H5TQ2G63GFR-TEC - 2Gb DDR3 SDRAM 128Mx16 FBGA-96 | SK Hynix
Teilenummer: H5TQ2G63GFR-TEC ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $3.17 | $3,17 |
| 10 | $3.01 | $30,10 |
| 100 | $2.86 | $286,00 |
| 500 | $2.7 | $1.350,00 |
| 1.000 | $2.54 | $2.540,00 |
H5TQ2G63GFR-TEC Übersicht
DDR3 SDRAM (Double Data Rate 3 Synchronous DRAM) is a CMOS dynamic random-access memory that transfers data on both rising and falling edges of a differential clock, doubling bandwidth versus single-data-rate designs. Within the memory hierarchy it sits below DDR4/DDR5 generations and above DDR2, and it remains the dominant DRAM class for cost-sensitive industrial, networking, and embedded main-memory designs requiring large density and high bandwidth on a 1.5V-class interface.
Key features of the H5TQ2G63 family include fully synchronous operation referenced to both clock edges, auto self-refresh, an auto precharge function, an asynchronous reset function, data mask (DM) support for byte-wise write masking, dynamic on-die termination (ODT), ZQ calibration for output impedance matching, and write leveling for fly-by topology signal integrity. The -TEC speed-grade suffix denotes an extended industrial temperature rating, making this variant suitable for uncontrolled-environment systems.
Architecturally, the device contains multiple banks with row activation, column read/write pipelines, and burst lengths of 8 (BL8) with on-the-fly addressing, as described in the manufacturer datasheet. Source data identifies the related H5TQ2G63DFR parts as 2,147,483,648-bit CMOS DDR3 SDRAMs operating at up to 933 MHz clock (DDR3-1866 class), ideally suited for main memory applications requiring large memory density and high bandwidth.
Typical applications include embedded main memory for industrial controllers, networking and communication equipment, set-top boxes, and FPGA-based processing boards that implement DDR3 memory controllers. The x16 organization simplifies 16-bit and 32-bit wide memory subsystems with two devices.
Design consideration: DDR3 signal integrity depends on length-matched routing, ODT configuration via mode registers, and correct ZQ calibration resistor placement; follow the reference routing guidelines in the manufacturer datasheet.
This page synthesizes distributor pricing, same-family drop-in alternatives, application guidance, and design notes not found in the manufacturer datasheet.
Drop-in-Alternativen für H5TQ2G63GFR-TEC – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
H5TQ2G63GFR-RDC
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
H5TQ2G63DFR-RDC
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
H5TQ2G63FFRPBC
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
H5TQ2G63BFR-RDC
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
H5TQ2G63EFR-RDC
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
H5TQ2G63DFR-RDC-Q
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
H5TQ2G63GFR-TEC Grenzwerte & elektrische Eigenschaften
| Speichertyp | DDR3 SDRAM |
| Density | 2 Gbit (2,147,483,648 bit) |
| Speicherorganisation | 128M x 16 |
| Gehäuse | 96-ball FBGA (PBGA-96) |
| Betriebstemperatur | -40C to +95C (-TEC / -RDC grades) |
| Clock Frequency (family) | Up to 933 MHz (DDR3-1866 class, per H5TQ2G63DFR datasheet) |
| Auto Self-Refresh | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask Function | Yes |
| Dynamic On-Die Termination (ODT) | Yes |
| ZQ Calibration | Yes |
| Write Leveling | Yes |
| Montageart | Surface Mount (BGA) |
| RoHS-Status | Compliant (Lead-Free & Halogen-Free per datasheet) |
| Access Time (family listing) | 20 ns (H5TQ2G63 BFR-RDC listing) |
H5TQ2G63GFR-TEC 96-ball fbga (pbga-96) Pinbelegungsleitfaden
Pinbelegung für H5TQ2G63GFR-TEC (96-ball fbga (pbga-96)-Gehäuse). Dieser digitale IC umfasst GPIO, Kommunikationsschnittstellen (UART, SPI, I2C) und Versorgungspins. Alternative Pin-Funktionen und Konfigurationsoptionen entnehmen Sie dem Herstellerdatenblatt. Unverzichtbar für Embedded-System-Design und PCB-Layout.
Keine detaillierten Pinbelegungsdaten verfügbar für H5TQ2G63GFR-TEC.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
H5TQ2G63GFR-TEC ist geeignet für 6 Anwendungs: Industrial Controller Main Memory, Networking and Communication Equipment, FPGA Processing Boards, Set-Top Box and Smart TV Memory, Automotive and Rugged Telematics, Test and Measurement Instrumentation.
Industrial Controller Main Memory
The H5TQ2G63GFR-TEC fits industrial controller main memory because its -TEC grade is specified for -40C to +95C ambient operation, matching uncontrolled factory-floor and outdoor cabinet environments. With 2 Gbit of density in a 128M x 16 organization, one device buffers runtime data, logs, and program images for ARM-class embedded CPUs. The auto self-refresh function preserves memory contents during controller clock throttling, while dynamic ODT and ZQ calibration maintain signal integrity across temperature swings without firmware retuning. Placed on a short length-matched DDR3 bus with the asynchronous reset ball tied to the supervisor reset output, the device survives brown-out events cleanly. Compared with consumer-grade DRAM, the industrial suffix eliminates the seasonal field-failure risk of marginal refresh timing at temperature extremes.
Empfohlen
Networking and Communication Equipment
Switches, routers, and line cards use H5TQ2G63-class DDR3 as packet buffer and control-plane memory because the x16 organization and 2 Gbit density scale cleanly to 32-bit or 64-bit buses with two or four devices. The family's fully synchronous operation referenced to both clock edges, supporting up to 933 MHz in the DFR generation, provides the bandwidth that queue-management silicon demands. Write leveling explicitly supports fly-by clock topology, the standard routing scheme on multi-device network memory buses, and data mask allows efficient partial packet writes. Dynamic on-die termination adapts impedance as bus loading changes between populated device positions, simplifying shared-bus designs. Designers should keep DQS/DQ trace-length skew within datasheet tolerances and enable ZQ calibration after every reset for consistent eye margins across a chassis lifecycle.
Empfohlen
FPGA Processing Boards
Xilinx 7-series and similar FPGAs pair naturally with H5TQ2G63 DDR3 because their hardened memory controllers implement the exact feature set this DRAM provides: write leveling for fly-by topology, dynamic ODT, ZQ calibration, and auto precharge. A single 2Gb x16 device gives a low-cost Artix/Spartan board 256 MB of frame buffer or coefficient storage, while two devices double width to 32 bits. The asynchronous reset function lets the FPGA fabric hold the DRAM in reset until the memory controller completes calibration, avoiding the classic power-up state corruption seen with poorly sequenced DRAM designs. For best results, follow the memory-controller's reference calibration sequence, place the ZQ resistor with a short low-inductance connection, and reserve controller headroom for the DFR-generation 933 MHz timing tables when future BIOS updates raise clock speed.
Empfohlen
Set-Top Box and Smart TV Memory
Set-top box and smart TV SoCs use H5TQ2G63 DDR3 as the primary system memory for video decoding buffers, channel tables, and application frames. The 2 Gbit x16 configuration matches the 16-bit and 32-bit DDR3 interfaces of consumer media SoCs, and 256 MB per device covers the memory footprint of hybrid broadcast platforms. The data mask function allows efficient partial-frame writes during video overlay composition, and auto self-refresh keeps OSD contents intact when the system drops into standby while only the DRAM self-refresh clock runs, cutting standby power dramatically. Because these products ship in sealed enclosures, selecting the -TEC or -RDC industrial suffix protects against the elevated ambient temperatures inside AV cabinets. Route the DDR3 bus on inner layers with a solid reference plane to hold eye margins at speed.
Empfohlen
Automotive and Rugged Telematics
Telematics gateways, dashboard recorders, and rugged loggers benefit from the H5TQ2G63 -TEC/-RDC grades because -40C to +95C operation covers under-dash and engine-bay-adjacent modules. The 2 Gbit density stores circular video/log buffers, and auto self-refresh preserves state across ECU sleep-wake cycles where only the DRAM stays alive. Dynamic ODT and ZQ calibration are especially valuable in automotive environments, where temperature-driven impedance drift would otherwise force conservative fixed termination and reduced speed margins. The asynchronous reset input should be driven by the module's power supervisory IC so the DRAM reinitializes deterministically after crank events. Although this family is not AEC-Q100 qualified per the data available, the industrial temperature grades are widely used in non-safety automotive-adjacent and rugged commercial designs; confirm qualification requirements before use in safety functions.
Empfohlen
Test and Measurement Instrumentation
Bench instruments, data recorders, and logic analyzers use H5TQ2G63 DDR3 as deep capture memory, where the 128M x16 organization gives 256 MB of sample storage per device and dual-device 32-bit buses double throughput. The DDR3 feature set maps directly onto FPGA-based acquisition engines: write leveling enables the fly-by clocking used on multi-load capture boards, data mask supports gap-free circular buffering with selective overwrite, and auto precharge shortens random-access latency when the analysis engine reads scattered capture windows. ZQ calibration after each power cycle keeps the termination impedance accurate across the instrument's warm-up drift, protecting eye margins on long acquisition bursts. Designers should budget the refresh interval against maximum continuous-capture length and prefer the DFR-generation timing tables for the highest sample-clock headroom on newly designed boards.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für H5TQ2G63GFR-TEC – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | H5TQ2G63GFR-RDC | H5TQ2G63DFR-RDC | H5TQ2G63FFRPBC | H5TQ2G63BFR-RDC |
|---|---|---|---|---|---|
| Package | 96-ball FBGA (PBGA-96) | 96-ball FBGA (PBGA-96) - same | 96-ball FBGA (PBGA-96) - same | 96-ball FBGA (PBGA-96) - same | 96-ball FBGA (PBGA-96) - same |
| Brand | SK Hynix | SK Hynix | SK Hynix | SK Hynix | SK Hynix |
| Density / Organization | 2 Gbit / 128M x 16 | 2 Gbit / 128M x 16 | 2 Gbit / 128M x 16 | 2 Gbit / 128M x 16 | 2 Gbit / 128M x 16 |
| Auto Self-Refresh / Auto Precharge | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
Wichtigste Unterscheidungsmerkmale
- Extended industrial temperature grade at consumer-like pricing (vs. H5TQ2G63GFR-RDC)
- Newer GFR die generation with RoHS lead-free and halogen-free process (vs. H5TQ2G63BFR-RDC)
- Trade-off: DFR generation offers higher speed ceiling (vs. H5TQ2G63DFR-RDC)
Designhinweise
DDR3 x16 buses live or die on skew control. Keep all DQ/DQS traces within the same byte-lane group length-matched to each other, and match the differential DQS pair tightly. Use fly-by routing for the clock/address/command bus and enable write leveling during controller initialization - the H5TQ2G63 explicitly supports write leveling for exactly this topology. Reference all high-speed traces to an unbroken ground plane and avoid crossing plane splits under the memory bus. Estimated: for FR-4, allow roughly 150 ps per inch of additional delay when computing intra-group skew budgets.
Estimated: a 2Gb x16 DDR3 at 1.5V-class VDD (confirm exact voltage from the datasheet) draws a significant portion of its current during activate/precharge cycling rather than steady state. Size the VDD/VDDQ rail with bulk capacitance near each device and place at least four 0.1 uF ceramic decoupling capacitors within 3 mm of the FBGA power balls, spread across the package perimeter. Never share the DRAM VTT termination rail with other loads - VTT current spikes during bus turnaround are large and fast. Verify the exact VDD/VDDQ values and IDD profiles from the manufacturer datasheet before finalizing the regulator design.
Three recurring pitfalls with this family: (1) using a commercial temperature suffix in an enclosure that exceeds its range - always order -TEC or -RDC for -40C to +95C designs; (2) omitting or mis-valuing the ZQ calibration resistor, which degrades output impedance accuracy and eye margins - connect it per the datasheet with a short, low-inductance trace; (3) mixing GFR and DFR die generations on the same bus without re-validating controller AC timing, since DFR parts reach DDR3-1866 class speeds per their datasheet. Always re-run memory calibration after any die-generation swap.
Place the H5TQ2G63GFR-TEC within 50 mm of the memory controller for point-to-point designs, and keep the 96-ball FBGA escape routing on the outer layer close to the package before via-fanning to inner layers. For two-device 32-bit buses, use T-topology or fly-by consistently and enable the corresponding controller topology setting. On the layout, reserve thermal relief on the BGA pads per standard BGA land-pattern practice and inspect with X-ray after reflow, since DDR3 solder opens under the package are invisible optically. Follow IPC-standard BGA land pattern geometry for the 0.8 mm ball pitch typical of PBGA-96 DDR3.
Compliance-Informationen
H5TQ2G63GFR datasheet description states '2Gb DDR3 SDRAM Lead-Free & Halogen-Free (RoHS Compliant)'. No AEC-Q100 or REACH data found in provided sources.
