SRF8S9260HSR3 vs MRF8S9220HSR3 对比
详细并排对比 SRF8S9260HSR3 出自 NXP Semiconductors 和 MRF8S9220HSR3 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | SRF8S9260HSR3 | MRF8S9220HSR3 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $92.50 | $96.80 |
| Manufacturer | NXP Semiconductors (Freescale legacy) | — |
| Part Family | MRF8S9260 / SRF8S9260 HV8 series | — |
| 晶体管类型 | N-Channel Enhancement-Mode Lateral MOSFET | — |
| Application Band | 920-960 MHz (usable 865-960 MHz) | — |
| Output Power (Avg) | 75 W (W-CDMA, 28 V) | — |
| Drain-Source Voltage (VDS) | 28 V | — |
| Quiescent Drain Current (IDQ) | 1.7 A typical | — |
| Power Gain (Gps) | 18.6 dB at 960 MHz | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency %] | — |
| 封装 | NI-880S (ceramic, flanged) | — |
| 安装类型 | Screw-mount, flange | Surface Mount / Flange Mount |
| Operating Mode | Class AB or Class C | — |
| Modulation Targets | CDMA, W-CDMA, multicarrier GSM | — |
| RoHS 状态 | Compliant | — |
| Lead-Free | Yes | — |
| Technology | — | LDMOS (Laterally Diffused MOSFET), N-Channel Enhancement-Mode |
| Frequency Range | — | 920 MHz to 960 MHz |
| Output Power (Avg, W-CDMA) | — | 65 W |
| Operating Drain Voltage (VDD) | — | 28 V (typical) |
| Drain-Source Voltage Rating (VDS max) | — | 70 V |
| Power Gain (typ) | — | 19.4 dB |
| Test Drain Current | — | 1.6 A |
| Drain Efficiency (typ) | — | [DATA_NEEDED: drain efficiency %] |
| 封装 / 外壳 | — | NI-780S (Case 465-06, Style 1), ceramic |
| Package Dimensions (L x W x H) | — | 20.7 mm x 9.91 mm x 4.32 mm |
| Configuration | — | Single-ended, 1-carrier W-CDMA |
| 工作结温 | — | -65 C to +225 C |
| Lead-Free / RoHS | — | Lead Free (per DigChip listing) |
| Modulation Support | — | W-CDMA, CDMA, LTE (Class AB / Class C) |