IRSM808-105MH - 10A 500V Half-Bridge IPM | Infineon
Teilenummer: IRSM808-105MH ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $4.19 | $4,19 |
| 10 | $3.78 | $37,80 |
| 100 | $3.38 | $338,00 |
| 500 | $2.95 | $1.475,00 |
| 1.000 | $2.65 | $2.650,00 |
IRSM808-105MH Übersicht
An Intelligent Power Module (IPM) is a fully integrated power-electronics building block that combines the power stage (typically IGBT or MOSFET switches) and the gate-driver circuitry into a single, electrically isolated package. IPMs sit within the broader power-semiconductor taxonomy: power module -> IPM -> half-bridge module -> motor-driver IPM. By co-packaging the gate driver with the power switches, IPMs reduce parasitic inductance, shrink PCB area, shorten design cycles, and provide built-in protection that would otherwise require dozens of discrete components.
Key features of the IRSM808-105MH include 500 V blocking voltage per switch, 0.8 ohm maximum RDS(on), a built-in dead-time generation block, an enable/FAULT interface, and under-voltage lockout (UVLO) on the bootstrap supply. The module integrates two 500 V FREDFETs in a half-bridge topology, allowing designers to construct single-phase or three-phase inverter stages by combining two or three modules with a small microcontroller. The PQFN 8x9 mm footprint offers up to 60% smaller PCB area than discrete 3-phase inverter solutions.
Typical applications include energy-efficient fan and pump motor drives, refrigerator compressor inverters, washing-machine drain-pump drives, dishwasher circulation pumps, and small HVAC blowers. The integrated dead-time control simplifies firmware, while the high 500 V rating provides ample margin across universal-input 110/220 Vac rectified DC-bus designs. The rugged HVIC tolerates negative VS transients and provides ESD-protected logic inputs, increasing field reliability compared with discrete gate-driver approaches.
Drop-in-Alternativen für IRSM808-105MH – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit IRSM808-105MH (gleiche Bauform und Footprint) – abweichend in Dead-Time Generation, Gate Driver, MSL Level, Operating Temperature Range, Package.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
IRSM808-105MHTR
✅ Drop-In✓ Auf Lager
$2.31 / Stück
Datenblatt ansehen →IRSM807-105MH
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IRSM808-105MHTRPBF
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
IRSM808-105MH Grenzwerte & elektrische Eigenschaften
| Topologie | Half-bridge (2 FREDFET switches + HVIC driver) |
| Drain-Source Blocking Voltage (VDS) | 500 V |
| Continuous Drain Current (ID @ TC=25C) | 10 A |
| Static Drain-Source On-Resistance (RDS(on)) | 0.8 ohm max |
| Maximum Switching Power | 200 W |
| Gate Driver | Integrated HVIC (half-bridge, bootstrap) |
| Dead-Time Generation | Internal (configurable via DT pin) |
| Supply Voltage (VCC) | 15 V typical |
| Bootstrap Supply (VB) | up to 500 V + 15 V |
| Under-Voltage Lockout (UVLO) | Yes (VCC and VBS) |
| Logic Input Voltage (HIN/LIN) | 3.3 V / 5 V compatible |
| Fault Output | Yes (active-low FAULT pin) |
| Betriebstemperaturbereich | -40C to +125C (TJ) |
| Gehäuse | 31-PQFN 8x9 mm (also called QFN 8x9, isolated) |
| Isolation Voltage | 1500 Vrms (per package, functional isolation) |
| Montageart | Surface Mount |
| MSL-Level | 3 |
| RoHS-Status | Compliant |
IRSM808-105MH 31-pqfn 8x9 mm (also called qfn 8x9, isolated) Pinbelegungsleitfaden
Pinbelegung für IRSM808-105MH (31-pqfn 8x9 mm (also called qfn 8x9, isolated)-Gehäuse). Dieses Leistungsbauteil verfügt über Gate-, Drain- und Source-Anschlüsse. Bei nicht gepolten Gehäusen entnehmen Sie die genaue Ausrichtung von Pin 1 und Footprint-Details dem Herstellerdatenblatt. Typische Anwendungen sind Netzteilentwurf, Motoransteuerung und Lastschaltung.
Keine detaillierten Pinbelegungsdaten verfügbar für IRSM808-105MH.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
IRSM808-105MH ist geeignet für 6 Anwendungs: Refrigerator Compressor Inverter, Energy-Efficient Fan and Pump Drives, Washing Machine Drain and Circulation Pumps, Dishwasher Circulation Pump Inverter, Small HVAC Blower Motor Drive, Three-Phase BLDC Motor Inverter (Three Modules).
Refrigerator Compressor Inverter
The IRSM808-105MH directly drives variable-speed refrigerator compressor motors in single-phase inverter topologies. Its 500 V blocking voltage provides ample margin over the rectified 220 Vac DC bus (peak ~310 V), the 10 A continuous current handles compressor inrush and steady-state loads, and the integrated HVIC gate driver eliminates the discrete bootstrap-diode complexity. The PQFN 8x9 mm footprint fits into slim inverter board layouts inside compressor housings, while the integrated dead-time generation prevents shoot-through at the typical 5-20 kHz switching frequencies used in modern energy-efficient refrigerator compressors.
Empfohlen
Energy-Efficient Fan and Pump Drives
The IRSM808-105MH is purpose-built for small-appliance energy-efficient fans and circulating pumps where the CIPOS Nano integration shrinks the inverter section to a single PQFN 8x9 mm device. Two modules provide a full H-bridge for single-phase BLDC motors, while the 0.8 ohm RDS(on) keeps conduction losses low at typical fan current levels (1-3 A). Integrated UVLO on both VCC and bootstrap supplies protects against low-battery or weak-startup conditions, and the active-low FAULT output simplifies MCU diagnostics for overcurrent or thermal events.
Empfohlen
Washing Machine Drain and Circulation Pumps
In washing-machine drain pumps and circulation pumps, the IRSM808-105MH drives the universal or BLDC motor from a rectified mains DC bus. The 500 V rating tolerates wide mains fluctuation, and the 10 A continuous current supports pump inrush surges. According to the Infineon CIPOS Nano family documentation, the module's exposed thermal pad and integrated FREDFET technology eliminate the need for an external heatsink in pump applications up to 200 W, reducing BOM cost and assembly time versus discrete half-bridge designs with separate HVIC drivers.
Empfohlen
Dishwasher Circulation Pump Inverter
The IRSM808-105MH drives dishwasher circulation pumps in a compact half-bridge inverter stage. Its PQFN 8x9 mm footprint allows placement inside the pump housing or on a small inverter PCB adjacent to the motor, and the integrated HVIC handles level shifting to the high-side FREDFET without external bootstrap components beyond a simple capacitor and diode. The 0.8 ohm RDS(on) and 10 A rating comfortably cover dishwasher pump loads, and the IPM's built-in dead-time generation simplifies firmware development versus discrete designs.
Empfohlen
Small HVAC Blower Motor Drive
For small HVAC blower motors in residential air-handlers and fan-coil units, the IRSM808-105MH provides a half-bridge inverter leg for variable-speed control of single-phase BLDC or AC motors. The 500 V rating handles 220 Vac rectified bus, the 10 A current covers typical blower loads up to 200 W, and the integrated HVIC provides noise-immune gate drive in the electrically noisy HVAC environment. The PQFN 8x9 mm package enables slim board designs that fit inside blower housings, and the module's -40 C to +125 C junction temperature range supports unconditioned attic or basement installations.
Empfohlen
Three-Phase BLDC Motor Inverter (Three Modules)
Three IRSM808-105MH modules combine into a full three-phase BLDC or PMSM motor inverter, with each module providing one half-bridge leg (high-side + low-side FREDFET + HVIC). The integrated dead-time generation per leg eliminates shoot-through across all three phases, and the matched parametric performance between modules ensures balanced phase currents. According to the Infineon datasheet, this modular three-phase approach scales power from small appliance (3x 200 W = 600 W total) without the design complexity of a monolithic 3-phase IPM, and the modules share the same PQFN 8x9 mm footprint for uniform PCB layout.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für IRSM808-105MH – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | IRSM808-105MHTR | IRSM807-105MH | IRSM808-105MHTRPBF |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | 31-PQFN 8x9 mm | 31-PQFN 8x9 mm - same | 31-PQFN 8x9 mm - same | 31-PQFN 8x9 mm - same |
| Drain-Source Voltage (VDS max) | 500 V | 500 V | 500 V | 500 V |
| Continuous Drain Current | 10 A | 10 A | 10 A | 10 A |
| RDS(on) max | 0.8 ohm | 0.8 ohm | 0.8 ohm | 0.8 ohm |
| Maximum Switching Power | 200 W | 200 W | 200 W | 200 W |
| Dead-Time Control | External DT pin (programmable) | External DT pin (programmable) | Fixed internal dead-time | External DT pin (programmable) |
| Fault Output | Yes (active-low) | Yes (active-low) | Yes (active-low) | Yes (active-low) |
| Price (qty 1, USD) | $4.19 | ~$4.19 | ~$3.90 | ~$4.19 |
Wichtigste Unterscheidungsmerkmale
- Programmable dead-time pin for application-specific tuning (vs. IRSM807-105MH)
- 60% PCB footprint reduction vs discrete 3-phase motor inverter (vs. Discrete MOSFET + HVIC design)
- Isolated package with 1500 Vrms functional isolation (vs. Non-isolated discrete MOSFET drivers)
Designhinweise
Estimated: At 200 W switching power with 50% duty cycle and 0.8 ohm RDS(on), the IRSM808-105MH dissipates approximately 2-4 W of conduction loss per switch in worst-case conditions. With the PQFN 8x9 mm exposed thermal pad soldered to a PCB copper pour of at least 1 square inch (per Infineon datasheet guidance), the junction-to-ambient thermal resistance is typically 30-40 C/W, giving a junction temperature rise of 60-120 C above ambient. For continuous operation above 3-4 W dissipation per module, add a small heatsink or expand the copper pour area.
Place the bootstrap capacitor (typically 1 uF X7R ceramic) as close as possible to the VB and VS pins of the IRSM808-105MH to minimize parasitic inductance in the high-side gate-drive loop. Use wide PCB traces or copper pours on the power-side (P+, P-, HIN, LIN returns) and keep the logic-side traces short and away from the switching-node dV/dt edges. The exposed thermal pad must be soldered to a continuous ground/power copper plane for both thermal dissipation and mechanical reliability. According to Infineon application guidance, a 4-layer board with a dedicated ground plane is strongly recommended for 500 V switching designs.
Do not exceed the maximum VDS of 500 V - the IRSM808-105MH does NOT include an active bootstrap voltage clamp, so ensure the rectified DC bus voltage plus bootstrap voltage stays below 500 V at all times, including during AC-mains surge transients. Add an external TVS diode or snubber across the P+ and P- terminals if the application is exposed to voltage transients. The DT pin (pin 6) requires specific handling per the Infineon community guidance - do not leave it floating; refer to the datasheet's dead-time configuration section for the correct external resistor or voltage value.
Estimated: The bootstrap supply (VBS) for the high-side gate driver must be recharged every switching cycle via the integrated bootstrap structure. Choose a bootstrap capacitor value using the formula C_BS >= Q_G / delta_V_BS, where Q_G is the total gate charge of the high-side FREDFET and delta_V_BS is the allowed bootstrap voltage droop (typically 0.5-1 V). For 0.8 ohm FREDFETs in this family, Q_G is typically 10-20 nC, so a 1 uF X7R ceramic capacitor provides comfortable margin. Add a small bootstrap resistor (10-22 ohm) in series with the bootstrap diode to limit peak charge current and reduce EMI.
Compliance-Informationen
RoHS compliant and lead-free per Infineon product page. MSL Level 3 moisture sensitivity rating. Halogen-free status not explicitly listed in verified web data - marked unknown. Not AEC-Q100 qualified - this is a consumer/industrial appliance IPM, not an automotive part.
