SRF7S27125HSR3 vs MRF6V2150NBR5 Comparaison
Comparaison détaillée côte à côte de SRF7S27125HSR3 par NXP Semiconductors et MRF6V2150NBR5 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
SRF7S27125HSR3 - 125W RF Power LDMOSFET, 27V | NXP Semiconductors
SRF7S27125HSR3 ✓ Actif
Comparaison des spécifications
| Paramètre | SRF7S27125HSR3 | MRF6V2150NBR5 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $99,80 | $54,20 |
| Product Type | RF Power LDMOSFET | — |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Drain-Source Voltage (VDS) | 27 V (typical operating) | 110 V |
| Output Power (CW) | 125 W | — |
| Frequency Band | UHF (470 MHz to 860 MHz typical) | — |
| Technology | LDMOS (Laterally Diffused MOSFET) | — |
| Boîtier | NI-880S ceramic flange-mount | TO-272 WB-4 (TO-272W, 5-pin, ceramic, bolt-down) |
| Type de montage | Flange-mount, bolt-down (2 tabs) | Chassis/Surface Mount (bolt-down with ceramic insulator) |
| Polarity | N-Channel | — |
| Mode of Operation | CW (continuous wave) capable | CW (continuous wave), large-signal |
| Application Domain | UHF broadcast transmitter PA, industrial RF | — |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | — |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Résistance thermique | [DATA_NEEDED: RthJC value] | — |
| Lead-Free / RoHS | [DATA_NEEDED: RoHS compliance status] | — |
| Input Matching | Internal, broadband | — |
| ESD Protection | Integrated | — |
| Gain (typical) | [DATA_NEEDED: gain at operating frequency] | — |
| Drain Efficiency | [DATA_NEEDED: typical drain efficiency] | — |
| Type de transistor | — | N-Channel Enhancement-Mode Lateral RF Power MOSFET |
| Drain-Source Voltage (VDSS, max) | — | 110 V |
| Operating Drain Voltage (VDD) | — | 50 V |
| Continuous Drain Current (ID) | — | [DATA_NEEDED: ID max] |
| Output Power (POUT, CW) | — | 150 W |
| Operating Frequency Range | — | 10 MHz to 450 MHz |
| Power Gain (Gps) | — | 25 dB |
| Drain Efficiency (typ) | — | [DATA_NEEDED: drain efficiency %] |
| Configuration | — | Single-ended, unmatched |
| Niveau MSL | — | Not applicable (hermetic ceramic package) |
| Statut RoHS | — | [DATA_NEEDED: RoHS status] |
| Plage de température de fonctionnement | — | -40 C to +150 C (TJ max 200 C) |
| Lead-Free | — | [DATA_NEEDED: lead-free status] |