated current] |
| Peak Non-Repetitive Surge Current (IFSM) | [DATA_NEEDED: IFSM] | — |
| Reverse Recovery Time (trr) | Negligible (majority carrier Schottky conduction) | — |
| Technology | Metal-semiconductor junction, epitaxial construction with guard ring | Schottky barrier with platinum barrier metal, epitaxial construction, oxide passivation |
| Hộp | TO-220AB | TO-220AB (TO-220-3, 3-pin + tab), Through Hole |
| Flammability Classification | UL 94V-0 | — |
| Kiểu lắp đặt | Through-hole, tab for heatsink mounting | Through Hole |
| Nhiệt độ hoạt động | [DATA_NEEDED: Operating Junction Temperature Range] | — |
| Configuration | Common cathode dual diode | — |
| Typical Applications | Low-voltage high-frequency inverters, SMPS output rectification | — |
| Trạng thái RoHS | [DATA_NEEDED: RoHS compliance statement] | Compliant (Pb-free device) |
| Cấu trúc | — | Diode Array, 1 Pair, Common Cathode |
| Diode Type | — | Schottky Barrier Rectifier |
| Repetitive Peak Reverse Voltage (VRRM) | — | 200 V |
| Average Rectified Forward Current (IF(AV)) | — | 10 A per leg, 20 A per package (TC = 161 C) |
| Peak Repetitive Forward Current (IFRM) | — | 20 A per leg (square wave, 20 kHz, TC = 158 C) |
| Non-Repetitive Peak Surge Current (IFSM) | — | 150 A |
| Peak Repetitive Reverse Current (IRRM) | — | 1.0 A (2.0 us, 1.0 kHz) |
| Maximum Junction Temperature (TJ) | — | 175 C |
| Storage Temperature Range (Tstg) | — | -65 C to +175 C |
| Intended Applications | — | SMPS and converters with outputs up to 48 V |
| Lead Finish | — | Pb-free, corrosion resistant, readily solderable |
| Molding Compound | — | UL 94V-0 flammability rated |
| Package Outline Standard | — | JEDEC TO-220AB |