SRF7S27125HSR3 vs MRF6V2150NBR5 Vergleich
Detaillierter Direktvergleich von SRF7S27125HSR3 von NXP Semiconductors und MRF6V2150NBR5 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
SRF7S27125HSR3 - 125W RF Power LDMOSFET, 27V | NXP Semiconductors
SRF7S27125HSR3 ✓ Aktiv
Spezifikationsvergleich
| Parameter | SRF7S27125HSR3 | MRF6V2150NBR5 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $99,80 | $54,20 |
| Product Type | RF Power LDMOSFET | — |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Drain-Source Voltage (VDS) | 27 V (typical operating) | 110 V |
| Output Power (CW) | 125 W | — |
| Frequency Band | UHF (470 MHz to 860 MHz typical) | — |
| Technology | LDMOS (Laterally Diffused MOSFET) | — |
| Gehäuse | NI-880S ceramic flange-mount | TO-272 WB-4 (TO-272W, 5-pin, ceramic, bolt-down) |
| Montageart | Flange-mount, bolt-down (2 tabs) | Chassis/Surface Mount (bolt-down with ceramic insulator) |
| Polarity | N-Channel | — |
| Mode of Operation | CW (continuous wave) capable | CW (continuous wave), large-signal |
| Application Domain | UHF broadcast transmitter PA, industrial RF | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | — |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Wärmewiderstand | [DATA_NEEDED: RthJC value] | — |
| Lead-Free / RoHS | [DATA_NEEDED: RoHS compliance status] | — |
| Input Matching | Internal, broadband | — |
| ESD Protection | Integrated | — |
| Gain (typical) | [DATA_NEEDED: gain at operating frequency] | — |
| Drain Efficiency | [DATA_NEEDED: typical drain efficiency] | — |
| Transistortyp | — | N-Channel Enhancement-Mode Lateral RF Power MOSFET |
| Drain-Source Voltage (VDSS, max) | — | 110 V |
| Operating Drain Voltage (VDD) | — | 50 V |
| Continuous Drain Current (ID) | — | [DATA_NEEDED: ID max] |
| Output Power (POUT, CW) | — | 150 W |
| Operating Frequency Range | — | 10 MHz to 450 MHz |
| Power Gain (Gps) | — | 25 dB |
| Drain Efficiency (typ) | — | [DATA_NEEDED: drain efficiency %] |
| Configuration | — | Single-ended, unmatched |
| MSL-Level | — | Not applicable (hermetic ceramic package) |
| RoHS-Status | — | [DATA_NEEDED: RoHS status] |
| Betriebstemperaturbereich | — | -40 C to +150 C (TJ max 200 C) |
| Lead-Free | — | [DATA_NEEDED: lead-free status] |