UCC21550 vs UCC21550ADWR Vergleich

Detaillierter Direktvergleich von UCC21550 von Texas Instruments und UCC21550ADWR von Texas Instruments. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Texas Instruments
UCC21550 UCC21550 - 4A/6A 5kVrms Isolated Dual Gate Driver | TI

UCC21550 - 4A/6A 5kVrms Isolated Dual Gate Driver | TI

UCC21550 ✓ Aktiv

Spezifikationsvergleich

Parameter UCC21550 UCC21550ADWR
Marke Texas Instruments Texas Instruments
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,25 $1,19
Kanäle 2 (dual-channel) —
Peak Source Current 4 A 4 A
Peak Sink Current 6 A 6 A
Isolation Rating 5000 Vrms (reinforced, UL1577) —
Isolation Technology Capacitive (silicon dioxide) —
Configurations Dual low-side, dual high-side, or half-bridge —
Supported Transistors MOSFET, SiC, GaN, IGBT —
Dead Time Programmable via DT pin resistor Programmable
UVLO Yes, on input and output supplies (A/B/C grade options) —
Betriebstemperatur -40C to +150C —
Gehäuse 16-SOIC (DW, 300 mil) 16-SOIC (DW)
Montageart Surface Mount Surface Mount
Automotive Qualification UCC21550x-Q1 family AEC-Q100 qualified —
RoHS-Status Compliant Compliant
CMTI [DATA_NEEDED: common-mode transient immunity] > 125 V/ns
Propagation Delay [DATA_NEEDED: typical propagation delay] —
Number of Channels — 2 (dual)
Configuration — Dual low-side, dual high-side, or half-bridge
Isolation Type — Reinforced, capacitive coupling
Isolation Voltage — 5000 Vrms
Max VDD Output Supply — 25 V
UVLO Threshold Option — 5 V
Disable Function — Yes (DISABLE pin)
Driven Devices — Power MOSFET, SiC, GaN, IGBT
Junction Temperature Range — -40C to +150C

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