UCC21550Q-Q1 vs UCC21521DWR Vergleich
Detaillierter Direktvergleich von UCC21550Q-Q1 von Texas Instruments und UCC21521DWR von Texas Instruments. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | UCC21550Q-Q1 | UCC21521DWR |
|---|---|---|
| Marke | Texas Instruments | Texas Instruments |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,10 | $2,15 |
| Product Type | Reinforced isolated dual-channel gate driver | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A |
| Number of Channels | 2 | — |
| Isolation Rating | 5000 Vrms (reinforced) | 5700 Vrms |
| Isolation Technology | Capacitive coupling | Capacitive coupling |
| Configurations | Dual low-side, dual high-side, or half-bridge | Dual low-side, dual high-side, or half-bridge |
| Programmable Dead Time | Yes (single resistor) | — |
| Target Transistors | Power MOSFET, SiC, GaN, IGBT | — |
| Betriebstemperatur | -40C to +150C | -40C to +125C |
| Gehäuse | 16-SOIC (DW) | SOIC-16 (DW) |
| Montageart | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified (Q1) | — |
| Disable Function | Yes | — |
| RoHS-Status | Compliant | Compliant |
| Versorgungsspannung | [DATA_NEEDED: VDD range] | — |
| Channel Count | — | 2 |
| CMTI | — | 100 V/ns (minimum) |
| Propagation Delay | — | 19 ns (typical) |
| Delay Matching | — | 5 ns (maximum) |
| Pulse-Width Distortion | — | 6 ns (maximum) |
| Minimum Pulse Width | — | 10 ns |
| Max Switching Frequency | — | 5 MHz |
| Input Threshold | — | TTL and CMOS compatible (3.3 V logic) |
| Enable / Disable Pin | — | Yes (DIS) |