IRF540ZPBF - 100V 36A N-Channel HEXFET MOSFET | Infineon
Teilenummer: IRF540ZPBF ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $1.52 | $1,52 |
| 10 | $1.28 | $12,80 |
| 100 | $0.92 | $92,00 |
| 500 | $0.74 | $370,00 |
| 1.000 | $0.62 | $620,00 |
IRF540ZPBF Übersicht
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to efficiently switch and amplify signals in power electronics. The HEXFET family represents Infineon's optimized vertical DMOS architecture, which falls under the broader categories of: discrete semiconductor -> MOSFET -> N-channel MOSFET -> power MOSFET -> switching transistor. The IRF540Z series specifically targets the 100 V breakdown class, occupying a middle position between low-voltage logic-level parts and high-voltage IGBTs, and is widely used for synchronous rectification, DC-DC conversion, motor drive, and relay replacement.
Key features of the IRF540ZPBF include ultra-low on-resistance (26.5 mOhm max), fast switching speed enabled by low Q_g (42 nC typical), fully avalanche-rated design, and a TO-220AB package with industry-standard pinout that allows direct drop-in replacement of legacy IRF540-series parts. The device is also qualified for automotive environments, with extended temperature range and enhanced reliability testing.
Technically, the IRF540ZPBF uses a stripe-cell DMOS design with a polysilicon gate, achieving an excellent figure-of-merit (FOM = R_DS(on) x Q_g) for its voltage class. The 175 degC maximum junction temperature and 92 W power dissipation rating give designers substantial thermal headroom in industrial and automotive systems. Compared with older IRF540 generations, the 'Z' suffix variant offers significantly lower on-resistance while preserving the same TO-220AB footprint.
Typical applications include DC motor drives in automotive and industrial systems, solenoid and relay drivers, switching-mode power supplies (SMPS) primary-side switches, DC-DC converters, battery protection circuits, and general-purpose high-current switching. It is widely used as an upgrade for IRF540N, IRF640, and similar 100 V-class MOSFETs.
When designing with the IRF540ZPBF, ensure the gate driver can source and sink sufficient peak current (typically 1-2 A) to charge the input capacitance within the desired switching interval. A 10 Ohm gate resistor is recommended to damp ringing, and the drain-source avalanche energy must be derated according to junction temperature using the SOA curves in the datasheet.
This page synthesizes distributor pricing, parametric drop-in alternatives, and practical design notes beyond what the manufacturer datasheet alone provides, enabling faster BOM decisions and second-source qualification.
Drop-in-Alternativen für IRF540ZPBF – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit IRF540ZPBF (gleiche Bauform und Footprint) – abweichend in Technology, Package, RoHS Status, Mounting Type, Lead-Free.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
IRF540NPBF
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IRF540PBF
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IRF3710ZPBF
✅ Drop-In✓ Auf Lager
$0.88 / Stück
Datenblatt ansehen →IRFB4110PBF
✅ Drop-In✓ Auf Lager
$1.55 / Stück
Datenblatt ansehen →IRF1310NPBF
✅ Drop-In✓ Auf Lager
$0.98 / Stück
Datenblatt ansehen →IRFR3710ZTRPBF
✅ Drop-In✓ Auf Lager
$0.42 / Stück
Datenblatt ansehen →IRF540ZPBF Grenzwerte & elektrische Eigenschaften
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRF540ZPBF |
| Technology | HEXFET Power MOSFET (N-Channel DMOS) |
| Drain-Source Voltage (V_DS) | 100 V |
| Continuous Drain Current (I_D) at T_C=25C | 36 A |
| On-Resistance R_DS(on) max at V_GS=10V | 26.5 mOhm |
| Total Gate Charge (Q_g) | 42 nC |
| Power Dissipation (P_D) at T_C=25C | 92 W |
| Maximum Junction Temperature | 175 C |
| Betriebs-Sperrschichttemperaturbereich | -55 C to +175 C |
| Gehäuse | TO-220AB (through-hole, 3-lead) |
| Montageart | Through Hole |
| Pin-Anzahl | 3 (Gate, Drain, Source) |
| RoHS-Status | Compliant |
| Lead-Free | Yes |
| Automotive Qualified | Yes (per datasheet description) |
IRF540ZPBF Pin-Konfiguration
| Pin 1 | Gate — MOSFET gate input; connect to gate driver through 10-22 Ohm series resistor |
| Pin 2 | Drain — MOSFET drain; electrically bonded to the metal tab, connect to high-current load |
| Pin 3 | Source — MOSFET source; connect to circuit ground (low-side switch) or low-side of load |
Sicherer Arbeitsbereich (DC, T_C=25C)
Typische Anwendungen
IRF540ZPBF ist geeignet für 6 Anwendungs: Automotive 12V/24V DC Motor Drive, SMPS Primary-Side Switch, Solenoid and Relay Driver, Battery Protection and Load Switching, LED Lighting Driver Switch, DC-DC Converter Switch Element.
Automotive 12V/24V DC Motor Drive
The IRF540ZPBF is well suited for automotive 12 V and 24 V brushed DC motor drives, including HVAC blower motors, fuel pumps, and window-lift motors. Its 100 V V_DS rating provides more than 3x margin over 24 V transients (ISO 7637 load-dump pulses up to 65 V), while 36 A continuous drain current handles typical 20-30 A motor inrush without thermal limiting. The 26.5 mOhm R_DS(on) keeps conduction losses low at typical 10-15 A running currents, and the TO-220AB tab can be screwed directly to the chassis for heatsinking.
Empfohlen
SMPS Primary-Side Switch
In switching-mode power supplies operating from 48 V telecom rails or 24 V industrial buses, the IRF540ZPBF functions as the primary-side switching element in flyback, forward, or push-pull topologies. Its 100 V breakdown comfortably exceeds the maximum reflected drain voltage in 24 V-input designs (typically 60-80 V), while the 42 nC Q_g enables switching frequencies of 100-200 kHz without excessive driver losses. The 92 W power dissipation rating and 175 C junction limit give generous thermal margin in 50-100 W converter designs.
Empfohlen
Solenoid and Relay Driver
The IRF540ZPBF excels as a low-side solenoid driver for industrial valves, automotive injectors, and electromechanical relays. With 36 A peak current capability, it can switch solenoids drawing 10-25 A continuous with substantial inrush headroom. The fast switching speed (Q_g=42 nC) supports PWM current-regulation schemes for proportional solenoid control at 1-25 kHz, and the 100 V rating withstands flyback voltages when paired with a flyback diode. Automotive qualification makes it ideal for under-hood relay replacement.
Empfohlen
Battery Protection and Load Switching
In 12-48 V battery management systems, the IRF540ZPBF serves as the main load disconnect switch or reverse-battery protection element. Its 36 A continuous rating handles typical e-bike, e-scooter, and small EV traction pack currents up to 30 A continuous discharge. The 100 V V_DS provides protection margin against regen-voltage spikes, and the low R_DS(on) minimizes voltage drop (0.8 V at 30 A), reducing wasted power during peak loads. The TO-220AB package allows direct PCB-mount or chassis-mount heatsinking.
Empfohlen
LED Lighting Driver Switch
The IRF540ZPBF works as the high-side or low-side switch in constant-current LED drivers for automotive headlamps, architectural lighting, and high-bay industrial fixtures. Its low 26.5 mOhm R_DS(on) keeps conduction losses below 5 W at 15 A driving currents for a 50 W LED string, and the 100 V rating supports long LED strings of 30+ emitters at 24 V supply. PWM dimming at 200-1000 Hz is enabled by the 42 nC Q_g, with clean switching transitions and minimal ringing.
Empfohlen
DC-DC Converter Switch Element
In buck, boost, and buck-boost DC-DC converters operating from 24-72 V input rails, the IRF540ZPBF is used as the main switching MOSFET for power levels of 50-200 W. The 100 V V_DS handles 72 V input with 28 V margin, and the 26.5 mOhm R_DS(on) achieves >95% efficiency at 100 kHz switching. Its automotive grade and 175 C junction limit suit harsh-environment industrial converters operating from -40 C to +125 C ambient.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für IRF540ZPBF – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | IRF540NPBF | IRF540PBF | IRF3710ZPBF | IRFB4110PBF | IRF1310NPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | TO-220AB | TO-220AB (same) | TO-220AB (same) | TO-220AB (same) | TO-220AB (same) | TO-220AB (same) |
| V_DS (V) | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V |
| Maximum Junction Temperature | 175 C | 175 C | 150 C (legacy) | 175 C | 175 C | 175 C |
| Automotive Qualified | Yes | Yes | No (commercial) | Yes | Yes | Yes |
Wichtigste Unterscheidungsmerkmale
- Lowest R_DS(on) in IRF540 generation family (vs. IRF540NPBF)
- Higher continuous current rating with same footprint (vs. IRF540PBF)
- Automotive-qualified with extended temperature range (vs. IRF540PBF (commercial))
Designhinweise
Estimated: At continuous 20 A drain current in the IRF540ZPBF with R_DS(on)=26.5 mOhm, conduction loss is roughly 26.5 mOhm x 20A x 20A = 10.6 W (input values: I_D=20A, R_DS(on)=26.5 mOhm max). The TO-220AB thermal resistance (theta_JC ~1.7 C/W) yields a junction-to-case rise of ~18 C, so the heatsink must keep case temperature below 150 C. Always use thermal compound and torque the mounting screw to 6-8 in-lb for reliable thermal transfer.
Place a 10-22 Ohm gate resistor within 5 mm of the gate pin to damp LC resonance between the driver inductance and the MOSFET's C_iss (typically 1700 pF for the IRF540ZPBF). Keep the gate-drive loop (driver output to gate to source return) area below 1 cm^2 to minimize ringing. The drain-source tab provides a low-inductance Kelvin connection - use a separate source-kelvin trace if available.
Do not exceed V_GS ratings (typically +/-20 V for the IRF540ZPBF). During turn-off transients, gate-drain capacitance (C_rss ~80 pF) can couple drain voltage spikes back to the gate; ensure the gate-driver pull-down can sink this displacement current, otherwise use a gate-to-source Zener clamp of 15-18 V. When switching inductive loads, always include a flyback diode with reverse-recovery rating below 100 ns.
Compliance-Informationen
PBF suffix indicates lead-free plating. Automotive-qualified per Infineon datasheet description; AEC-Q100 status to be confirmed by procurement team. RoHS and REACH compliance verified through distributor listings.
