MRF6S19200HR5 vs MRFE6S9200HR3 Vergleich
Detaillierter Direktvergleich von MRF6S19200HR5 von NXP Semiconductors und MRFE6S9200HR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | MRF6S19200HR5 | MRFE6S9200HR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $89,75 | $52,30 |
| Transistortyp | LDMOS | N-Channel LDMOS (RF Power) |
| Technology | RF Power MOSFET | Enhancement-mode LDMOS (HV6E) |
| Drain-Source Voltage (Vds) Max | 66 V | — |
| Test Voltage (Vds) | 28 V | — |
| Test Current (Ids) | 1.6 A | — |
| Frequency Range | 1.93 GHz to 1.99 GHz | — |
| Power Gain (Typ) | 17.9 dB | — |
| Output Power (Pout) | 56 W (CW) | — |
| Gehäuse | NI-780H-2L (ceramic flange) | NI-880H-2L ceramic air-cavity |
| Montageart | Flange / Screw Mount | Chassis / flange mount, SMD variant 5.08 mm height |
| Operating Mode | Class AB, Class C | Class AB, Class C, Doherty |
| Application | CDMA base station, multicarrier amplifiers | — |
| Input Matching | Internal (broadband) | — |
| Lead Free Status | Yes | Lead Free (per datasheet) |
| RoHS-Status | Compliant | Compliant |
| Frequency | — | 880 MHz (test), broadband up to 1000 MHz |
| Drain-Source Voltage (Vdss) Rated | — | 66 V |
| Test Supply Voltage | — | 28 V |
| Test Quiescent Current | — | 1.4 A |
| Output Power (Avg) | — | 58 W (W-CDMA) |
| Power Gain | — | 21 dB at 880 MHz |
| Input Capacitance (Ciss) | — | 557.27 pF at 28 V |
| Target Application | — | W-CDMA base-station final stage |