SR2020CT vs MBR20200CT Comparación
Comparación detallada lado a lado de SR2020CT por Galaxy Semiconductor y MBR20200CT por Taiwan Semiconductor. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Galaxy Semiconductor
SR2020CT - 20A 20V Dual Schottky Rectifier | Galaxy Semiconductor
SR2020CT ✓ ActivoTaiwan Semiconductor
MBR20200CT - 200V 20A Dual Schottky Rectifier | Taiwan Semiconductor
MBR20200CT ✓ ActivoComparación de especificaciones
| Parámetro | SR2020CT | MBR20200CT |
|---|---|---|
| Marca | Galaxy Semiconductor | Taiwan Semiconductor |
| Categoría | Diodes | Diodes |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,32 | $0,24 |
| Device Type | Dual Schottky Barrier Rectifier (center-tap, common cathode) | — |
| Maximum Repetitive Reverse Voltage (VRRM) | 20 V | — |
| Maximum Average Forward Current (IF(AV)) | 20 A | — |
| Forward Current per Leg | 10 A (dual configuration, datasheet family 20 A total rating) | — |
| Reverse Voltage Family Range | 20 V to 60 V (SR2020CT through SR2060CT) | — |
| Forward Voltage (VF) | [DATA_NEEDED: Forward Voltage VF] | [DATA_NEEDED: Forward Voltage at rated current] |
| Peak Non-Repetitive Surge Current (IFSM) | [DATA_NEEDED: IFSM] | — |
| Reverse Recovery Time (trr) | Negligible (majority carrier Schottky conduction) | — |
| Technology | Metal-semiconductor junction, epitaxial construction with guard ring | Schottky barrier with platinum barrier metal, epitaxial construction, oxide passivation |
| Encapsulado | TO-220AB | TO-220AB (TO-220-3, 3-pin + tab), Through Hole |
| Flammability Classification | UL 94V-0 | — |
| Tipo de montaje | Through-hole, tab for heatsink mounting | Through Hole |
| Temperatura de funcionamiento | [DATA_NEEDED: Operating Junction Temperature Range] | — |
| Configuration | Common cathode dual diode | — |
| Typical Applications | Low-voltage high-frequency inverters, SMPS output rectification | — |
| Estado RoHS | [DATA_NEEDED: RoHS compliance statement] | Compliant (Pb-free device) |
| Topología | — | Diode Array, 1 Pair, Common Cathode |
| Diode Type | — | Schottky Barrier Rectifier |
| Repetitive Peak Reverse Voltage (VRRM) | — | 200 V |
| Average Rectified Forward Current (IF(AV)) | — | 10 A per leg, 20 A per package (TC = 161 C) |
| Peak Repetitive Forward Current (IFRM) | — | 20 A per leg (square wave, 20 kHz, TC = 158 C) |
| Non-Repetitive Peak Surge Current (IFSM) | — | 150 A |
| Peak Repetitive Reverse Current (IRRM) | — | 1.0 A (2.0 us, 1.0 kHz) |
| Maximum Junction Temperature (TJ) | — | 175 C |
| Storage Temperature Range (Tstg) | — | -65 C to +175 C |
| Intended Applications | — | SMPS and converters with outputs up to 48 V |
| Lead Finish | — | Pb-free, corrosion resistant, readily solderable |
| Molding Compound | — | UL 94V-0 flammability rated |
| Package Outline Standard | — | JEDEC TO-220AB |