UCC21550AQDWKRQ1 vs UCC21550ADWR Vergleich

Detaillierter Direktvergleich von UCC21550AQDWKRQ1 von Texas Instruments und UCC21550ADWR von Texas Instruments. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Texas Instruments
UCC21550AQDWKRQ1 UCC21550AQDWKRQ1 - 4A/6A 5kVRMS Isolated Gate Driver | TI

UCC21550AQDWKRQ1 - 4A/6A 5kVRMS Isolated Gate Driver | TI

UCC21550AQDWKRQ1 ✓ Aktiv

Spezifikationsvergleich

Parameter UCC21550AQDWKRQ1 UCC21550ADWR
Marke Texas Instruments Texas Instruments
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,20 $1,19
Product Type Reinforced isolated dual-channel gate driver —
Peak Source Current 4 A 4 A
Peak Sink Current 6 A 6 A
Number of Channels 2 2 (dual)
Isolation Voltage 5000 Vrms 5000 Vrms
Isolation Technology Capacitive coupling —
Configuration Two low-side, two high-side, or half-bridge Dual low-side, dual high-side, or half-bridge
Dead Time Programmable via DT pin Programmable
Disable Function Yes (DIS pin) Yes (DISABLE pin)
Input Threshold Logic TTL and CMOS compatible —
Target Switch Types Power MOSFET, SiC, GaN, IGBT —
Qualification Automotive (Q1) —
Gehäuse 14-SOIC (DWK) 16-SOIC (DW)
Part Marking 21550AQ —
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich [DATA_NEEDED: Operating Temperature Range] —
Supply Voltage Range (VDD) [DATA_NEEDED: Supply Voltage Range] —
Isolation Type — Reinforced, capacitive coupling
CMTI — > 125 V/ns
Max VDD Output Supply — 25 V
UVLO Threshold Option — 5 V
Driven Devices — Power MOSFET, SiC, GaN, IGBT
Junction Temperature Range — -40C to +150C
RoHS-Status — Compliant

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