STS4DNF60L vs STS5DNF60L Comparación
Comparación detallada lado a lado de STS4DNF60L por STMicroelectronics y STS5DNF60L por STMicroelectronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
STMicroelectronics
STS5DNF60L - Dual N-Ch 60V 5A 35mΩ STripFET II MOSFET | STMicroelectronics
STS5DNF60L ✓ ActivoComparación de especificaciones
| Parámetro | STS4DNF60L | STS5DNF60L |
|---|---|---|
| Marca | STMicroelectronics | STMicroelectronics |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,54 | $0,48 |
| Tipo de transistor | Dual N-Channel MOSFET Array | — |
| Drain-Source Voltage (V_DS) | 60 V | — |
| Continuous Drain Current (I_D) | 4 A per channel | — |
| On-Resistance R_DS(on) (typ) | 0.045 Ω at V_GS = 10 V | — |
| On-Resistance R_DS(on) (max) | < 0.055 Ω | 45 mΩ at V_GS = 10 V, I_D = 2 A |
| Total Power Dissipation (P_tot) | 2 W | — |
| Gate-Source Threshold Voltage | [DATA_NEEDED: V_GS(th) minimum/typical/maximum] | — |
| Gate Drive | Low threshold drive (logic-level compatible) | — |
| Encapsulado | SO-8 (8-pin, surface mount) | SO-8 (8-SOIC, surface mount) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55 °C to +175 °C (junction) | [DATA_NEEDED: operating temperature min/max] |
| Technology | STripFET (strip-based, 2nd generation) | STripFET II trench N-channel |
| Number of Channels | 2 (dual N-channel on one die) | — |
| Nivel MSL | 1 per JEDEC J-STD-020 | [DATA_NEEDED: MSL rating] |
| Estado RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Manufacturing Process | STripFET "Single Feature Size" strip-based process | — |
| Drain-to-Source Voltage (V_DSS) | — | 60 V |
| Continuous Drain Current (I_D) at 25 °C | — | 5 A per channel |
| On-Resistance R_DS(on) (typ.) | — | 35 mΩ at V_GS = 10 V |
| Gate Threshold Voltage V_GS(th) | — | [DATA_NEEDED: V_GS(th) value] |
| Gate Charge Q_g | — | [DATA_NEEDED: Q_g total gate charge value] |
| Configuration | — | Dual independent N-channel |
| Power Dissipation P_D (per datasheet) | — | 2 W |
| Automotive Grade | — | Automotive-grade qualified |
| RoHS Compliance | — | Compliant |
| Avalanche Rating | — | 100% avalanche tested |