SRF8S9260HSR3 vs MRF8S9220HSR3 Comparaison
Comparaison détaillée côte à côte de SRF8S9260HSR3 par NXP Semiconductors et MRF8S9220HSR3 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | SRF8S9260HSR3 | MRF8S9220HSR3 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $92,50 | $96,80 |
| Manufacturer | NXP Semiconductors (Freescale legacy) | — |
| Part Family | MRF8S9260 / SRF8S9260 HV8 series | — |
| Type de transistor | N-Channel Enhancement-Mode Lateral MOSFET | — |
| Application Band | 920-960 MHz (usable 865-960 MHz) | — |
| Output Power (Avg) | 75 W (W-CDMA, 28 V) | — |
| Drain-Source Voltage (VDS) | 28 V | — |
| Quiescent Drain Current (IDQ) | 1.7 A typical | — |
| Power Gain (Gps) | 18.6 dB at 960 MHz | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency %] | — |
| Boîtier | NI-880S (ceramic, flanged) | — |
| Type de montage | Screw-mount, flange | Surface Mount / Flange Mount |
| Operating Mode | Class AB or Class C | — |
| Modulation Targets | CDMA, W-CDMA, multicarrier GSM | — |
| Statut RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Technology | — | LDMOS (Laterally Diffused MOSFET), N-Channel Enhancement-Mode |
| Frequency Range | — | 920 MHz to 960 MHz |
| Output Power (Avg, W-CDMA) | — | 65 W |
| Operating Drain Voltage (VDD) | — | 28 V (typical) |
| Drain-Source Voltage Rating (VDS max) | — | 70 V |
| Power Gain (typ) | — | 19.4 dB |
| Test Drain Current | — | 1.6 A |
| Drain Efficiency (typ) | — | [DATA_NEEDED: drain efficiency %] |
| Boîtier / Format | — | NI-780S (Case 465-06, Style 1), ceramic |
| Package Dimensions (L x W x H) | — | 20.7 mm x 9.91 mm x 4.32 mm |
| Configuration | — | Single-ended, 1-carrier W-CDMA |
| Température de jonction en fonctionnement | — | -65 C to +225 C |
| Lead-Free / RoHS | — | Lead Free (per DigChip listing) |
| Modulation Support | — | W-CDMA, CDMA, LTE (Class AB / Class C) |