TPD2E001DRLR vs ESD5481MUT3G Vergleich

Detaillierter Direktvergleich von TPD2E001DRLR von Texas Instruments und ESD5481MUT3G von onsemi. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter TPD2E001DRLR ESD5481MUT3G
Marke Texas Instruments onsemi
Kategorie Surge Protectors Surge Protectors
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,16 $0,14
Kanäle 2 —
Working Voltage (Vrwm) 5.5 V —
Typical Clamping Voltage 16 V —
Channel Capacitance (typ) 1.5 pF —
Dynamic Resistance (Rdyn) 1.2 ohm —
ESD Rating (HBM) ±15 kV —
ESD Rating (IEC 61000-4-2, contact) ±8 kV —
IEC 61000-4-2 Level Level 4 —
Leakage Current (max) [DATA_NEEDED: leakage current at Vrwm] —
Breakdown Voltage (Vbr) [DATA_NEEDED: Vbr min/typ/max] —
Peak Pulse Current (Ipp) [DATA_NEEDED: peak pulse current] —
Gehäuse SOT-5 (DRL) 1.6 x 1.6 mm X3-DFN-2 (0.6 x 0.3 mm)
Montageart Surface Mount Surface Mount
Betriebstemperatur -40C to +85C [DATA_NEEDED: operating temperature range]
MSL-Level Level 1 —
RoHS-Status Compliant Compliant
Lead-Free Yes Yes
Manufacturer — onsemi
Product Type — Bidirectional ESD Protection TVS / Zener Diode
Working Voltage (VRWM) — 5 V
Clamping Voltage (VC) at 2 A (8/20 us) — 15 V
Peak Pulse Current (IPP) — 2 A (8/20 us)
Polarity — Bidirectional
Anzahl der Pins — 2
ESD Protection — Best-in-class per onsemi datasheet
Response Time — Sub-nanosecond (typical of TVS avalanche)
Application — Portable consumer electronics, cellular phones, MP3 players, digital cameras
Leakage Current — [DATA_NEEDED: leakage current at VRWM]

Datenblätter & Ressourcen

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