MT53E512M32D1ZW-046BAUT:B - 16Gbit LPDDR4X SDRAM | Micron
MPN: MT53E512M32D1ZW-046BAUT:B β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
Drop-in alternatives for MT53E512M32D1ZW-046BAUT:B β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
MT53E512M32D1ZW-046 AUT:B
β Drop-Inπ Reference alternative (not in catalog)
MT53E512M32D1ZW-046BAUT:B-TR
β Drop-Inπ Reference alternative (not in catalog)
MT53E512M32D1ZW-046 AUT:B-TR
β Drop-Inπ Reference alternative (not in catalog)
MT53E512M32D1ZW-046BIT:B
β Drop-Inπ Reference alternative (not in catalog)
MT53E512M32D1ZW-046BAUT:B Maximum Ratings & Electrical Characteristics
| Memory Type | LPDDR4X SDRAM (Mobile DRAM) |
| Memory Capacity | 16 Gbit (2 GB) |
| Memory Organization | 512M x 32 |
| Interface | Parallel |
| Clock Frequency | 2.133 GHz |
| Access Time | 3.5 ns |
| Supply Voltage Range | 1.06 V to 1.17 V |
| Package | 200-TFBGA (10 mm x 14.5 mm) |
| Mounting Type | Surface Mount |
| Qualification | AEC-Q100 qualified (automotive grade) |
| Data Rate Class | 4266 MT/s class (double data rate at 2.133 GHz) |
| Volatile Memory | Yes (DRAM) |
| Product Family | Micron MT53E LPDDR4X |
MT53E512M32D1ZW-046BAUT:B 200-tfbga (10 mm x 14.5 mm) Pin Configuration Guide
Complete pinout information for MT53E512M32D1ZW-046BAUT:B (200-tfbga (10 mm x 14.5 mm) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for MT53E512M32D1ZW-046BAUT:B.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
MT53E512M32D1ZW-046BAUT:B is suitable for 6 applications: Automotive Infotainment and Cockpit, ADAS Sensor Fusion Platforms, Industrial Gateways and Edge Computing, Networking and Telecom Equipment, High-Performance Embedded Computing (HPEC), Battery-Powered Portable and IoT Devices.
Automotive Infotainment and Cockpit
The MT53E512M32D1ZW-046BAUT:B fits automotive infotainment because it combines 16 Gbit (2 GB) density with AEC-Q100 qualification and the AUT automotive-grade suffix, per Microchip USA product data. Its 2.133 GHz clock and 3.5 ns access time supply the bandwidth headroom needed by HD navigation maps, 2D/3D graphics compositing, and multi-display clusters. In a typical architecture, the LPDDR4X connects to an automotive SoC on a short point-to-point 32-bit bus; the low LPDDR4X I/O voltage reduces DRAM power in always-on cockpit electronics, and the 200-TFBGA (10 x 14.5 mm) footprint allows the memory to sit close to the processor for signal integrity. Deep power-down modes preserve battery during key-off states.
Recommended
ADAS Sensor Fusion Platforms
Advanced driver assistance systems aggregate camera, radar, and lidar streams that must be buffered in real time; the MT53E512M32D1ZW-046BAUT:B provides 2 GB of volatile working memory with the AEC-Q100 qualification ADAS platforms demand. The 512M x 32 organization and 2.133 GHz parallel interface deliver sustained bandwidth for sensor-frame buffering and pre-processing, while the 1.06V to 1.17V core supply keeps thermal budgets in sealed ADAS enclosures manageable. Designers typically pair the memory with automotive vision processors and place it within the controller's matched-flight-time routing envelope; ODT and trace length matching per the Micron datasheet maintain margin at 4266 MT/s-class data rates across the automotive temperature environment.
Recommended
Industrial Gateways and Edge Computing
Industrial edge gateways running protocol conversion, local analytics, and containerized workloads need dense DRAM in constrained board space; the MT53E512M32D1ZW-046BAUT:B supplies 16 Gbit in a 10 mm x 14.5 mm 200-TFBGA footprint. Its AEC-Q100 pedigree exceeds typical industrial reliability requirements, providing derating margin for high-temperature cabinets, while the LPDDR4X low I/O voltage reduces total system power for passively cooled designs. The 2.133 GHz clock supports gigabit networking line-rate packet buffering. A common pitfall is insufficient VDDQ decoupling in four-layer industrial boards; a dense ceramic capacitor array under the ball field and strict length matching to the host SoC preserve timing margin at full data rate.
Recommended
Networking and Telecom Equipment
Switch, router, and base-station line cards use LPDDR4X as packet-buffer and control-plane memory, and the MT53E512M32D1ZW-046BAUT:B's 16 Gbit capacity and 2.133 GHz clock rate match the buffering requirements of multi-gigabit ports. The parallel 32-bit interface with 3.5 ns access time sustains the random-access patterns typical of queue management, and the automotive AEC-Q100 qualification provides the robustness telecom carriers expect for temperature-hardened outdoor equipment. In these designs the memory usually attaches to a network processor or switch ASIC; layout focuses on flight-time-matched routing and solid return paths for the LPDDR4X strobes. Deep power-down support also helps idle-port power reduction in energy-efficient networking designs.
Recommended
High-Performance Embedded Computing (HPEC)
Rugged embedded computing modules - COM Express, SMARC, and custom SBCs - benefit from the MT53E512M32D1ZW-046BAUT:B's combination of 2 GB density, 4266 MT/s-class bandwidth, and compact 200-TFBGA package. The AEC-Q100 qualification simplifies qualification paperwork for defense-aerospace-adjacent programs, and the 1.06V to 1.17V supply keeps conduction-cooled chassis thermal budgets in check. Designers should configure the host memory controller with the exact MT53E512M32D1ZW-046BAUT:B timing tables from the Micron datasheet and validate ODT settings across temperature. Where more memory is needed, the pin-compatible 32 Gbit MT53E1G32D2FW-046 family provides a density upgrade path on the same controller IP.
Recommended
Battery-Powered Portable and IoT Devices
Although AUT-graded, the MT53E512M32D1ZW-046BAUT:B's LPDDR4X power characteristics - low VDDQ I/O rail plus self-refresh and deep power-down modes - translate directly into longer battery runtime for handheld instruments, portable test equipment, and high-end IoT gateways. The 16 Gbit capacity supports local machine-learning inference and on-device data logging that 4 Gbit-class LPDDR parts cannot sustain. At 2.133 GHz the device meets the burst bandwidth of mobile-class SoCs, and the 3.5 ns access time keeps latency-sensitive real-time loops responsive. The main design trade-off versus consumer LPDDR4X is cost and possibly package availability; teams should confirm supply continuity for the automotive ordering code before committing portable designs to this exact MPN.
Recommended
Recommended Products Summary
Engineering reference data for MT53E512M32D1ZW-046BAUT:B β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MT53E512M32D1ZW-046 AUT:B | MT53E512M32D1ZW-046BAUT:B-TR | MT53E512M32D1ZW-046BIT:B |
|---|---|---|---|---|
| Package | 200-TFBGA (10 x 14.5 mm) | 200-TFBGA (10 x 14.5 mm) - same | 200-TFBGA (10 x 14.5 mm) - same | 200-TFBGA (10 x 14.5 mm) - same |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Memory Type | LPDDR4X | LPDDR4X | LPDDR4X | LPDDR4 |
| Capacity | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit |
| Organization | 512M x 32 | 512M x 32 | 512M x 32 | [DATA_NEEDED] |
| Clock Frequency | 2.133 GHz | 2.133 GHz | 2.133 GHz | [DATA_NEEDED] |
| Access Time | 3.5 ns | 3.5 ns | 3.5 ns | [DATA_NEEDED] |
| Automotive Grade / AEC-Q100 | Yes (AUT, AEC-Q100 qualified) | Yes (AUT) | Yes (AUT, TR packaging) | No (IT industrial grade) |
Key Differentiators
- AEC-Q100 automotive qualification with AUT grade (vs MT53E512M32D1ZW-046BIT:B)
- LPDDR4X low-voltage I/O power advantage (vs MT53E512M32D1ZW-046BIT:B)
- Single-component 2 GB density in 10 x 14.5 mm (vs MT53E256M32D2FW-046)
Design Notes
At the 2.133 GHz clock (4266 MT/s class data rate), route the LPDDR4X bus as a tightly controlled point-to-point interface: match all DQ, DQS, and DM traces within the memory controller's specified intra-byte skew window, and keep every trace within the controller's maximum flight-time radius from the 200-TFBGA ball field. Use the ODT settings from the Micron datasheet timing tables and validate with an eye diagram at temperature extremes. Skipping length matching or exceeding flight-time limits is the most common cause of marginal LPDDR4X operation.
Supply the core rail within the 1.06V to 1.17V window with a regulator that meets the LPDDR4X power-up sequencing requirements in the Micron datasheet - core and I/O rail ramp order matters for latch-up avoidance. Because LPDDR4X uses a low-voltage VDDQ I/O rail, decouple with a dense array of ceramic capacitors (mix of 100 nF and 10 uF values, estimated: place at least one 100 nF per bank region) directly at the ball field. Verify actual rail tolerances and sequencing order against the manufacturer datasheet before tape-out.
Do not treat the BAUT:B and BIT:B variants as interchangeable: BAUT:B is LPDDR4X (lower VDDQ, automotive grade) while BIT:B is standard LPDDR4 in an industrial grade - controller VDDQ configuration and qualification documentation differ even though the 200-TFBGA footprint is identical. Also note the colon in the ordering code: distributors list the part as MT53E512M32D1ZW-046BAUT-B; quoting the wrong suffix format can return a different speed or temperature bin.
Compliance Information
AEC-Q100 qualification stated by Microchip USA product data. RoHS/REACH/lead-free/halogen status not stated in retrieved data - verify on the Micron part-detail page.
