MRF6S19200HR5 - 56W RF Power LDMOS 1.93-1.99GHz | NXP
Teilenummer: MRF6S19200HR5 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $122.11 | $122,11 |
| 10 | $115.5 | $1.155,00 |
| 100 | $105.2 | $10.520,00 |
| 500 | $96.4 | $48.200,00 |
| 1.000 | $89.75 | $89.750,00 |
MRF6S19200HR5 Übersicht
An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is a specialized MOSFET variant optimized for high-frequency, high-power amplification. LDMOS technology dominates base-station and broadcast RF applications because it offers an excellent trade-off among gain, efficiency, ruggedness, and cost. Within the broader semiconductor taxonomy, the LDMOS sits as a subclass of power MOSFETs, itself a category of discrete semiconductors designed for switching or amplification of high-power signals. The MRF6S19200HR5 belongs to NXP's MRF6S series, a long-standing family of LDMOS devices aimed at sub-3 GHz infrastructure.
Key features include 17.9 dB typical gain at 1.96 GHz, 56 W CW output power capability, internal input matching for broadband performance, and a high breakdown voltage of 66 V that provides strong margin against load VSWR mismatches. The NI-780H-2L package features a ceramic body with a flange-mount flange and gold metallization for thermal dissipation and reliability under continuous RF drive.
The MRF6S19200HR5 uses NXP's 6th-generation LDMOS process, which integrates electrostatic discharge (ESD) protection and provides excellent thermal conductivity through the ceramic flange. The device's internal matching simplifies PCB-level implementation by reducing external component count, while the 28 V supply rail aligns with standard telecom power architectures.
Typical applications include CDMA2000 and 1xEV-DO base-station power amplifiers, GSM/EDGE multicarrier linear amplifiers, and industrial RF heating transmitters operating in the 1.93-1.99 GHz band. It is also well-suited for repeater and femtocell final-stage power amplification.
When designing with this part, ensure the heatsink provides a thermal resistance below 0.5 C/W to maintain junction temperature within safe limits at full 56 W RF output. Use a drain-supply RF choke with low DC resistance to minimize DC power loss, and strictly observe the maximum 66 V drain voltage rating to prevent avalanche breakdown.
This page consolidates distributor pricing, same-package drop-in alternatives, and design considerations not presented in the manufacturer datasheet to accelerate RF power-stage selection.
Drop-in-Alternativen für MRF6S19200HR5 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit MRF6S19200HR5 (gleiche Bauform und Footprint) – abweichend in Mounting Type, Technology, Transistor Type, Lead Free Status, Operating Mode.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MRFE6S9160HR3
✅ Drop-In✓ Auf Lager
$25.2 / Stück
Datenblatt ansehen →MRFE6S9125NBR1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRFE6S9200HR3
✅ Drop-In✓ Auf Lager
$52.3 / Stück
Datenblatt ansehen →MRF6S19100HR5
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF6S18060HR5
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF6S19200HR5 Grenzwerte & elektrische Eigenschaften
| Transistortyp | LDMOS |
| Technology | RF Power MOSFET |
| Drain-Source Voltage (Vds) Max | 66 V |
| Test Voltage (Vds) | 28 V |
| Test Current (Ids) | 1.6 A |
| Frequency Range | 1.93 GHz to 1.99 GHz |
| Power Gain (Typ) | 17.9 dB |
| Output Power (Pout) | 56 W (CW) |
| Gehäuse | NI-780H-2L (ceramic flange) |
| Montageart | Flange / Screw Mount |
| Operating Mode | Class AB, Class C |
| Application | CDMA base station, multicarrier amplifiers |
| Input Matching | Internal (broadband) |
| Lead Free Status | Yes |
| RoHS-Status | Compliant |
MRF6S19200HR5 Pin-Konfiguration
| Pin 1 | GATE — RF input / gate bias |
| Pin 2 | DRAIN — RF output / drain supply (28 V typical) |
| Pin 3 | SOURCE — Source / ground (flange) |
Sicherer Arbeitsbereich
Typische Anwendungen
MRF6S19200HR5 ist geeignet für 6 Anwendungs: CDMA2000 Base-Station Final-Stage PA, GSM/EDGE Multicarrier Linear Amplifier, Cellular Repeater / Femtocell Final Stage, Industrial RF Heating Transmitter, PCS Band Driver Amplifier, Aerospace / Defense RF Power Module.
CDMA2000 Base-Station Final-Stage PA
The MRF6S19200HR5's 56 W CW output and 17.9 dB gain at 1.93-1.99 GHz make it a direct fit for CDMA2000 and 1xEV-DO base-station final amplifier stages. Placed at the antenna feed path, it provides the linear RF drive required for the PCS downlink band; internal matching simplifies the output network while Class AB bias yields the linearity needed for CDMA signal quality. Compared to a discrete BJT solution, this LDMOS delivers higher gain per stage and integrated ESD robustness for field-deployed cellular hardware. The 66 V drain rating provides adequate margin against load VSWR mismatch transients encountered in real-world tower installations.
Empfohlen
GSM/EDGE Multicarrier Linear Amplifier
The MRF6S19200HR5 supports Class AB and Class C operation modes, both of which are useful in GSM/EDGE multicarrier linear amplifier designs targeting 1.9 GHz. Its 56 W CW rating allows combining multiple carriers while preserving linearity when biased appropriately; the ceramic NI-780 flange enables direct screw-mount to a chassis heatsink for sustained multicarrier drive. The internal broadband input matching eliminates the need for a discrete input matching network, reducing BOM count and simplifying the RF front-end. Designers should target 28 V drain bias and bias the gate for approximately 1.6 A quiescent current to achieve specified gain and efficiency.
Empfohlen
Cellular Repeater / Femtocell Final Stage
For cellular repeaters and femtocell final-stage power amplification, the MRF6S19200HR5 delivers the 56 W class of output power that lets small-cell and repeater equipment compensate for path loss in dense urban deployments. Operating at 1.93-1.99 GHz, it covers the standard PCS downlink band used by most CDMA2000 and 1xEV-DO repeaters; the NI-780 ceramic flange supports compact mechanical integration within shielded RF enclosures. Its mature MRF6S process technology yields proven long-term reliability, important for unattended field deployments. The 17.9 dB gain reduces the number of driver stages required, lowering overall BOM cost.
Empfohlen
Industrial RF Heating Transmitter
In industrial RF heating systems operating near 1.96 GHz, the MRF6S19200HR5 serves as the final power device delivering 56 W of CW RF energy into the applicator load. Its 66 V drain breakdown withstands the high VSWR conditions typical of industrial heating chambers where the load impedance varies with material composition. The NI-780 ceramic package provides the mechanical rigidity and thermal conductivity required for continuous industrial-duty operation; flange mounting directly to a water-cooled or forced-air heatsink is standard practice. Class C bias mode maximizes DC-to-RF efficiency, reducing thermal load in continuous-process applications such as plastics welding or food processing.
Empfohlen
PCS Band Driver Amplifier
When used as a driver stage for higher-power PA lineups in the 1.93-1.99 GHz PCS band, the MRF6S19200HR5's 17.9 dB gain provides ample drive for a subsequent 100 W or 200 W final-stage LDMOS such as the MRFE6S9200HR3. The internal input matching accepts standard 50 dB baseline drive levels without external matching, and the 28 V drain supply aligns with conventional telecom 28V bus architectures. Combining two MRF6S19200HR5 in a balanced push-pull configuration can also yield over 100 W of linear output with good harmonic suppression; the symmetric NI-780 package supports mirrored PCB layouts for balanced topologies.
Empfohlen
Aerospace / Defense RF Power Module
The MRF6S19200HR5's mature LDMOS technology and rugged NI-780 ceramic package make it suitable for aerospace and defense RF power modules operating in the 1.9 GHz region. Its 66 V breakdown voltage offers headroom against transient load mismatches encountered in airborne and vehicular RF environments, while the flange-mount construction withstands vibration and mechanical shock per typical MIL-STD test profiles. The 17.9 dB gain reduces driver-stage complexity in compact RF front-ends used in tactical communications and electronic countermeasures subsystems. NXP's long-standing position as a defense LDMOS supplier provides additional assurance for programs requiring MIL-qualified semiconductor sourcing.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MRF6S19200HR5 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MRFE6S9160HR3 | MRFE6S9125NBR1 | MRFE6S9200HR3 | MRF6S19100HR5 |
|---|---|---|---|---|---|
| Package | NI-780H-2L (ceramic flange) | NI-780 (ceramic flange) - same | NI-780 (ceramic flange) - same | NI-780 (ceramic flange) - same | NI-780 (ceramic flange) - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Frequency Range | 1.93-1.99 GHz | 0.7-1.0 GHz or 1.9 GHz variant | 0.7-1.0 GHz | 0.9-0.96 GHz | 1.93-1.99 GHz |
| Output Power | 56 W CW | 160 W | 125 W | 200 W | 100 W |
| Power Gain | 17.9 dB | 17 dB (typical family) | 16.5 dB | 16 dB | 17 dB |
| Test Voltage | 28 V | 28 V | 28 V | 28 V | 28 V |
| Drain Voltage Max | 66 V | 66 V | 66 V | 66 V | 66 V |
| Generation | MRF6S family | MRFE6S (next-gen) | MRFE6S (next-gen) | MRFE6S (next-gen) | MRF6S (same family) |
Wichtigste Unterscheidungsmerkmale
- Mid-power 56 W sweet spot in MRF6S family (vs. MRF6S19100HR5)
- Mature MRF6S family with proven field reliability (vs. MRFE6S9200HR3)
- Targeted 1.93-1.99 GHz PCS band optimization (vs. MRF6S18060HR5)
Designhinweise
Estimated: at 56 W CW RF output and typical 45% drain efficiency, internal dissipation is approximately 22 W. The NI-780H-2L package has a junction-to-case thermal resistance of approximately 0.45 C/W; combined with the heatsink-to-ambient resistance this requires a heatsink rated below 0.5 C/W for continuous operation at 85 C ambient. Forced-air cooling or a water-cooled cold plate is recommended for sustained full-power operation; insufficient thermal management is the leading cause of LDMOS field failures in cellular infrastructure.
The MRF6S19200HR5 includes internal input matching but the output network must be designed on the PCB for the specific application frequency. Use a microstrip or stripline output matching network with low-loss substrate (e.g., Rogers RO4003C) for 1.9 GHz operation; keep all RF traces short and impedance-controlled at 50 dB. Place the drain RF choke (typically a quarter-wave microstrip or high-Q molded inductor) directly at the drain lead to minimize parasitic loss. The gate bias line must be heavily decoupled with a 10 uF electrolytic + 100 nF ceramic + ferrite bead network to suppress low-frequency bias noise.
Never exceed the 66 V maximum drain-source voltage rating; transient overshoots from a poorly designed drain choke can easily reach breakdown. Do not operate without proper gate sequencing (drain must never precede gate bias) or the device can experience high current stress at startup. Always include a gate-source Zener protection network (typically a 10 V Zener) to prevent ESD damage during handling and assembly; the MRF6S19200HR5 is less ESD-robust than the newer MRFE6S family.
Use a regulated +28 V DC supply with current capability of at least 3 A to support the 1.6 A quiescent current plus RF drive peaks. Add a 1000 uF bulk capacitor at the drain supply input to absorb pulsed current spikes that would otherwise modulate the supply rail and degrade linearity. The gate bias should be set to -0.5 to -1.5 V quiescent to achieve 1.6 A drain idle current (Class AB bias); use a low-noise gate supply to avoid modulating the RF signal at audio frequencies.
Compliance-Informationen
RoHS compliant per NXP product page. AEC-Q100 not applicable for RF power discrete. Lead-free per NXP datasheet marking. Halogen-free status not explicitly stated in retrieved data.