IPG20N10S436AATMA1 vs BSC030N08NS5ATMA1 Vergleich

Detaillierter Direktvergleich von IPG20N10S436AATMA1 von Infineon und BSC030N08NS5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPG20N10S436AATMA1 BSC030N08NS5ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,68 $0,55
Configuration Dual N-Channel (2 Elements with Built-in Diode) —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) 20 A (per channel) —
Total Power Dissipation (PD) 43 W —
Operating Mode Enhancement Mode —
Gehäuse PG-TDSON-8-10 (Wettable Flank) PG-TDSON-8-7 (SuperSO8 5x6 mm)
Montageart Surface Mount Surface Mount
Operating Temperature (TJ max) +175 C —
JESD-609 Code e3 —
MSL-Level MSL1 (260 C peak reflow) 1 (per JEDEC J-STD-020)
Automotive Qualification AEC-Q101 —
Avalanche Tested 100% —
AOI Compatible Yes (Wettable Flank) —
RoHS-Status Compliant (Green Product) Compliant
Channel Type N-Channel Normal Level —
Manufacturer — Infineon Technologies
Product Type — N-Channel Power MOSFET
Technology — OptiMOS 5
Drain-Source Voltage (VDS) max — 80 V
Continuous Drain Current (ID) at TC=25C — 100 A
Pulsed Drain Current (ID,pulse) — 161 A
Gate-Source Voltage (VGS) max — +/-20 V
RDS(on) max at VGS=10 V — 3.0 mOhm
RDS(on) max at VGS=7 V — [DATA_NEEDED: RDS(on) at VGS=7V]
Power Dissipation (Ta=25C, 1.5mm FR4) — 2.5 W
Power Dissipation (TC=25C) — 139 W
Operating Temperature Range (TJ) — -55C to +150C
Halogenfrei — Yes
Lead-Free — Yes
Gate Drive Logic — Standard 10V, compatible with 12V drive
Optimized Application — Synchronous Rectification

Datenblätter & Ressourcen

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