IRF1310NPBF - 100V 42A N-Channel HEXFET MOSFET | Infineon
Teilenummer: IRF1310NPBF ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.62 | $16,20 |
| 100 | $1.38 | $138,00 |
| 500 | $1.18 | $590,00 |
| 1.000 | $0.98 | $980,00 |
IRF1310NPBF Übersicht
A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate (typically oxide) to modulate current flow between drain and source terminals. The HEXFET family, originally developed by International Rectifier (now part of Infineon), uses a cellular planar stripe structure with thousands of parallel MOSFET cells on a single die. Within the broader semiconductor taxonomy, this places the IRF1310NPBF in the power MOSFET > discrete transistor > discrete semiconductor hierarchy. The device is characterized by very low on-resistance per unit of silicon area, fast switching speed, and excellent thermal performance when mounted to a heatsink.
Key features include 100 V drain-source breakdown voltage, 42 A continuous drain current at TC=25C, 36 mOhm maximum static drain-source on-resistance (RDS(on)) at VGS=10V and ID=25A, a 175C maximum junction temperature, and an avalanche-energy-rated body diode. The TO-220AB package provides a low thermal resistance path (junction-to-case) and supports through-hole mounting with a tab that doubles as the drain terminal, enabling direct mechanical attachment to a heatsink.
From a design perspective, the IRF1310NPBF's low gate charge (73.3 nC) and standard 10V gate drive simplify driver selection, while the low RDS(on) minimizes conduction losses in high-current loops. Designers should observe safe operating area (SOA) limits, especially during switching transients, and provide adequate heatsinking at full 42A loads.
Typical applications include switched-mode power supplies (SMPS), DC motor drives, uninterruptible power supplies (UPS), automotive ignition and fuel-injection switching, solenoid drivers, audio amplifier output stages, and high-current DC load switches. The combination of high current rating and TO-220 form factor makes it a workhorse for industrial and hobbyist power electronics.
When designing with this part, ensure VGS drive swings to 10V for full enhancement; logic-level signals (3.3V or 5V) will not fully turn on the device. Always check the SOA graph in the manufacturer datasheet for your specific VDS, ID, and pulse duration, and add a gate-source resistor (typically 10-100 ohm) to suppress ringing on long gate traces.
Drop-in-Alternativen für IRF1310NPBF – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit IRF1310NPBF (gleiche Bauform und Footprint) – abweichend in Package, Technology, Total Gate Charge (Qg), Mounting Type, RoHS Status.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
IRF1310NSTRLPBF
✅ Drop-In✓ Auf Lager
$0.84 / Stück
Datenblatt ansehen →IRF3710ZPBF
✅ Drop-In✓ Auf Lager
$0.88 / Stück
Datenblatt ansehen →IRF1310NSTRLPBF
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$0.84 / Stück
Datenblatt ansehen →VBM1104N
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
NTP6411ANG
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IXTP42N10T
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
IRF1310NPBF Grenzwerte & elektrische Eigenschaften
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at TC=25C | 42 A |
| Gate-Source Voltage (VGS) max | ±20 V |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | 36 mOhm |
| Total Gate Charge (Qg) | 73.3 nC |
| Power Dissipation (PD) at TC=25C | 160 W |
| Maximum Junction Temperature | 175 C |
| Betriebstemperaturbereich | -55 C to +175 C |
| Gehäuse | TO-220AB (through-hole) |
| Montageart | Through Hole |
| Technology | HEXFET |
| RoHS-Status | Compliant (PBF suffix) |
IRF1310NPBF Pin-Konfiguration
| Pin 1 | Gate — Gate control input; drive to +10V for full enhancement |
| Pin 2 | Drain — Drain terminal (also connected to mounting tab) |
| Pin 3 | Source — Source terminal; return path for drain current |
Sicherer Arbeitsbereich (DC, TC=25C)
Typische Anwendungen
IRF1310NPBF ist geeignet für 7 Anwendungs: Switched-Mode Power Supplies (SMPS), DC Motor Drive (H-Bridge / Half-Bridge), Uninterruptible Power Supply (UPS) / Battery Switch, Automotive 12V/24V Load Switch, Solenoid and Relay Driver, Audio Amplifier Output Stage, Solar Charge Controller / Battery Management.
Switched-Mode Power Supplies (SMPS)
The IRF1310NPBF's 100V VDS rating and 42A continuous drain current make it a workhorse primary-side switch in 48V-input telecom and industrial SMPS designs. Its 36 mOhm maximum RDS(on) at VGS=10V keeps conduction losses manageable at full load, while the 73.3 nC total gate charge allows switching frequencies up to 50-100 kHz with a standard gate driver. The TO-220AB package supports direct mounting to a chassis or PCB heatsink, and the 160W power dissipation rating provides thermal headroom for sustained operation. Compared to lower-voltage alternatives, the 100V rating gives margin against voltage spikes on poorly regulated 48V busses.
Empfohlen
DC Motor Drive (H-Bridge / Half-Bridge)
Brushed DC motor control at 12V/24V/36V bus voltages uses the IRF1310NPBF as the high-side or low-side switch in H-bridge and half-bridge topologies. The 42A continuous current rating supports motors up to ~500W mechanical output, and the 100V VDS provides generous margin against back-EMF during commutation. Designers should add flyback diodes across the motor terminals and observe the SOA during the switching transient. The TO-220AB through-hole package is convenient for prototype motor controllers and is easily heatsunk to a chassis for sustained 20-30A operation.
Empfohlen
Uninterruptible Power Supply (UPS) / Battery Switch
The IRF1310NPBF is commonly used as the main battery-disconnect switch in 12V/24V/48V UPS systems, where it must carry tens of amps continuously and switch on/off under load. The 100V VDS rating easily covers 48V battery stacks, and the 42A current rating supports inverter peak loads during AC transfer. Its low RDS(on) of 36 mOhm at 25C keeps voltage drop and dissipation low in the always-on path. The TO-220AB package allows PCB-mount with bolt-on heatsink for sustained 30-40A operation in rack-mounted UPS units.
Empfohlen
Automotive 12V/24V Load Switch
The IRF1310NPBF handles high-current automotive loads such as headlamp relays, fuel pumps, cooling fans, and heated seats in 12V and 24V vehicle electrical systems. The 100V VDS rating provides safety margin against load-dump transients (which can spike to 60-80V on 24V systems), and the 42A continuous rating supports most accessory loads. The TO-220AB package is robust for underhood mounting with appropriate thermal management. For AEC-Q101 qualified applications, the IRF1310NSTRLPBF variant should be used instead of the standard part.
Empfohlen
Solenoid and Relay Driver
Industrial solenoid valves, relay coils, and electromagnetic actuators require robust low-side switches capable of handling inductive kickback, which is exactly the use case for the IRF1310NPBF. The 100V VDS rating absorbs the inductive flyback when the solenoid is de-energized, and the 42A current rating easily handles inrush currents. The TO-220AB through-hole package is widely accepted in industrial control cabinets where hand-soldering or socket-mounting is common. A freewheeling diode across the solenoid is still recommended for maximum reliability.
Empfohlen
Audio Amplifier Output Stage
Class-D and high-power Class-AB audio amplifiers use the IRF1310NPBF as an output-stage switch thanks to its 42A current rating and 100V breakdown. The low RDS(on) of 36 mOhm minimizes conduction loss in the audio path, while the 73.3 nC total gate charge supports switching frequencies up to 500 kHz for Class-D modulation. The TO-220AB package provides a clean heatsinkable mounting solution for the high dissipation typical in audio output stages (up to 160W with proper thermal design). The 175C maximum junction temperature also provides thermal safety margin for high-power music peaks.
Empfohlen
Solar Charge Controller / Battery Management
Off-grid solar charge controllers and MPPT (Maximum Power Point Tracking) converters use the IRF1310NPBF as the main switching element on 24V/48V PV systems. The 100V VDS rating safely covers open-circuit voltages of 24V PV panels (which can reach 40V in cold conditions), and the 42A current rating supports 1-1.5 kW charge controllers. Low RDS(on) keeps the conduction path efficient during bulk charging, and the TO-220AB package is rugged for outdoor enclosure mounting. The part's 175C max junction temp is also helpful in high-ambient outdoor installations.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für IRF1310NPBF – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | IRF1310NSTRLPBF | IRF3710ZPBF | IRF1310N | VBM1104N | NTP6411ANG | IXTP42N10T |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | VBsemi | onsemi | IXYS |
| Package | TO-220AB | TO-220AB (same) | TO-220AB (same) | TO-220AB (same) | TO-220AB (same) | TO-220AB (same) | TO-220AB (same) |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V |
| Continuous Drain Current (ID) | 42 A | 42 A | 40 A | 42 A | 55 A | 58 A | 42 A |
| Automotive Grade (AEC-Q101) | No | Yes (AEC-Q101) | No | No | No | No | No |
| RoHS Compliant | Yes (Pb-free) | Yes | Yes | No (SnPb finish) | Yes | Yes | Yes |
Wichtigste Unterscheidungsmerkmale
- 100V VDS rating with 36 mOhm RDS(on) in TO-220AB (vs. IRF3205 (55V/8mOhm))
- AEC-Q101 automotive-qualified drop-in variant available (vs. IRF1310N (non-AEC-Q101))
- Pin-compatible with cross-brand alternatives offering higher current (vs. NTP6411ANG (onsemi, 58A))
Designhinweise
At continuous 42A drain current, power dissipation in the IRF1310NPBF approaches 160W (P = I^2 * R = 42^2 * 0.036 = 63W minimum, scaling higher as RDS(on) increases with temperature). Estimated: a TO-220AB junction-to-ambient thermal resistance of ~62 C/W with no heatsink results in a 100 C+ junction temperature rise at 1.5W alone. For any continuous current above 5A, mount the tab to a heatsink with thermal compound; for >20A, use a forced-air-cooled heatsink. The junction-to-case thermal resistance of 0.94 C/W means most heat must exit through the tab.
When using the IRF1310NPBF in a switching application, place a 10-100 ohm gate resistor close to the gate pin to dampen ringing caused by gate-source capacitance and PCB trace inductance. Add a 1 kohm pull-down resistor from gate to source to ensure the MOSFET stays off when the driver is in high-impedance state. The drain and source traces should be wide (at least 50 mils per ampere of continuous current) to minimize conduction losses and trace heating.
Do not drive the IRF1310NPBF gate directly from a 3.3V or 5V microcontroller output - the device requires VGS of 10V for full enhancement and rated RDS(on). A logic-level gate signal will leave the MOSFET in the linear region, causing excessive dissipation and possible thermal failure. Use a dedicated gate driver IC (such as IRS2110SPBF or IR2109SPBF) or a simple NPN/PNP push-pull driver with 12V supply. Also: do not exceed VGS of ±20V absolute maximum, even briefly, as gate oxide rupture is permanent.
In high-frequency switching circuits (above 50 kHz), minimize the source-lead inductance by using a Kelvin connection: tie the gate-driver ground return directly to the source pin, separate from the power-source path. This prevents negative VGS spikes that can otherwise turn off the MOSFET during turn-on. Keep the gate-drive loop (gate-driver output -> gate -> source -> gate-driver ground) physically small, ideally over a ground plane on the PCB.
Compliance-Informationen
IRF1310NPBF is RoHS compliant per the PBF suffix; base IRF1310N is non-Pb-free. AEC-Q101 automotive qualification is on the IRF1310NSTRLPBF variant, not the standard part.
