SRF8S9260HSR3 vs MRF8S9220HSR3 Vergleich

Detaillierter Direktvergleich von SRF8S9260HSR3 von NXP Semiconductors und MRF8S9220HSR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
SRF8S9260HSR3 SRF8S9260HSR3 - 75W 920-960MHz RF Power MOSFET | NXP

SRF8S9260HSR3 - 75W 920-960MHz RF Power MOSFET | NXP

SRF8S9260HSR3 ✓ Aktiv
NXP Semiconductors
MRF8S9220HSR3 MRF8S9220HSR3 - 65W 920-960MHz W-CDMA RF Power LDMOS | NXP

MRF8S9220HSR3 - 65W 920-960MHz W-CDMA RF Power LDMOS | NXP

MRF8S9220HSR3 ✓ Aktiv

Spezifikationsvergleich

Parameter SRF8S9260HSR3 MRF8S9220HSR3
Marke NXP Semiconductors NXP Semiconductors
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $92,50 $96,80
Manufacturer NXP Semiconductors (Freescale legacy) —
Part Family MRF8S9260 / SRF8S9260 HV8 series —
Transistortyp N-Channel Enhancement-Mode Lateral MOSFET —
Application Band 920-960 MHz (usable 865-960 MHz) —
Output Power (Avg) 75 W (W-CDMA, 28 V) —
Drain-Source Voltage (VDS) 28 V —
Quiescent Drain Current (IDQ) 1.7 A typical —
Power Gain (Gps) 18.6 dB at 960 MHz —
Drain Efficiency [DATA_NEEDED: drain efficiency %] —
Gehäuse NI-880S (ceramic, flanged) —
Montageart Screw-mount, flange Surface Mount / Flange Mount
Operating Mode Class AB or Class C —
Modulation Targets CDMA, W-CDMA, multicarrier GSM —
RoHS-Status Compliant —
Lead-Free Yes —
Technology — LDMOS (Laterally Diffused MOSFET), N-Channel Enhancement-Mode
Frequency Range — 920 MHz to 960 MHz
Output Power (Avg, W-CDMA) — 65 W
Operating Drain Voltage (VDD) — 28 V (typical)
Drain-Source Voltage Rating (VDS max) — 70 V
Power Gain (typ) — 19.4 dB
Test Drain Current — 1.6 A
Drain Efficiency (typ) — [DATA_NEEDED: drain efficiency %]
Gehäuse / Bauform — NI-780S (Case 465-06, Style 1), ceramic
Package Dimensions (L x W x H) — 20.7 mm x 9.91 mm x 4.32 mm
Configuration — Single-ended, 1-carrier W-CDMA
Betriebs-Sperrschichttemperatur — -65 C to +225 C
Lead-Free / RoHS — Lead Free (per DigChip listing)
Modulation Support — W-CDMA, CDMA, LTE (Class AB / Class C)

Datenblätter & Ressourcen

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