STS4DNF60L vs STS5DNF60L Vergleich
Detaillierter Direktvergleich von STS4DNF60L von STMicroelectronics und STS5DNF60L von STMicroelectronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
STMicroelectronics
STS5DNF60L - Dual N-Ch 60V 5A 35mΩ STripFET II MOSFET | STMicroelectronics
STS5DNF60L ✓ AktivSpezifikationsvergleich
| Parameter | STS4DNF60L | STS5DNF60L |
|---|---|---|
| Marke | STMicroelectronics | STMicroelectronics |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,54 | $0,48 |
| Transistortyp | Dual N-Channel MOSFET Array | — |
| Drain-Source Voltage (V_DS) | 60 V | — |
| Continuous Drain Current (I_D) | 4 A per channel | — |
| On-Resistance R_DS(on) (typ) | 0.045 Ω at V_GS = 10 V | — |
| On-Resistance R_DS(on) (max) | < 0.055 Ω | 45 mΩ at V_GS = 10 V, I_D = 2 A |
| Total Power Dissipation (P_tot) | 2 W | — |
| Gate-Source Threshold Voltage | [DATA_NEEDED: V_GS(th) minimum/typical/maximum] | — |
| Gate Drive | Low threshold drive (logic-level compatible) | — |
| Gehäuse | SO-8 (8-pin, surface mount) | SO-8 (8-SOIC, surface mount) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55 °C to +175 °C (junction) | [DATA_NEEDED: operating temperature min/max] |
| Technology | STripFET (strip-based, 2nd generation) | STripFET II trench N-channel |
| Number of Channels | 2 (dual N-channel on one die) | — |
| MSL-Level | 1 per JEDEC J-STD-020 | [DATA_NEEDED: MSL rating] |
| RoHS-Status | Compliant | — |
| Lead-Free | Yes | — |
| Manufacturing Process | STripFET "Single Feature Size" strip-based process | — |
| Drain-to-Source Voltage (V_DSS) | — | 60 V |
| Continuous Drain Current (I_D) at 25 °C | — | 5 A per channel |
| On-Resistance R_DS(on) (typ.) | — | 35 mΩ at V_GS = 10 V |
| Gate Threshold Voltage V_GS(th) | — | [DATA_NEEDED: V_GS(th) value] |
| Gate Charge Q_g | — | [DATA_NEEDED: Q_g total gate charge value] |
| Configuration | — | Dual independent N-channel |
| Power Dissipation P_D (per datasheet) | — | 2 W |
| Automotive Grade | — | Automotive-grade qualified |
| RoHS Compliance | — | Compliant |
| Avalanche Rating | — | 100% avalanche tested |