STS4DNF60L vs STS5DNF60L 비교

다음의 상세 나란히 비교: STS4DNF60L 제조: STMicroelectronics 및 STS5DNF60L 제조: STMicroelectronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

STMicroelectronics
STS4DNF60L STS4DNF60L - Dual N-Ch 60V 4A 0.045Ω SO-8 MOSFET | ST

STS4DNF60L - Dual N-Ch 60V 4A 0.045Ω SO-8 MOSFET | ST

STS4DNF60L ✓ 활성

사양 비교

파라미터 STS4DNF60L STS5DNF60L
브랜드 STMicroelectronics STMicroelectronics
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.54 $0.48
트랜지스터 유형 Dual N-Channel MOSFET Array —
Drain-Source Voltage (V_DS) 60 V —
Continuous Drain Current (I_D) 4 A per channel —
On-Resistance R_DS(on) (typ) 0.045 Ω at V_GS = 10 V —
On-Resistance R_DS(on) (max) < 0.055 Ω 45 mΩ at V_GS = 10 V, I_D = 2 A
Total Power Dissipation (P_tot) 2 W —
Gate-Source Threshold Voltage [DATA_NEEDED: V_GS(th) minimum/typical/maximum] —
Gate Drive Low threshold drive (logic-level compatible) —
패키지 SO-8 (8-pin, surface mount) SO-8 (8-SOIC, surface mount)
실장 유형 Surface Mount Surface Mount
동작 온도 범위 -55 °C to +175 °C (junction) [DATA_NEEDED: operating temperature min/max]
Technology STripFET (strip-based, 2nd generation) STripFET II trench N-channel
Number of Channels 2 (dual N-channel on one die) —
MSL 레벨 1 per JEDEC J-STD-020 [DATA_NEEDED: MSL rating]
RoHS 상태 Compliant —
Lead-Free Yes —
Manufacturing Process STripFET "Single Feature Size" strip-based process —
Drain-to-Source Voltage (V_DSS) — 60 V
Continuous Drain Current (I_D) at 25 °C — 5 A per channel
On-Resistance R_DS(on) (typ.) — 35 mΩ at V_GS = 10 V
Gate Threshold Voltage V_GS(th) — [DATA_NEEDED: V_GS(th) value]
Gate Charge Q_g — [DATA_NEEDED: Q_g total gate charge value]
Configuration — Dual independent N-channel
Power Dissipation P_D (per datasheet) — 2 W
Automotive Grade — Automotive-grade qualified
RoHS Compliance — Compliant
Avalanche Rating — 100% avalanche tested

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