LM74700-Q1 - 65V AEC-Q100 Ideal Diode Controller | TI
Teilenummer: LM74700-Q1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0.95 | $0,95 |
| 10 | $0.85 | $8,50 |
| 100 | $0.69 | $69,00 |
| 500 | $0.58 | $290,00 |
| 1.000 | $0.49 | $490,00 |
LM74700-Q1 Übersicht
An ideal diode controller is a power management IC that drives a MOSFET to emulate a diode with near-zero conduction loss. Instead of dissipating P = I x Vf watts in a Schottky diode (typically 0.4-0.7 V of forward drop), the controller servos the MOSFET gate to regulate the forward drop at roughly 20 mV, cutting conduction losses by more than an order of magnitude in battery-feed paths. Ideal diode controllers sit within the broader hierarchy of power-path protection ICs, alongside ORing controllers, hot-swap controllers, and reverse-polarity protection devices.
Key features include a wide supply input range of 3.2 V to 65 V, an ultra-low operating quiescent current of 80 uA, and a shutdown current of approximately 1 uA when the enable pin is pulled low. The 65 V rating simplifies compliance with automotive ISO 7637 load-dump and transient requirements, while the 3.2 V floor supports severe cold-crank conditions in 12 V automotive battery systems.
The controller integrates a charge pump that provides gate drive for the external N-channel MOSFET, allowing fast turn-on and low on-resistance operation. Internal regulation loop control holds the anode-to-cathode forward drop at 20 mV, emulating an ideal rectifier for ORing and reverse-battery blocking. Because the MOSFET conducts in either direction when enhanced, the controller must be placed appropriately for blocking topologies as described in the manufacturer datasheet.
Typical applications include automotive reverse battery protection for ECUs and body electronics modules, N+1 redundant power supply ORing, industrial 24 V and 48 V rail protection, and cold-crank-tolerant front-end protection for infotainment and ADAS systems.
A key design consideration: the enable pin allows the controller to be fully disabled, drawing roughly 1 uA, which is valuable in always-connected automotive systems where quiescent drain is tightly budgeted.
This page synthesizes verified datasheet parameters, distributor listings, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Drop-in-Alternativen für LM74700-Q1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
LM74700QDBVRQ1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
LM74700-EP
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
LM74700QDRQ1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
LM74700-Q1 Grenzwerte & elektrische Eigenschaften
| Funktion | Ideal diode controller (reverse battery protection) |
| Eingangsspannungsbereich | 3.2 V to 65 V |
| Forward Voltage Regulation | 20 mV |
| Operating Quiescent Current | 80 uA |
| Abschaltstrom | approx. 1 uA (EN low) |
| External MOSFET | N-channel |
| Gate Drive | Internal charge pump |
| Qualification | AEC-Q100 (automotive) |
| Transient Immunity | Supports ISO 7637 protection designs |
| Gehäuse | SOT-23-6 (DBV) |
| Montageart | Surface Mount |
| Enable-Pin | Yes (EN low = off, approx. 1 uA) |
| Orderable MPN (SOT-23-6) | LM74700QDBVRQ1 |
| Orderable MPN (SOIC-8) | LM74700QDRQ1 |
LM74700-Q1 sot-23-6 (dbv) Pinbelegungsleitfaden
Pinbelegung für LM74700-Q1 (sot-23-6 (dbv)-Gehäuse). Dieses Leistungsbauteil verfügt über Gate-, Drain- und Source-Anschlüsse. Bei nicht gepolten Gehäusen entnehmen Sie die genaue Ausrichtung von Pin 1 und Footprint-Details dem Herstellerdatenblatt. Typische Anwendungen sind Netzteilentwurf, Motoransteuerung und Lastschaltung.
Keine detaillierten Pinbelegungsdaten verfügbar für LM74700-Q1.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
LM74700-Q1 ist geeignet für 6 Anwendungs: Automotive Reverse Battery Protection, N+1 Redundant Power Supply ORing, Industrial 24 V Rail Protection, 48 V Mild-Hybrid and Telecom Front Ends, Battery-Backup Ride-Through Circuits, ADAS and Infotainment Cold-Crank Front Ends.
Automotive Reverse Battery Protection
The primary application for the LM74700-Q1 is reverse battery protection in 12 V automotive systems such as ECUs, body control modules, lighting drivers, and infotainment front ends. The 65 V input rating absorbs load-dump and ISO 7637 pulse energy headroom that would destroy lower-voltage controllers, while the external N-channel MOSFET regulated at a 20 mV forward drop replaces a power Schottky diode, cutting conduction loss by more than 20x at typical 5-10 A feed currents. The 3.2 V floor sustains operation during severe cold crank, and the enable pin allows approximately 1 uA key-off drain. Place the controller in the main battery feed ahead of downstream DC-DC converters, sized so the MOSFET RDS(on) x I^2 dissipation fits the module thermal budget.
Empfohlen
N+1 Redundant Power Supply ORing
In redundant power architectures, multiple supplies feed a common bus through ideal diodes so a failed or sagging unit is automatically isolated. The LM74700-Q1's 20 mV regulated drop minimizes bus voltage sag and power loss compared with ORing Schottky diodes, and its fast charge-pump gate control limits reverse-current transient events when a supply fails. With 80 uA quiescent current, the ORing controller overhead is negligible even in always-on telecom or server front ends, and the 65 V rating covers 12 V, 24 V, and 48 V intermediate bus architectures. Multiple LM74700-Q1 channels can be paralleled at the output, each with its own MOSFET, enabling scalable current sharing without additional sequencing logic.
Empfohlen
Industrial 24 V Rail Protection
Industrial 24 V control panels, PLC I/O modules, and sensor hubs frequently experience reversed wiring during installation or maintenance. An LM74700-Q1 with an appropriately rated N-channel MOSFET provides self-recovering reverse polarity protection: when the rail is reversed, the MOSFET blocks, and when correct polarity returns, the charge pump re-enhances the FET within microseconds. The 65 V ceiling accommodates 24 V systems with surge margin, and the 3.2 V minimum supports brown-out ride-through. Compared with a series bridge rectifier, the single-FET topology halves the conduction loss and eliminates the negative-rail artifacts of a two-diode bridge, simplifying EMC filter design downstream of the protection stage.
Empfohlen
48 V Mild-Hybrid and Telecom Front Ends
The 65 V maximum input makes the LM74700-Q1 usable as the front-end ideal diode for 48 V rails found in mild-hybrid automotive subsystems, PoE middleware, and -48 V telecom plants (with appropriate polarity topology). In these rails, conduction loss at tens of amps is the dominant thermal constraint, so reducing the forward drop from roughly 0.5 V to 20 mV saves tens of watts per path. The 80 uA quiescent current suits standby-sensitive telecom rectifier cards, and AEC-Q100 qualification means the same design element can serve both automotive 48 V zonal architectures and industrial telecom hardware without requalification of the protection IC itself.
Empfohlen
Battery-Backup Ride-Through Circuits
In systems that must ride through supply interruptions, an ideal diode between the primary supply and backup battery or supercapacitor bank prevents back-feeding while presenting minimal loss during discharge. The LM74700-Q1's approximately 1 uA shutdown current via the enable pin allows a microcontroller to disconnect the backup path almost completely during storage or transport, preserving battery state of charge. The 20 mV regulation keeps voltage drop across the diode path negligible even at multi-amp backup discharge rates, which extends usable runtime versus a Schottky solution. The 3.2 V minimum operating level is compatible with 12 V lead-acid backup batteries during deep discharge events.
Empfohlen
ADAS and Infotainment Cold-Crank Front Ends
ADAS camera/radar modules and automotive infotainment head units must survive ISO 7637 transients and keep running through cold crank, where the battery rail sags to 3-6 V. The LM74700-Q1 is explicitly characterized for this regime: the 3.2 V input floor maintains gate drive during severe cold crank, the 65 V rating absorbs jump-start and load-dump events, and the 20 mV forward drop minimizes the voltage headroom consumed ahead of downstream buck converters, preserving regulator dropout margin precisely when the rail is lowest. Combining this controller with a downstream wide-Vin buck creates a compact, self-protected power front end with no electrolytic diode thermal penalty.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für LM74700-Q1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | LM74700QDBVRQ1 | LM74700-EP | LM74700QDRQ1 |
|---|---|---|---|---|
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Package | SOT-23-6 (DBV) | SOT-23-6 (DBV) - same | SOT-23-6 (DBV) - same | SOIC-8 (D) |
| Input Voltage Range | 3.2 V to 65 V | 3.2 V to 65 V | 3.2 V to 65 V | 3.2 V to 65 V |
| Forward Regulation | 20 mV | 20 mV | 20 mV | 20 mV |
| Quiescent Current | 80 uA | 80 uA | 80 uA | 80 uA |
| Shutdown Current | approx. 1 uA | approx. 1 uA | approx. 1 uA | approx. 1 uA |
| Qualification | AEC-Q100 | AEC-Q100 | Enhanced product (space-grade heritage, non-Q1) | AEC-Q100 |
Wichtigste Unterscheidungsmerkmale
- Lowest-input-voltage cold crank support in TI ideal diode portfolio (vs. LM5050-1)
- 65 V transient headroom simplifies ISO 7637 designs (vs. LM5050-2)
- Ultra-low key-off drain via enable pin (vs. LM74700QDRQ1 (same die, D package))
Designhinweise
Size the external N-channel MOSFET by conduction loss, not voltage rating alone: dissipation is I_load^2 x RDS(on) plus switching of the 20 mV regulation loop. Estimated: a 10 A feed with a 5 mOhm FET dissipates about 0.5 W, which is fine in a mid-size package with 1 oz copper, whereas a 20 A feed needs <2.5 mOhm or paralleled FETs. Confirm the MOSFET VGS rating against the charge pump clamp level specified in the TI datasheet before selecting devices.
Keep the ANODE-CATHODE sense path Kelvin-connected at the MOSFET source and drain pads so the 20 mV regulation loop senses only the FET drop, not PCB trace resistance; trace milliohms will force the controller into deep gate enhancement and slow reverse-blocking response. Place the input TVS for ISO 7637 pulses upstream of the controller, and follow the TI datasheet layout section for charge-pump capacitor placement to keep gate-drive loops short.
Do not assume the DBV (SOT-23-6) and D (SOIC-8) package options are pin-identical - verify the datasheet pin configuration for your exact orderable MPN before layout capture. Also remember the ideal diode MOSFET conducts in both directions while enhanced, so for reverse blocking the controller must be oriented per the datasheet application circuit; using it as a load switch without reviewing the topology can defeat reverse polarity protection entirely.
Compliance-Informationen
AEC-Q100 automotive qualification is explicitly stated in the TI datasheet abstract. RoHS/REACH/lead-free status was not present in the captured web data - verify on the TI product page.
