2ED2183S06FXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon
MPN: 2ED2183S06FXUMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.18 | $2.18 |
| 10 | $1.94 | $19.40 |
| 100 | $1.62 | $162.00 |
| 500 | $1.38 | $690.00 |
| 1,000 | $1.21 | $1,210.00 |
| 3,000 | $1.05 | $3,150.00 |
Drop-in alternatives for 2ED2183S06FXUMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet β2ED2183S06FXUMA1 Maximum Ratings & Electrical Characteristics
| Driver Type | Half-Bridge Gate Driver |
| Number of Drivers | 1 |
| Number of Outputs | 1 (half-bridge: high-side + low-side) |
| Configuration | High Side, Low Side, Non-Inverting |
| Maximum Offset Voltage | 650 V |
| Output Current (Sink/Source) | 2.5 A typical |
| Rise Time | 15 ns |
| Fall Time | 15 ns |
| Supply Voltage (VCC) | 10 V to 20 V |
| Bootstrap Supply (VBS) | 10 V to 20 V (typ.) |
| Logic Input Voltage | 3.3 V / 5 V compatible (HIN, LIN) |
| Input Type | Non-Inverting |
| Bootstrap Diode | Integrated |
| Undervoltage Lockout (UVLO) | VCC and VBS |
| Operating Temperature | -40 C to +125 C |
| Package | PG-DSO-8-53 (DSO-8) |
| Mounting Type | Surface Mount |
| MSL Level | 2 |
| Terminal Finish | Tin (e3 per JESD-609) |
| Technology | SOI (Silicon-On-Insulator) |
| RoHS Status | Compliant |
2ED2183S06FXUMA1 Pin Configuration
| Pin 1 | VCC β Low-side and logic supply voltage (10V to 20V) |
| Pin 2 | HIN β Logic input for high-side gate driver (non-inverting) |
| Pin 3 | LIN β Logic input for low-side gate driver (non-inverting) |
| Pin 4 | GND β Ground reference for logic and low-side driver |
| Pin 5 | LO β Low-side gate-drive output to low-side MOSFET/IGBT gate |
| Pin 6 | VS β High-side floating supply return (connected to half-bridge midpoint) |
| Pin 7 | HO β High-side gate-drive output to high-side MOSFET/IGBT gate |
| Pin 8 | VB β High-side floating bootstrap supply (bootstrap capacitor to VS) |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
2ED2183S06FXUMA1 is suitable for 6 applications: Industrial Motor Drives, Solar Microinverters and String Inverters, Switched-Mode Power Supplies (SMPS), Induction Heating Cooktops and Appliances, Class-D Audio Amplifiers, Battery-Powered Power Tools and E-Bikes.
Industrial Motor Drives
The 2ED2183S06FXUMA1 drives the high-side and low-side IGBTs in three-phase variable-frequency drives for industrial pumps, fans, and conveyor motors. Its 650 V maximum offset voltage comfortably exceeds the 400 V to 480 V rectified bus levels common in industrial motor control, while the 2.5 A sink/source current and 15 ns rise/fall times enable switching frequencies up to 20 kHz to suppress audible noise without exceeding switching losses. The integrated bootstrap diode simplifies the high-side supply generation in each phase leg, reducing BOM count and PCB area in multi-axis drive systems.
Recommended
Solar Microinverters and String Inverters
In photovoltaic inverter power stages, the 2ED2183S06FXUMA1 drives the half-bridge switching cells that convert the 600 V-class DC bus into grid-quality AC. The 650 V rating provides 50 V margin above the maximum open-circuit voltage of 600 V solar strings, and the SOI process technology delivers superior dv/dt noise immunity essential when switching high-voltage IGBTs in noisy PV environments. The integrated bootstrap diode reduces component count on the high-voltage side, critical for compact microinverter form factors targeting residential rooftop installations.
Recommended
Switched-Mode Power Supplies (SMPS)
The 2ED2183S06FXUMA1 is well-suited to half-bridge and full-bridge SMPS topologies used in telecom rectifiers, server power supplies, and industrial DC-DC converters. Its 2.5 A gate-drive current can switch 600 V MOSFETs at frequencies exceeding 100 kHz, supporting higher power density through smaller magnetics. The UVLO on both VCC and VBS rails prevents cross-conduction during startup and brownout events, protecting the power stage from catastrophic failure. The non-inverting inputs (HIN, LIN) interface directly with 3.3 V DSP and FPGA PWM outputs without level-shifting logic.
Recommended
Induction Heating Cooktops and Appliances
Resonant half-bridge inverter topologies in induction cooktops operate at 20 kHz to 75 kHz, switching high-current IGBTs into resonant LC tanks. The 2ED2183S06FXUMA1's 15 ns propagation delay and matched channel-to-channel timing minimize dead-time losses, which directly impact cooktop efficiency and audible noise. The 650 V rating handles the 600 V rectified mains comfortably, and the integrated bootstrap diode reduces the part count on the high-side floating supply rail. The -40 C to +125 C operating range suits the hot ambient environment inside cooktop enclosures.
Recommended
Class-D Audio Amplifiers
Half-bridge Class-D amplifiers benefit from the 2ED2183S06FXUMA1's matched propagation delays, which preserve audio signal integrity by ensuring symmetric switching of the high-side and low-side MOSFETs. While most Class-D audio amplifiers run at lower bus voltages (<100 V), the part's 2.5 A drive current and 15 ns rise/fall times deliver clean PWM switching that minimizes total harmonic distortion (THD). The SOI process eliminates the negative-transient glitches that plague junction-isolated drivers, reducing audible clicks and pops during speaker-protect transitions.
Recommended
Battery-Powered Power Tools and E-Bikes
Brushless DC (BLDC) motor controllers in cordless power tools and e-bikes benefit from the compact 2ED2183S06FXUMA1 to drive three-phase MOSFET bridges from battery voltages of 36 V to 96 V. The DSO-8 footprint and integrated bootstrap diode minimize PCB area, critical for space-constrained tool housings. The 2.5 A drive current handles the high inrush currents during motor startup, while UVLO protects the MOSFETs from partial-gate-voltage operation that would cause excessive heat dissipation. The -40 C cold-start rating suits outdoor power-tool and e-bike deployments.
Recommended
Recommended Products Summary
Engineering reference data for 2ED2183S06FXUMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 2ED2182S06FXUMA1 | 2ED2184S06FXUMA1 | 2EDN7534FXTMA1 | IR2104STRPBF | IRS2184SPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | DSO-8 (PG-DSO-8-53) | DSO-8 (PG-DSO-8-53) - same | DSO-8 - same | DSO-8 - same | SOIC-8 - compatible | SOIC-8 - compatible |
| Maximum Offset Voltage | 650 V | 650 V | 650 V | 120 V | 600 V | 600 V |
| Output Current | 2.5 A sink/source | 2.5 A | 2.5 A+ | 5 A | 0.6 A | 1.9 A |
| Rise/Fall Time | 15 ns / 15 ns | similar (~15 ns) | similar (~15 ns) | [DATA_NEEDED] | 70 ns / 35 ns | 40 ns / 20 ns |
| Integrated Bootstrap Diode | Yes | Yes | Yes | No | No | No |
| Technology | SOI (Silicon-On-Insulator) | SOI | SOI | [DATA_NEEDED] | Junction-isolated HVIC | Junction-isolated HVIC |
| VCC Supply Range | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 4.5 V to 20 V | 10 V to 20 V | 10 V to 20 V |
| Operating Temperature | -40 C to +125 C | -40 C to +125 C | -40 C to +125 C | -40 C to +125 C | -40 C to +125 C | -40 C to +125 C |
Key Differentiators
- Integrated bootstrap diode reduces BOM by 1 component (vs IR2104STRPBF)
- Higher offset voltage rating (650 V vs 600 V) (vs IRS2184SPBF)
- Faster switching transitions (15 ns vs 70 ns rise) (vs IR2104STRPBF)
- SOI technology provides superior negative-transient immunity (vs IR2104STRPBF)
Design Notes
Place the bootstrap capacitor (typically 1 uF to 10 uF X7R ceramic) directly between VB (pin 8) and VS (pin 6) with traces shorter than 5 mm to minimize parasitic inductance. The high-side switching loop (HO, gate resistor, MOSFET gate-source, VS return) should be kept compact - this loop carries the highest di/dt and its inductance determines the gate-drive ringing amplitude. Add a 100 nF to 1 uF ceramic decoupling capacitor on VCC within 2 mm of the VCC pin, with a separate ground return to the power-stage GND plane.
Estimated: At 2.5 A peak gate current and 15 ns rise/fall time, the gate-driver dissipation is approximately 0.05 W per channel at 100 kHz, well within the DSO-8 thermal envelope. However, when switching large MOSFETs (>50 nC Qg) at high frequency (>200 kHz), total driver dissipation can exceed 0.5 W and the exposed pad must be soldered to a 1 cmΒ² copper pour. Without the pad, the thermal resistance rises from approximately 50 C/W to over 150 C/W, potentially triggering thermal shutdown at 150 C junction temperature.
Do not exceed the absolute maximum VS transient voltage of -50 V (negative transient). The SOI process provides excellent negative-transient immunity, but sustained negative VS swings below -10 V can still cause latch-up. If the half-bridge midpoint can swing below ground (such as in motor regenerative braking), add a small Schottky diode (e.g., BAT54S) between VS and GND. Also verify that the HIN/LIN inputs do not exceed 5.5 V; a series resistor of 1 kohm is recommended when connecting directly to a 5 V MCU GPIO without an internal clamp.
Keep the gate-drive traces (HIN, LIN, HO, LO) away from the power-stage switching nodes to avoid capacitive coupling that can inject false trigger pulses. Use a 4-layer PCB with a continuous ground plane below the driver and MOSFET/IGBT area. The exposed thermal pad of the DSO-8 package should have at least 4 thermal vias (0.3 mm diameter) connecting to the inner ground plane for optimal heat spreading. Avoid running gate-drive return traces through the power-stage ground region - use a dedicated driver-side ground.
Compliance Information
RoHS compliant per Infineon product page; tin (e3) finish per JESD-609; not AEC-Q100 qualified. Industrial-grade (-40C to +125C) operating range.
