UCC21550AQDWKRQ1 vs UCC21550ADWR Comparación
Comparación detallada lado a lado de UCC21550AQDWKRQ1 por Texas Instruments y UCC21550ADWR por Texas Instruments. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Texas Instruments
UCC21550AQDWKRQ1 - 4A/6A 5kVRMS Isolated Gate Driver | TI
UCC21550AQDWKRQ1 ✓ ActivoTexas Instruments
UCC21550ADWR - 4A/6A Isolated Dual Gate Driver | Texas Instruments
UCC21550ADWR ✓ ActivoComparación de especificaciones
| Parámetro | UCC21550AQDWKRQ1 | UCC21550ADWR |
|---|---|---|
| Marca | Texas Instruments | Texas Instruments |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,20 | $1,19 |
| Product Type | Reinforced isolated dual-channel gate driver | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A |
| Number of Channels | 2 | 2 (dual) |
| Isolation Voltage | 5000 Vrms | 5000 Vrms |
| Isolation Technology | Capacitive coupling | — |
| Configuration | Two low-side, two high-side, or half-bridge | Dual low-side, dual high-side, or half-bridge |
| Dead Time | Programmable via DT pin | Programmable |
| Disable Function | Yes (DIS pin) | Yes (DISABLE pin) |
| Input Threshold Logic | TTL and CMOS compatible | — |
| Target Switch Types | Power MOSFET, SiC, GaN, IGBT | — |
| Qualification | Automotive (Q1) | — |
| Encapsulado | 14-SOIC (DWK) | 16-SOIC (DW) |
| Part Marking | 21550AQ | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: Operating Temperature Range] | — |
| Supply Voltage Range (VDD) | [DATA_NEEDED: Supply Voltage Range] | — |
| Isolation Type | — | Reinforced, capacitive coupling |
| CMTI | — | > 125 V/ns |
| Max VDD Output Supply | — | 25 V |
| UVLO Threshold Option | — | 5 V |
| Driven Devices | — | Power MOSFET, SiC, GaN, IGBT |
| Junction Temperature Range | — | -40C to +150C |
| Estado RoHS | — | Compliant |