UCC21550 vs UCC21550ADWR Comparación
Comparación detallada lado a lado de UCC21550 por Texas Instruments y UCC21550ADWR por Texas Instruments. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Texas Instruments
UCC21550ADWR - 4A/6A Isolated Dual Gate Driver | Texas Instruments
UCC21550ADWR ✓ ActivoComparación de especificaciones
| Parámetro | UCC21550 | UCC21550ADWR |
|---|---|---|
| Marca | Texas Instruments | Texas Instruments |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,25 | $1,19 |
| Canales | 2 (dual-channel) | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A |
| Isolation Rating | 5000 Vrms (reinforced, UL1577) | — |
| Isolation Technology | Capacitive (silicon dioxide) | — |
| Configurations | Dual low-side, dual high-side, or half-bridge | — |
| Supported Transistors | MOSFET, SiC, GaN, IGBT | — |
| Dead Time | Programmable via DT pin resistor | Programmable |
| UVLO | Yes, on input and output supplies (A/B/C grade options) | — |
| Temperatura de funcionamiento | -40C to +150C | — |
| Encapsulado | 16-SOIC (DW, 300 mil) | 16-SOIC (DW) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Automotive Qualification | UCC21550x-Q1 family AEC-Q100 qualified | — |
| Estado RoHS | Compliant | Compliant |
| CMTI | [DATA_NEEDED: common-mode transient immunity] | > 125 V/ns |
| Propagation Delay | [DATA_NEEDED: typical propagation delay] | — |
| Number of Channels | — | 2 (dual) |
| Configuration | — | Dual low-side, dual high-side, or half-bridge |
| Isolation Type | — | Reinforced, capacitive coupling |
| Isolation Voltage | — | 5000 Vrms |
| Max VDD Output Supply | — | 25 V |
| UVLO Threshold Option | — | 5 V |
| Disable Function | — | Yes (DISABLE pin) |
| Driven Devices | — | Power MOSFET, SiC, GaN, IGBT |
| Junction Temperature Range | — | -40C to +150C |