SRVBS260NT3G vs SS0530_R1_00001 Vergleich
Detaillierter Direktvergleich von SRVBS260NT3G von onsemi und SS0530_R1_00001 von Panjit. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | SRVBS260NT3G | SS0530_R1_00001 |
|---|---|---|
| Marke | onsemi | Panjit |
| Kategorie | Diodes | Diodes |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,11 | $0,04 |
| Manufacturer | onsemi | Panjit International Inc. |
| Product Type | Schottky Power Rectifier (single diode) | — |
| Gehäuse | SMB (surface mount, C-bend leads) | SOD-123 |
| Montageart | Surface Mount | Surface Mount |
| Reverse Test Voltage (VRRM) | 60 V | — |
| Maximum Average Forward Current (IF(AV)) | 2 A | — |
| Maximum Forward Voltage (VF) | 0.63 V at 2 A | — |
| Betriebstemperaturbereich | -55 C to +125 C | [DATA_NEEDED: operating temperature range] |
| Peak Reflow Temperature | 260 C | — |
| Terminal Form | C BEND | — |
| Terminal Position | DUAL | — |
| Number of Terminals | 2 | — |
| Package Shape | RECTANGULAR | — |
| Terminal Finish | Matte Tin | — |
| RoHS-Status | Compliant | Compliant |
| Diode Technology | Schottky Barrier (epitaxial construction, oxide passivation, metal overlay contact) | — |
| Diode Type | — | Schottky Barrier Diode (SBD) |
| Configuration | — | Single, 1 Phase, 1 Element |
| Reverse Voltage (VRRM) | — | 30 V |
| Average Rectified Forward Current (IF(AV)) | — | 500 mA |
| Forward Voltage Drop (VF) | — | 430 mV @ 500 mA |
| Pin-Anzahl | — | 2 |
| Forward Surge Current (IFSM) | — | [DATA_NEEDED: IFSM] |
| Reverse Leakage Current (IR) | — | [DATA_NEEDED: IR at rated VR] |
| Reverse Recovery Time (trr) | — | [DATA_NEEDED: trr] |
| Packaging | — | Tape & Reel |
| Technology | — | Schottky (metal-semiconductor junction) |