TPD1E10B09DPYR vs TPD1E10B06DPYR 비교
다음의 상세 나란히 비교: TPD1E10B09DPYR 제조: Texas Instruments 및 TPD1E10B06DPYR 제조: Texas Instruments. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Texas Instruments
TPD1E10B09DPYR - 10pF, ±9V, ±20kV ESD Protection TVS in 0402 | TI
TPD1E10B09DPYR ✓ 활성
사양 비교
| 파라미터 | TPD1E10B09DPYR | TPD1E10B06DPYR |
|---|---|---|
| 브랜드 | Texas Instruments | Texas Instruments |
| 카테고리 | Surge Protectors | Surge Protectors |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.06 | $0.15 |
| Product Type | Single-channel ESD protection TVS diode | — |
| 패키지 | X1SON/0402 (DPY), 1.0 x 0.6 mm | X1SON / 2-X1SON (DPY), 1.0 x 0.6 mm |
| 핀 수 | 2 | — |
| 실장 유형 | Surface Mount | Surface Mount |
| Working Voltage (VRWM) | ±9 V | — |
| Breakdown Voltage (VBR) | ±6 V minimum (DC) | — |
| Clamping Voltage | 20 V at 4.5 A (8/20 µs) | — |
| Peak Pulse Current | 4.5 A (8/20 µs) | — |
| Surge Rating | 6 A (8/20 µs) | — |
| Line Capacitance | 10 pF (typical) | 12 pF (typical) |
| Dynamic Resistance (RDYN) | 0.37 Ω | — |
| Leakage Current | 0.5 µA maximum | Ultra-low (nA range per datasheet) |
| ESD Protection (Air) | ±30 kV (IEC 61000-4-2) | — |
| ESD Protection (Contact) | ±30 kV (IEC 61000-4-2) | — |
| Channel Configuration | Bidirectional (back-to-back) | — |
| 동작 온도 | -40 C to +85 C | -40 °C to +125 °C |
| RoHS 상태 | Compliant | Compliant |
| MSL 레벨 | Level 3 | Level 3 (per PartGenie summary) |
| Device Type | — | Single-channel ESD protection TVS diode |
| Polarity | — | Bidirectional (back-to-back TVS) |
| Working Voltage (Vrwm) | — | 5 V (typical); 14 V clamp at 5 A Ipp |
| DC Breakdown Voltage | — | ±6 V (minimum) |
| Peak Pulse Current (Ipp) | — | 5 A (8/20 µs) |
| ESD Contact Discharge | — | ±30 kV (IEC 61000-4-2) |
| ESD Air-Gap Discharge | — | ±30 kV (IEC 61000-4-2) |
| IO Capacitance | — | 10 pF (typical) |
| Dynamic Resistance (R_DYNAMIC) | — | 0.37 Ω |
| ESD Standard | — | IEC 61000-4-2 Level 4 (Air & Contact) |