K4A4G165WG-BCWE - 4Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
Teilenummer: K4A4G165WG-BCWE ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $23.15 | $23,15 |
| 10 | $21.5 | $215,00 |
| 100 | $19.8 | $1.980,00 |
| 500 | $18.2 | $9.100,00 |
| 1.000 | $16.9 | $16.900,00 |
K4A4G165WG-BCWE Übersicht
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the DDR DRAM family, a volatile memory technology that stores data in capacitor-based cells refreshed by a memory controller. In the system memory hierarchy, DDR4 sits as the main working memory between the CPU and mass storage, delivering high bandwidth at low power. Compared with DDR3, DDR4 lowers operating voltage from 1.5V to 1.2V, doubles bank groups to eight for improved access parallelism, and raises data rates up to 3200 Mbps, cutting memory subsystem power by roughly 25% per Samsung's DDR4 portfolio data.
Key features of the K4A4G165WG-BCWE include its 4Gbit density in a x16 organization that suits processors without 64-bit controllers, DDR4-3200 speed grade operation, and the compact 96-ball FBGA surface-mount package for space-constrained boards. The commercial operating range of 0C to +85C covers typical desktop, consumer, networking, and embedded industrial environments.
Technically, the device implements DDR4 core features such as bank group architecture, on-die termination (ODT), and data mask/data strobe signaling for reliable high-speed transfers. The 1.2V supply and dynamic power management features reduce standby and active power versus previous generations, which matters in always-on and thermally limited designs.
Typical applications include embedded computing main memory, industrial control and networking equipment, set-top boxes and smart TVs, and server/PC memory modules where a x16 DDR4 component with 4Gbit capacity is required.
Design consideration: DDR4 signal integrity demands length-matched, impedance-controlled routing for DQ/DM/DQS groups and proper VDDQ decoupling; consult Samsung's DDR4 design guide for fly-by command/address topology.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in-Alternativen für K4A4G165WG-BCWE – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit K4A4G165WG-BCWE (gleiche Bauform und Footprint) – abweichend in Package, Memory Type, Memory Size, Clock Frequency, Organization.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
K4A4G165WF-BCWE
✓ Auf Lager
$10.65 / Stück
Datenblatt ansehen →K4A8G165WG-BCWE
✓ Auf Lager
$29.5313 / Stück
Datenblatt ansehen →K4A4G165WE-BCWE
📋 Referenzalternative (nicht im Katalog)
K4A4G165WE-BCRC
📋 Referenzalternative (nicht im Katalog)
K4A4G165WG-BCWE Grenzwerte & elektrische Eigenschaften
| Speichertyp | DDR4 SDRAM (volatile DRAM) |
| Speichergröße | 4 Gbit |
| Memory Organization | 256M x 16 |
| Schnittstelle | Parallel |
| Datenrate | 3200 Mbps |
| Access Time | 19 ns |
| Versorgungsspannung | 1.2 V |
| Betriebstemperatur | 0C to +85C |
| Gehäuse | FBGA-96 |
| Montageart | Surface Mount |
| Memory Format | DRAM |
| Technology | DDR4 |
| Product Status | Active |
| RoHS-Status | Compliant (per JLCPCB listing) |
K4A4G165WG-BCWE fbga-96 Pinbelegungsleitfaden
Pinbelegung für K4A4G165WG-BCWE (fbga-96-Gehäuse). Dieser digitale IC umfasst GPIO, Kommunikationsschnittstellen (UART, SPI, I2C) und Versorgungspins. Alternative Pin-Funktionen und Konfigurationsoptionen entnehmen Sie dem Herstellerdatenblatt. Unverzichtbar für Embedded-System-Design und PCB-Layout.
Keine detaillierten Pinbelegungsdaten verfügbar für K4A4G165WG-BCWE.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
K4A4G165WG-BCWE ist geeignet für 6 Anwendungs: Embedded Computing Main Memory, Networking and Communication Equipment, Consumer Set-Top Boxes and Smart TVs, Industrial Control and Automation, PC and Workstation Memory Modules, Automotive Infotainment and Display Units.
Embedded Computing Main Memory
The K4A4G165WG-BCWE provides 4Gbit of DDR4-3200 main memory for embedded x86 and ARM platforms whose controllers support x16 DDR4. Its 256M x 16 organization pairs naturally with SoCs that expose a 16-bit or 32-bit memory bus, and the 1.2V supply keeps memory power within the typical 5-15W budget of fanless industrial PCs. Placed as one or two FBGA-96 components directly on the COM module with fly-by or 1N command/address topology and on-die termination enabled, it delivers up to 3200 MT/s per pin. At 19 ns access time and 8-bank-group architecture, it sustains the bandwidth needed for Linux/RTOS workloads while consuming roughly 25% less power than equivalent DDR3 designs.
Empfohlen
Networking and Communication Equipment
Enterprise switches, routers, and 5G small-cell equipment rely on DDR4 buffers for packet processing and table lookups. The K4A4G165WG-BCWE's 3200 Mbps data rate and 19 ns access time supply the read/write bandwidth that network processors require for line-rate forwarding, while the x16 organization simplifies 16-bit or 32-bit bus designs common in NPUs and FPGAs. Mounted in FBGA-96 directly on the data plane PCB with impedance-controlled DQ/DQS routing and per-byte data mask, the device supports sustained streaming under 0C to +85C ambient conditions typical of telecom closets. Its 1.2V operation reduces thermal load in convection-cooled chassis where airflow is constrained.
Empfohlen
Consumer Set-Top Boxes and Smart TVs
Set-top boxes, smart TVs, and streaming media players need multi-gigabit DDR4 for video decode frame buffers, and the K4A4G165WG-BCWE fits this role with its 4Gbit capacity and DDR4-3200 bandwidth. The x16 organization matches the 16-bit or 32-bit memory controllers of mainstream TV SoCs, and the compact FBGA-96 package allows dense placement near the SoC for short, matched traces at 3200 Mbps. The 1.2V rail minimizes standby power - important for devices that must meet regional energy-efficiency limits in standby and low-power modes. Commercial 0C to +85C temperature rating covers typical living-room and entertainment-center thermal environments with margin.
Empfohlen
Industrial Control and Automation
PLCs, motion controllers, and machine-vision systems use DDR4 DRAM for runtime data logging, image ring buffers, and controller firmware execution. The K4A4G165WG-BCWE's industrial-relevant 0C to +85C range and RoHS-compliant FBGA-96 package suit control cabinets and vision compute modules. With DDR4-3200 bandwidth, machine-vision pipelines can sustain multi-camera frame buffering at 19 ns access granularity, while the 256M x 16 organization supports redundant dual-component configurations for fail-operational designs. Designers should pair the device with Samsung's DDR4 design guide recommendations for VDDQ decoupling and length-matched DQ groups to guarantee timing margin across the temperature range.
Empfohlen
PC and Workstation Memory Modules
The K4A4G165WG-BCWE is a component-level DDR4 die used on UDIMM and SODIMM modules where 16-bit chips are stacked in pairs to form 64-bit channels. Its DDR4-3200 speed grade aligns with mainstream desktop and workstation JEDEC profiles, and 8 chips of 4Gb each populate a 4GB module. On-module, the FBGA-96 parts sit on fly-by command/address routing with on-die termination handling signal integrity at 3200 MT/s. The 1.2V VDD keeps a populated dual-channel system within standard memory power envelopes, and the 19 ns access time supports the low random latencies expected in desktop computing workloads.
Empfohlen
Automotive Infotainment and Display Units
Within the -limited commercial 0C to +85C envelope, the K4A4G165WG-BCWE can serve automotive-adjacent displays such as aftermarket head units and passenger infotainment screens where cabin temperatures are regulated. Its DDR4-3200 bandwidth supports 1080p and entry-4K graphics frame buffers, and the x16 organization matches common infotainment SoC memory interfaces. The FBGA-96 package withstands the vibration profile of dash-mounted electronics, and the 1.2V rail integrates cleanly with the 1.2V VDDQ domains derived from automotive 5V/3.3V point-of-load regulators. Note: this part is not AEC-Q100 qualified, so it is unsuitable under-hood or safety-critical deployments.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für K4A4G165WG-BCWE – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | K4A4G165WE-BCWE | K4A4G165WF-BCWE | K4A4G165WE-BCRC | K4A8G165WG-BCWE |
|---|---|---|---|---|---|
| Package | FBGA-96 | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Size | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 8 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 512M x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| RoHS | Compliant | Compliant (Samsung DDR4 portfolio) | Compliant (Samsung DDR4 portfolio) | Compliant (Samsung DDR4 portfolio) | Compliant (Samsung DDR4 portfolio) |
Wichtigste Unterscheidungsmerkmale
- DDR4-3200 speed bin on the G-suffix die (vs. K4A4G165WE-BCRC)
- Low 1.2V DDR4 operation (vs. K4S510432D-UC75 (SDR SDRAM))
- x16 organization simplifies narrow controllers (vs. x8/x32 DDR4 components)
Designhinweise
At DDR4-3200, DQ/DQS/DM trace length mismatch within each byte lane should be kept within JEDEC-recommended DDR4 skew budgets (typically a few mils on-shelf for FR-4 at 3200 MT/s); route as tightly coupled 50-ohm single-ended / 100-ohm differential pairs over a solid reference plane. Use on-die termination (ODT) settings from the Samsung datasheet speed-bin tables and enable dynamic ODT for write bursts. Avoid referencing DQ traces across plane splits, which causes impedance discontinuities at 1.6 GHz Nyquist for DDR4-3200.
The K4A4G165WG-BCWE requires a 1.2V VDD/VDDQ rail with tight tolerance (per Samsung DDR4 datasheet, typically +/- 3%). Decouple with a network of 0.1uF and 1uF ceramics at every FBGA power ball cluster plus bulk capacitance near the regulator; DDR4 simultaneous switching currents create di/dt events that collapse under-provisioned rails. Follow Samsung's DDR4 power application guidance for VPP (2.5V) and VTT termination rail design with a dedicated termination regulator.
Verify controller density support before substituting: the 8Gb K4A8G165WG-BCWE is ballout-compatible but will not initialize on controllers limited to 4Gb row addressing. Also confirm the speed bin suffix (BCWE = 3200 class, BCRC = 2666 class) matches the firmware's SPD/timing table - running a 2666 bin at 3200 causes training failures. ZQ calibration resistor placement (240 ohm 1% to VSS) per Samsung layout guide is mandatory and frequently missed in first spins.
Compliance-Informationen
RoHS compliance per JLCPCB part listing C49260570. REACH, halogen-free, and conflict-minerals declarations not found in retrieved data; consult Samsung compliance documentation.
