TPD1E10B09DPYR vs TPD1E10B06DPYR Vergleich

Detaillierter Direktvergleich von TPD1E10B09DPYR von Texas Instruments und TPD1E10B06DPYR von Texas Instruments. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Texas Instruments
TPD1E10B09DPYR TPD1E10B09DPYR - 10pF, ±9V, ±20kV ESD Protection TVS in 0402 | TI

TPD1E10B09DPYR - 10pF, ±9V, ±20kV ESD Protection TVS in 0402 | TI

TPD1E10B09DPYR ✓ Aktiv
Texas Instruments
TPD1E10B06DPYR TPD1E10B06DPYR - Single-Channel ESD TVS Diode, ±30kV | TI

TPD1E10B06DPYR - Single-Channel ESD TVS Diode, ±30kV | TI

TPD1E10B06DPYR ✓ Aktiv

Spezifikationsvergleich

Parameter TPD1E10B09DPYR TPD1E10B06DPYR
Marke Texas Instruments Texas Instruments
Kategorie Surge Protectors Surge Protectors
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,06 $0,15
Product Type Single-channel ESD protection TVS diode —
Gehäuse X1SON/0402 (DPY), 1.0 x 0.6 mm X1SON / 2-X1SON (DPY), 1.0 x 0.6 mm
Pin-Anzahl 2 —
Montageart Surface Mount Surface Mount
Working Voltage (VRWM) ±9 V —
Breakdown Voltage (VBR) ±6 V minimum (DC) —
Clamping Voltage 20 V at 4.5 A (8/20 µs) —
Peak Pulse Current 4.5 A (8/20 µs) —
Surge Rating 6 A (8/20 µs) —
Line Capacitance 10 pF (typical) 12 pF (typical)
Dynamic Resistance (RDYN) 0.37 Ω —
Leakage Current 0.5 µA maximum Ultra-low (nA range per datasheet)
ESD Protection (Air) ±30 kV (IEC 61000-4-2) —
ESD Protection (Contact) ±30 kV (IEC 61000-4-2) —
Channel Configuration Bidirectional (back-to-back) —
Betriebstemperatur -40 C to +85 C -40 °C to +125 °C
RoHS-Status Compliant Compliant
MSL-Level Level 3 Level 3 (per PartGenie summary)
Device Type — Single-channel ESD protection TVS diode
Polarity — Bidirectional (back-to-back TVS)
Working Voltage (Vrwm) — 5 V (typical); 14 V clamp at 5 A Ipp
DC Breakdown Voltage — ±6 V (minimum)
Peak Pulse Current (Ipp) — 5 A (8/20 µs)
ESD Contact Discharge — ±30 kV (IEC 61000-4-2)
ESD Air-Gap Discharge — ±30 kV (IEC 61000-4-2)
IO Capacitance — 10 pF (typical)
Dynamic Resistance (R_DYNAMIC) — 0.37 Ω
ESD Standard — IEC 61000-4-2 Level 4 (Air & Contact)

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