SRF7S27125HSR3 vs MRF6V2150NBR5 Comparación
Comparación detallada lado a lado de SRF7S27125HSR3 por NXP Semiconductors y MRF6V2150NBR5 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
SRF7S27125HSR3 - 125W RF Power LDMOSFET, 27V | NXP Semiconductors
SRF7S27125HSR3 ✓ Activo
Comparación de especificaciones
| Parámetro | SRF7S27125HSR3 | MRF6V2150NBR5 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $99,80 | $54,20 |
| Product Type | RF Power LDMOSFET | — |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Drain-Source Voltage (VDS) | 27 V (typical operating) | 110 V |
| Output Power (CW) | 125 W | — |
| Frequency Band | UHF (470 MHz to 860 MHz typical) | — |
| Technology | LDMOS (Laterally Diffused MOSFET) | — |
| Encapsulado | NI-880S ceramic flange-mount | TO-272 WB-4 (TO-272W, 5-pin, ceramic, bolt-down) |
| Tipo de montaje | Flange-mount, bolt-down (2 tabs) | Chassis/Surface Mount (bolt-down with ceramic insulator) |
| Polarity | N-Channel | — |
| Mode of Operation | CW (continuous wave) capable | CW (continuous wave), large-signal |
| Application Domain | UHF broadcast transmitter PA, industrial RF | — |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | — |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Resistencia térmica | [DATA_NEEDED: RthJC value] | — |
| Lead-Free / RoHS | [DATA_NEEDED: RoHS compliance status] | — |
| Input Matching | Internal, broadband | — |
| ESD Protection | Integrated | — |
| Gain (typical) | [DATA_NEEDED: gain at operating frequency] | — |
| Drain Efficiency | [DATA_NEEDED: typical drain efficiency] | — |
| Tipo de transistor | — | N-Channel Enhancement-Mode Lateral RF Power MOSFET |
| Drain-Source Voltage (VDSS, max) | — | 110 V |
| Operating Drain Voltage (VDD) | — | 50 V |
| Continuous Drain Current (ID) | — | [DATA_NEEDED: ID max] |
| Output Power (POUT, CW) | — | 150 W |
| Operating Frequency Range | — | 10 MHz to 450 MHz |
| Power Gain (Gps) | — | 25 dB |
| Drain Efficiency (typ) | — | [DATA_NEEDED: drain efficiency %] |
| Configuration | — | Single-ended, unmatched |
| Nivel MSL | — | Not applicable (hermetic ceramic package) |
| Estado RoHS | — | [DATA_NEEDED: RoHS status] |
| Rango de temperatura de funcionamiento | — | -40 C to +150 C (TJ max 200 C) |
| Lead-Free | — | [DATA_NEEDED: lead-free status] |