UCC21530 vs UCC21540QDWKRQ1 Vergleich

Detaillierter Direktvergleich von UCC21530 von Texas Instruments und UCC21540QDWKRQ1 von Texas Instruments. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Texas Instruments
UCC21530 UCC21530 - 4A/6A 5.7kVRMS Isolated Dual Gate Driver | TI

UCC21530 - 4A/6A 5.7kVRMS Isolated Dual Gate Driver | TI

UCC21530 ✓ Aktiv

Spezifikationsvergleich

Parameter UCC21530 UCC21540QDWKRQ1
Marke Texas Instruments Texas Instruments
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,75 $2,21
Kanäle 2 (isolated dual-channel) —
Peak Output Current (Source) 4 A —
Peak Output Current (Sink) 6 A —
Isolation Type Capacitive, reinforced Reinforced, capacitive coupling
Isolation Rating 5700 Vrms —
CMTI (Common-Mode Transient Immunity) 125 V/ns minimum —
Max Switching Frequency 5 MHz —
Channel-to-Channel Spacing 3.3 mm 3.3 mm minimum (DWK package)
Enable-Pin Yes —
Programmable Dead Time Yes (DT pin) —
UVLO Yes, input and output sides 8 V (secondary side)
Target Power Devices IGBT, Si MOSFET, SiC MOSFET —
Propagation Delay [DATA_NEEDED: propagation delay typ] —
Gehäuse SOIC-14 (DWK), surface mount 14-SOIC (DWK)
Betriebstemperatur [DATA_NEEDED: operating temperature range] Wide temperature range (automotive)
Supply Voltage (VDD) [DATA_NEEDED: VDD range] —
RoHS-Status Compliant Compliant
Number of Channels — 2
Isolation Voltage — 5700 VRMS
Peak Source Current — 4 A
Peak Sink Current — 6 A
Dead Time — Programmable (external resistor)
Target Transistors — Power MOSFET, IGBT, GaN
Configuration Options — Dual low-side, dual high-side, or half-bridge
Automotive Qualification — AEC-Q100
Montageart — Surface Mount

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