SRVBS260NT3G vs SS0530_R1_00001 Comparación
Comparación detallada lado a lado de SRVBS260NT3G por onsemi y SS0530_R1_00001 por Panjit. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | SRVBS260NT3G | SS0530_R1_00001 |
|---|---|---|
| Marca | onsemi | Panjit |
| Categoría | Diodes | Diodes |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,11 | $0,04 |
| Manufacturer | onsemi | Panjit International Inc. |
| Product Type | Schottky Power Rectifier (single diode) | — |
| Encapsulado | SMB (surface mount, C-bend leads) | SOD-123 |
| Tipo de montaje | Surface Mount | Surface Mount |
| Reverse Test Voltage (VRRM) | 60 V | — |
| Maximum Average Forward Current (IF(AV)) | 2 A | — |
| Maximum Forward Voltage (VF) | 0.63 V at 2 A | — |
| Rango de temperatura de funcionamiento | -55 C to +125 C | [DATA_NEEDED: operating temperature range] |
| Peak Reflow Temperature | 260 C | — |
| Terminal Form | C BEND | — |
| Terminal Position | DUAL | — |
| Number of Terminals | 2 | — |
| Package Shape | RECTANGULAR | — |
| Terminal Finish | Matte Tin | — |
| Estado RoHS | Compliant | Compliant |
| Diode Technology | Schottky Barrier (epitaxial construction, oxide passivation, metal overlay contact) | — |
| Diode Type | — | Schottky Barrier Diode (SBD) |
| Configuration | — | Single, 1 Phase, 1 Element |
| Reverse Voltage (VRRM) | — | 30 V |
| Average Rectified Forward Current (IF(AV)) | — | 500 mA |
| Forward Voltage Drop (VF) | — | 430 mV @ 500 mA |
| Recuento de pines | — | 2 |
| Forward Surge Current (IFSM) | — | [DATA_NEEDED: IFSM] |
| Reverse Leakage Current (IR) | — | [DATA_NEEDED: IR at rated VR] |
| Reverse Recovery Time (trr) | — | [DATA_NEEDED: trr] |
| Packaging | — | Tape & Reel |
| Technology | — | Schottky (metal-semiconductor junction) |