TPD1E10B09DPYR vs TPD1E10B06DPYR 对比

详细并排对比 TPD1E10B09DPYR 出自 Texas Instruments 和 TPD1E10B06DPYR 出自 Texas Instruments。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Texas Instruments
TPD1E10B09DPYR TPD1E10B09DPYR - 10pF, ±9V, ±20kV ESD Protection TVS in 0402 | TI

TPD1E10B09DPYR - 10pF, ±9V, ±20kV ESD Protection TVS in 0402 | TI

TPD1E10B09DPYR ✓ 量产中
Texas Instruments
TPD1E10B06DPYR TPD1E10B06DPYR - Single-Channel ESD TVS Diode, ±30kV | TI

TPD1E10B06DPYR - Single-Channel ESD TVS Diode, ±30kV | TI

TPD1E10B06DPYR ✓ 量产中

规格对比

参数 TPD1E10B09DPYR TPD1E10B06DPYR
品牌 Texas Instruments Texas Instruments
分类 Surge Protectors Surge Protectors
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.06 $0.15
Product Type Single-channel ESD protection TVS diode —
封装 X1SON/0402 (DPY), 1.0 x 0.6 mm X1SON / 2-X1SON (DPY), 1.0 x 0.6 mm
引脚数量 2 —
安装类型 Surface Mount Surface Mount
Working Voltage (VRWM) ±9 V —
Breakdown Voltage (VBR) ±6 V minimum (DC) —
Clamping Voltage 20 V at 4.5 A (8/20 µs) —
Peak Pulse Current 4.5 A (8/20 µs) —
Surge Rating 6 A (8/20 µs) —
Line Capacitance 10 pF (typical) 12 pF (typical)
Dynamic Resistance (RDYN) 0.37 Ω —
Leakage Current 0.5 µA maximum Ultra-low (nA range per datasheet)
ESD Protection (Air) ±30 kV (IEC 61000-4-2) —
ESD Protection (Contact) ±30 kV (IEC 61000-4-2) —
Channel Configuration Bidirectional (back-to-back) —
工作温度 -40 C to +85 C -40 °C to +125 °C
RoHS 状态 Compliant Compliant
MSL 等级 Level 3 Level 3 (per PartGenie summary)
Device Type — Single-channel ESD protection TVS diode
Polarity — Bidirectional (back-to-back TVS)
Working Voltage (Vrwm) — 5 V (typical); 14 V clamp at 5 A Ipp
DC Breakdown Voltage — ±6 V (minimum)
Peak Pulse Current (Ipp) — 5 A (8/20 µs)
ESD Contact Discharge — ±30 kV (IEC 61000-4-2)
ESD Air-Gap Discharge — ±30 kV (IEC 61000-4-2)
IO Capacitance — 10 pF (typical)
Dynamic Resistance (R_DYNAMIC) — 0.37 Ω
ESD Standard — IEC 61000-4-2 Level 4 (Air & Contact)

数据手册与资源

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