MT53E512M32D1ZW-046BAUT:B - 16Gbit LPDDR4X SDRAM | Micron
Teilenummer: MT53E512M32D1ZW-046BAUT:B ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1.000 | $0 | $0,00 |
MT53E512M32D1ZW-046BAUT:B Übersicht
LPDDR4X SDRAM (Low Power Double Data Rate 4X synchronous dynamic random access memory) is a class of volatile DRAM optimized for mobile and embedded systems. Within the memory hierarchy it sits at the main-system-memory level, below CPU caches and above storage, and belongs to the broader JEDEC DDR SDRAM family. Compared with standard LPDDR4, the LPDDR4X variant lowers the I/O interface voltage (VDDQ) to approximately 0.6V, significantly reducing I/O power consumption, which is the dominant power draw at multi-gigabit data rates.
Key features of this device include the 16 Gbit (2 GB) capacity in a single 32-bit-wide component, a parallel interface clocked at 2.133 GHz, and an automotive-grade AUT suffix designation. According to Microchip USA product data, the part is AEC-Q100 qualified and operates from a supply voltage range of 1.06V to 1.17V on the core rail, supporting the low-power behavior expected of the LPDDR4X family.
Architecturally, the device is organized as 512M x 32 with internal banks accessed through a double-data-rate interface, allowing commands and data to be transferred on both clock edges for an effective 4266 MT/s class data rate. Deep power-down, self-refresh, and partial-array self-refresh style power management modes typical of Micron's MT53E mobile DRAM family minimize standby current in battery-operated systems.
Typical applications include automotive infotainment and advanced driver assistance (ADAS) platforms, where AEC-Q100 qualification is mandatory, as well as high-performance embedded computing, industrial gateways, and networking equipment requiring dense DRAM in a compact footprint.
A key design consideration is signal integrity: at 2.133 GHz operation, trace length matching, on-die termination (ODT) configuration, and VDDQ decoupling dominate the layout effort, and the memory controller must be configured for the LPDDR4X timing tables in the manufacturer datasheet.
This page synthesizes distributor inventory data, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Drop-in-Alternativen für MT53E512M32D1ZW-046BAUT:B – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MT53E512M32D1ZW-046 AUT:B
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MT53E512M32D1ZW-046BAUT:B-TR
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MT53E512M32D1ZW-046 AUT:B-TR
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MT53E512M32D1ZW-046BIT:B
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MT53E512M32D1ZW-046BAUT:B Technische Daten
| Speichertyp | LPDDR4X SDRAM (Mobile DRAM) |
| Memory Capacity | 16 Gbit (2 GB) |
| Memory Organization | 512M x 32 |
| Schnittstelle | Parallel |
| Clock Frequency | 2.133 GHz |
| Access Time | 3.5 ns |
| Supply Voltage Range | 1.06 V to 1.17 V |
| Gehäuse | 200-TFBGA (10 mm x 14.5 mm) |
| Montageart | Surface Mount |
| Qualification | AEC-Q100 qualified (automotive grade) |
| Data Rate Class | 4266 MT/s class (double data rate at 2.133 GHz) |
| Volatile Memory | Yes (DRAM) |
| Product Family | Micron MT53E LPDDR4X |
MT53E512M32D1ZW-046BAUT:B 200-tfbga (10 mm x 14.5 mm) Pinbelegungsleitfaden
Pinbelegung für MT53E512M32D1ZW-046BAUT:B (200-tfbga (10 mm x 14.5 mm)-Gehäuse). Pin-Nummerierung, Funktionen und Anschlussdiagramme sind im Herstellerdatenblatt definiert. Entnehmen Sie diesem den genauen Footprint und Lötrichtlinien.
Keine detaillierten Pinbelegungsdaten verfügbar für MT53E512M32D1ZW-046BAUT:B.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
MT53E512M32D1ZW-046BAUT:B ist geeignet für 6 Anwendungs: Automotive Infotainment and Cockpit, ADAS Sensor Fusion Platforms, Industrial Gateways and Edge Computing, Networking and Telecom Equipment, High-Performance Embedded Computing (HPEC), Battery-Powered Portable and IoT Devices.
Automotive Infotainment and Cockpit
The MT53E512M32D1ZW-046BAUT:B fits automotive infotainment because it combines 16 Gbit (2 GB) density with AEC-Q100 qualification and the AUT automotive-grade suffix, per Microchip USA product data. Its 2.133 GHz clock and 3.5 ns access time supply the bandwidth headroom needed by HD navigation maps, 2D/3D graphics compositing, and multi-display clusters. In a typical architecture, the LPDDR4X connects to an automotive SoC on a short point-to-point 32-bit bus; the low LPDDR4X I/O voltage reduces DRAM power in always-on cockpit electronics, and the 200-TFBGA (10 x 14.5 mm) footprint allows the memory to sit close to the processor for signal integrity. Deep power-down modes preserve battery during key-off states.
Empfohlen
ADAS Sensor Fusion Platforms
Advanced driver assistance systems aggregate camera, radar, and lidar streams that must be buffered in real time; the MT53E512M32D1ZW-046BAUT:B provides 2 GB of volatile working memory with the AEC-Q100 qualification ADAS platforms demand. The 512M x 32 organization and 2.133 GHz parallel interface deliver sustained bandwidth for sensor-frame buffering and pre-processing, while the 1.06V to 1.17V core supply keeps thermal budgets in sealed ADAS enclosures manageable. Designers typically pair the memory with automotive vision processors and place it within the controller's matched-flight-time routing envelope; ODT and trace length matching per the Micron datasheet maintain margin at 4266 MT/s-class data rates across the automotive temperature environment.
Empfohlen
Industrial Gateways and Edge Computing
Industrial edge gateways running protocol conversion, local analytics, and containerized workloads need dense DRAM in constrained board space; the MT53E512M32D1ZW-046BAUT:B supplies 16 Gbit in a 10 mm x 14.5 mm 200-TFBGA footprint. Its AEC-Q100 pedigree exceeds typical industrial reliability requirements, providing derating margin for high-temperature cabinets, while the LPDDR4X low I/O voltage reduces total system power for passively cooled designs. The 2.133 GHz clock supports gigabit networking line-rate packet buffering. A common pitfall is insufficient VDDQ decoupling in four-layer industrial boards; a dense ceramic capacitor array under the ball field and strict length matching to the host SoC preserve timing margin at full data rate.
Empfohlen
Networking and Telecom Equipment
Switch, router, and base-station line cards use LPDDR4X as packet-buffer and control-plane memory, and the MT53E512M32D1ZW-046BAUT:B's 16 Gbit capacity and 2.133 GHz clock rate match the buffering requirements of multi-gigabit ports. The parallel 32-bit interface with 3.5 ns access time sustains the random-access patterns typical of queue management, and the automotive AEC-Q100 qualification provides the robustness telecom carriers expect for temperature-hardened outdoor equipment. In these designs the memory usually attaches to a network processor or switch ASIC; layout focuses on flight-time-matched routing and solid return paths for the LPDDR4X strobes. Deep power-down support also helps idle-port power reduction in energy-efficient networking designs.
Empfohlen
High-Performance Embedded Computing (HPEC)
Rugged embedded computing modules - COM Express, SMARC, and custom SBCs - benefit from the MT53E512M32D1ZW-046BAUT:B's combination of 2 GB density, 4266 MT/s-class bandwidth, and compact 200-TFBGA package. The AEC-Q100 qualification simplifies qualification paperwork for defense-aerospace-adjacent programs, and the 1.06V to 1.17V supply keeps conduction-cooled chassis thermal budgets in check. Designers should configure the host memory controller with the exact MT53E512M32D1ZW-046BAUT:B timing tables from the Micron datasheet and validate ODT settings across temperature. Where more memory is needed, the pin-compatible 32 Gbit MT53E1G32D2FW-046 family provides a density upgrade path on the same controller IP.
Empfohlen
Battery-Powered Portable and IoT Devices
Although AUT-graded, the MT53E512M32D1ZW-046BAUT:B's LPDDR4X power characteristics - low VDDQ I/O rail plus self-refresh and deep power-down modes - translate directly into longer battery runtime for handheld instruments, portable test equipment, and high-end IoT gateways. The 16 Gbit capacity supports local machine-learning inference and on-device data logging that 4 Gbit-class LPDDR parts cannot sustain. At 2.133 GHz the device meets the burst bandwidth of mobile-class SoCs, and the 3.5 ns access time keeps latency-sensitive real-time loops responsive. The main design trade-off versus consumer LPDDR4X is cost and possibly package availability; teams should confirm supply continuity for the automotive ordering code before committing portable designs to this exact MPN.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MT53E512M32D1ZW-046BAUT:B – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MT53E512M32D1ZW-046 AUT:B | MT53E512M32D1ZW-046BAUT:B-TR | MT53E512M32D1ZW-046BIT:B |
|---|---|---|---|---|
| Package | 200-TFBGA (10 x 14.5 mm) | 200-TFBGA (10 x 14.5 mm) - same | 200-TFBGA (10 x 14.5 mm) - same | 200-TFBGA (10 x 14.5 mm) - same |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Memory Type | LPDDR4X | LPDDR4X | LPDDR4X | LPDDR4 |
| Capacity | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit |
| Automotive Grade / AEC-Q100 | Yes (AUT, AEC-Q100 qualified) | Yes (AUT) | Yes (AUT, TR packaging) | No (IT industrial grade) |
Wichtigste Unterscheidungsmerkmale
- AEC-Q100 automotive qualification with AUT grade (vs. MT53E512M32D1ZW-046BIT:B)
- LPDDR4X low-voltage I/O power advantage (vs. MT53E512M32D1ZW-046BIT:B)
- Single-component 2 GB density in 10 x 14.5 mm (vs. MT53E256M32D2FW-046)
Designhinweise
At the 2.133 GHz clock (4266 MT/s class data rate), route the LPDDR4X bus as a tightly controlled point-to-point interface: match all DQ, DQS, and DM traces within the memory controller's specified intra-byte skew window, and keep every trace within the controller's maximum flight-time radius from the 200-TFBGA ball field. Use the ODT settings from the Micron datasheet timing tables and validate with an eye diagram at temperature extremes. Skipping length matching or exceeding flight-time limits is the most common cause of marginal LPDDR4X operation.
Supply the core rail within the 1.06V to 1.17V window with a regulator that meets the LPDDR4X power-up sequencing requirements in the Micron datasheet - core and I/O rail ramp order matters for latch-up avoidance. Because LPDDR4X uses a low-voltage VDDQ I/O rail, decouple with a dense array of ceramic capacitors (mix of 100 nF and 10 uF values, estimated: place at least one 100 nF per bank region) directly at the ball field. Verify actual rail tolerances and sequencing order against the manufacturer datasheet before tape-out.
Do not treat the BAUT:B and BIT:B variants as interchangeable: BAUT:B is LPDDR4X (lower VDDQ, automotive grade) while BIT:B is standard LPDDR4 in an industrial grade - controller VDDQ configuration and qualification documentation differ even though the 200-TFBGA footprint is identical. Also note the colon in the ordering code: distributors list the part as MT53E512M32D1ZW-046BAUT-B; quoting the wrong suffix format can return a different speed or temperature bin.
Compliance-Informationen
AEC-Q100 qualification stated by Microchip USA product data. RoHS/REACH/lead-free/halogen status not stated in retrieved data - verify on the Micron part-detail page.
