UCC21550Q-Q1 vs UCC21521DWR 对比

详细并排对比 UCC21550Q-Q1 出自 Texas Instruments 和 UCC21521DWR 出自 Texas Instruments。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Texas Instruments
UCC21550Q-Q1 UCC21550Q-Q1 - 4A/6A Isolated Dual Gate Driver | TI

UCC21550Q-Q1 - 4A/6A Isolated Dual Gate Driver | TI

UCC21550Q-Q1 ✓ 量产中
Texas Instruments
UCC21521DWR UCC21521 - 4A/6A 5.7kVrms Isolated Gate Driver | TI

UCC21521 - 4A/6A 5.7kVrms Isolated Gate Driver | TI

UCC21521DWR ✓ 量产中

规格对比

参数 UCC21550Q-Q1 UCC21521DWR
品牌 Texas Instruments Texas Instruments
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.10 $2.15
Product Type Reinforced isolated dual-channel gate driver —
Peak Source Current 4 A 4 A
Peak Sink Current 6 A 6 A
Number of Channels 2 —
Isolation Rating 5000 Vrms (reinforced) 5700 Vrms
Isolation Technology Capacitive coupling Capacitive coupling
Configurations Dual low-side, dual high-side, or half-bridge Dual low-side, dual high-side, or half-bridge
Programmable Dead Time Yes (single resistor) —
Target Transistors Power MOSFET, SiC, GaN, IGBT —
工作温度 -40C to +150C -40C to +125C
封装 16-SOIC (DW) SOIC-16 (DW)
安装类型 Surface Mount Surface Mount
Automotive Qualification AEC-Q100 qualified (Q1) —
Disable Function Yes —
RoHS 状态 Compliant Compliant
电源电压 [DATA_NEEDED: VDD range] —
Channel Count — 2
CMTI — 100 V/ns (minimum)
Propagation Delay — 19 ns (typical)
Delay Matching — 5 ns (maximum)
Pulse-Width Distortion — 6 ns (maximum)
Minimum Pulse Width — 10 ns
Max Switching Frequency — 5 MHz
Input Threshold — TTL and CMOS compatible (3.3 V logic)
Enable / Disable Pin — Yes (DIS)

数据手册与资源

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