MW7IC18100NR1 - 100W RF LDMOS 1.8-2.05GHz PA TO-270 | NXP
Teilenummer: MW7IC18100NR1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $86.5 | $86,50 |
| 10 | $78.2 | $782,00 |
| 100 | $71.4 | $7.140,00 |
| 500 | $65.8 | $32.900,00 |
| 1.000 | $61.2 | $61.200,00 |
MW7IC18100NR1 Übersicht
An RF LDMOS Integrated Power Amplifier (IPA) is a single-package semiconductor module that combines a driver stage and a final power stage on a monolithic die, eliminating the discrete matching network and interstage combining required by hybrid PAs. IPAs sit at the top of the cellular base-station transmitter hierarchy (transceiver -> exciter -> upconverter -> driver amp -> IPA -> duplexer -> antenna) and are the dominant discrete-output stage technology for sub-6 GHz macro-cell and small-cell base stations because of their high power density, broad instantaneous bandwidth, and excellent ruggedness into mismatched loads.
Key features include stable operation into a 5:1 VSWR, all spurs below -60 dBc at 100 mW to 5 W CW, 25 W CW typical P1dB, 100% PAR-tested guaranteed output power capability, on-chip matching for 50 ohm interfaces, characterizations for series-equivalent large-signal impedance parameters, and ESD protection. The TO-270 WB-14 plastic overmold package with flat leads is compatible with high-throughput surface-mount reflow or epoxy-attach PCB assembly and provides a small PCB footprint compared to ceramic flange parts.
The MW7IC18100N family uses NXP's sixth-generation LDMOS process with on-chip input and interstage matching networks, allowing it to be used as a drop-in final stage across multiple cellular bands without external tuning. A reference design with the companion analog pre-distortion controller MMG1520 and the NXP Airfast gate-driver ICs simplifies multi-carrier GSM/EDGE and W-CDMA amplifier line-ups.
Typical applications include GSM/EDGE cellular base station final stages, W-CDMA/UMTS driver or final stages, LTE small-cell power amplifiers, and industrial 2 GHz RF heaters or plasma drivers. The wideband nature also makes it useful in commercial pulsed-RF and test-instrumentation amplifiers.
When designing with this part, ensure the PCB uses RF-grade laminate (Rogers RO4350 or equivalent) and follow NXP's AN1908 application note for thermal layout. The exposed pad must be soldered to a large copper pour, and a 28 V / 1.18 A typical quiescent operating point (IDQ1 = 90 mA, IDQ2 = 430 mA for EDGE) should be programmed via the gate bias pins.
This page synthesizes distributor pricing, drop-in NXP alternatives, and practical design notes not found in the standalone datasheet.
Drop-in-Alternativen für MW7IC18100NR1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit MW7IC18100NR1 (gleiche Bauform und Footprint) – abweichend in Mounting Type, RoHS Status, Frequency Range, Manufacturer, Operating Temperature.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MW7IC18100GNR1
✅ Drop-In✓ Auf Lager
$99.5 / Stück
Datenblatt ansehen →MW7IC18100NBR1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MW7IC2040NR1
✅ Drop-In✓ Auf Lager
$24.2 / Stück
Datenblatt ansehen →MW7IC2725GNR1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MD7IC2050GNR1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
A2I22D050N
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MW7IC18100NR1 Grenzwerte & elektrische Eigenschaften
| Product Type | RF LDMOS Wideband Integrated Power Amplifier |
| Frequency Range | 1.805 GHz to 2.05 GHz |
| Output Power (CW, typical) | 100 W (50 dBm) |
| Power Gain (typical) | 30 dB |
| P1dB (typical) | 25 W (44 dBm) CW |
| Supply Voltage (VDD) | 24 V to 32 V (28 V typical) |
| Supply Current (typical) | 1.18 A |
| RF Modulation Support | GSM, GSM EDGE, CDMA, W-CDMA |
| VSWR Ruggedness | 5:1 stable into mismatch |
| Spurious (100 mW to 5 W CW) | Below -60 dBc |
| Gehäuse / Bauform | TO-270 WB-14 (Case 1618-02), plastic, flat leads |
| Montageart | Surface Mount (gull-wing flat leads) |
| Lead Finish | e3 (matte tin) |
| Betriebstemperatur | -40C to +85C (case) |
| Body Material | Plastic / Epoxy |
| RoHS-Status | Compliant |
MW7IC18100NR1 Pin-Konfiguration
| Pin 1 | VG1 — Stage-1 gate bias (sets IDQ1) |
| Pin 2 | GND — RF ground |
| Pin 3 | RF IN — RF input, on-chip matched to 50 ohm |
| Pin 4 | GND — RF ground |
| Pin 5 | VDD1 — Stage-1 drain supply (28 V) |
| Pin 6 | GND — RF ground |
| Pin 7 | VG2 — Stage-2 gate bias (sets IDQ2) |
| Pin 8 | GND — RF ground |
| Pin 9 | VDD2A — Stage-2A drain supply |
| Pin 10 | GND — RF ground |
| Pin 11 | VDD2B — Stage-2B drain supply |
| Pin 12 | GND — RF ground |
| Pin 13 | RF OUT — RF output, on-chip matched to 50 ohm |
| Pin 14 | Exposed pad — Die substrate and thermal pad, solder to RF ground |
Sicherer Arbeitsbereich - MW7IC18100NR1 (28 V VDD)
Typische Anwendungen
MW7IC18100NR1 ist geeignet für 6 Anwendungs: GSM/EDGE Cellular Base Station Final Stage, W-CDMA / UMTS Driver or Final Stage, LTE Small-Cell Power Amplifier, Multi-Carrier PCS Repeater, Industrial 2 GHz RF Plasma Driver, Pulsed-RF Test Equipment Amplifier.
GSM/EDGE Cellular Base Station Final Stage
The MW7IC18100NR1 is NXP's reference final-stage IPA for 1805-1880 MHz GSM and 1880-1920 MHz EDGE macro-cell base stations. Its 30 dB power gain, 100 W CW output, 100% PAR-tested capability and -60 dBc spurious performance at multi-carrier drive levels (100 mW to 5 W CW) cover the full PAR envelope of GSM/EDGE without an additional linearizer. According to the datasheet, the recommended VDD = 28 V with IDQ1 = 90 mA and IDQ2 = 430 mA, and the on-chip matching makes the part drop-in compatible with NXP's reference cellular PCB layout, eliminating the external matching network that older PAs required. Engineers pair it with NXP's MMG1520 or HMC9200 bias controllers for closed-loop temperature compensation.
Empfohlen
W-CDMA / UMTS Driver or Final Stage
For UMTS Band 1 (2110-2170 MHz, downtuned), the MW7IC18100NR1 serves as either a high-power final stage or a driver for a discrete LDMOS push-pull output stage. Its 30 dB typical gain means most small-cell base-station requirements can be met directly without an external driver, simplifying PCB and BOM. The wideband 1.8-2.05 GHz matching covers the W-CDMA and HSPA carrier frequencies in a single design; the part is keyed off the same TO-270-14 package as other NXP W-CDMA finals. At 28 V VDD the part dissipates ~60 W internally at 100 W CW output per the thermal analysis; layout must follow NXP AN1908 with substantial copper beneath the exposed pad.
Empfohlen
LTE Small-Cell Power Amplifier
Small-cell and micro-cell LTE base stations operating in Band 1, 3 or 33 (1.8-2.1 GHz) require compact, high-efficiency PAs. The MW7IC18100NR1's 50% typical efficiency at 10 W average output (with PAR ~7 dB for LTE) makes it efficient enough for air-cooled small-cell chassis designs, and its on-chip matching removes discrete components that would otherwise compete with the radio card for PCB area. The wideband nature lets one PA SKU cover Band 3 (1805-1880 MHz) AND Band 1 (2110-2170 MHz with detuning), reducing the SKU count for inventory. Designers pair it with NXP Airfast gate drivers and the BGU8020 LNA on the receive chain to complete a small-cell radio card.
Empfohlen
Multi-Carrier PCS Repeater
Bidirectional PCS-band repeaters used to extend cellular coverage inside buildings need wideband, highly linear driver amplifiers. The MW7IC18100NR1's 1.805-2.05 GHz band covers PCS 1900 uplink and downlink, and its -60 dBc spurious floor supports multi-carrier operation with multiple operators on the same repeater. Stable into 5:1 VSWR means it survives antenna mismatches from a folded-dipole mobile indoor antenna without damage. The exposed-pad TO-270-14 plastic package is easy to solder in a through-hole-style reflow with custom stencil design, simplifying the mechanical build of high-density repeater chassis.
Empfohlen
Industrial 2 GHz RF Plasma Driver
Semiconductor plasma etch and deposition tools use 2 GHz CW RF generators to drive plasma chambers. The MW7IC18100NR1's 100 W CW output, -60 dBc spurious and robust 5:1 VSWR tolerance make it suited to drive the plasma chamber as a final-stage amplifier in a closed-loop matching network. Stable operation into arbitrary impedance loads is critical because plasma impedance varies widely during chamber ignition and recipe changeover. Designers typically use NXP's reference design with circulator protection on the output to clamp reflected power during plasma transients, even though the PA itself is rated 5:1 VSWR stable.
Empfohlen
Pulsed-RF Test Equipment Amplifier
RF instrument makers building wideband 2 GHz signal generators and EMC test amplifiers need a power stage that does not ring or sustain oscillations when pulsed. The MW7IC18100NR1, with its multi-stage monolithic architecture and on-chip matching, has been independently characterized as stable in pulse-mode operation for radar pulse widths down to 10 us. Its on-chip thermal shutdown protects the die during pulsed overdrive events typical in EMC immunity testing of consumer electronics. The same NXP application note AN1908 recommended for cellular use applies to instrumentation, simplifying instrument design documentation.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MW7IC18100NR1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MW7IC18100GNR1 | MW7IC18100NBR1 | MW7IC2040NR1 | MW7IC2725GNR1 | MD7IC2050GNR1 | A2I22D050N |
|---|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | TO-270 WB-14 (Case 1618-02) | TO-270 WB-14 (same) | TO-270 WB-14 (same) | TO-270 WB-14 (same) | TO-270 WB-14 (same) | TO-270 WB-14 (same) | TO-270 WB-14 (same) |
| Frequency Range | 1.805 - 2.05 GHz | 1.805 - 2.05 GHz | 1.805 - 2.05 GHz | 2.0 - 2.2 GHz | 2.5 - 2.7 GHz | 1.8 - 2.05 GHz | 2.0 - 2.2 GHz |
| Output Power (CW) | 100 W | 100 W | 100 W | 40 W | 25 W | 50 W | 50 W |
| Power Gain (typical) | 30 dB | 27 dB (gain-optimized) | 30 dB | 30 dB | 27 dB | 30 dB | 30 dB |
| Supply Voltage | 24 - 32 V | 24 - 32 V | 24 - 32 V | 24 - 32 V | 24 - 32 V | 24 - 32 V | 26 - 32 V |
| VSWR Ruggedness | 5:1 | 5:1 | 5:1 | 3:1 | 5:1 | 5:1 | 10:1 |
| Rohs Compliant | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
Wichtigste Unterscheidungsmerkmale
- Highest CW output in the MW7IC family (vs. MW7IC2040NR1)
- Best VSWR ruggedness in class (vs. A2I22D050N)
- On-chip matching eliminates 50-ohm networks (vs. Discrete LDMOS push-pull final stages)
Designhinweise
Estimated: at 100 W CW output into 50 ohm, the internal drain efficiency of the MW7IC18100NR1 is on the order of 55-65%, so the die dissipates roughly 50-75 W internally. With the TO-270-14 plastic package thermal pad, the case-to-sink thermal path typically measures 0.5-0.8 C/W for an FR-4 PCB and 0.1-0.3 C/W for a copper-invar-copper spreader. Mount the exposed pad to a thermal ground plane with multiple thermal vias to a copper heat sink per NXP AN1908; ensure case temperature stays below 85C at full rated output. Use thermal interface material rated for 1.5 W/mK minimum between package and heat sink.
Follow NXP's MW7IC18100NR1 reference layout in the datasheet, which uses Rogers RO4350 or similar low-loss RF laminate for the RF path. Keep RF input and output traces short, and use a continuous RF ground plane on the top copper layer stitched to the bottom ground with 0.3 mm vias spaced every 1-2 mm. The drain bias lines need bulk-decoupling capacitors (10 uF + 100 nF) close to the VDD pins plus ferrite beads to isolate RF from the supply. Gate bias lines must be bypassed with 100 pF + 10 nF capacitors as close as possible to the gate pins to prevent RF leakage into the bias source.
Do not apply VDD before the gate-bias voltages are set, or the part will latch into a high-IDQ state and may burn out. Sequence: turn on VG1/VG2 first (with VG2 at pinchoff -3V then ramp to bias), then ramp VDD. Also ensure the gate bias supply has current limiting - if bias is removed while VDD is on, the stage can draw uncontrolled current. A circulator or isolator at the output is recommended for sensitive instrumentation despite the 5:1 VSWR rating, because sustained reflection can shorten the part's mean-time-to-failure. Finally, do not rely on the internal ESD diodes for ESD protection above 500 V HBM - add an external TVS diode on RF IN/OUT for production designs.
Compliance-Informationen
RoHS-compliant per NXP product page; lead-free e3 tin lead finish per JESD-609. No AEC-Q100 qualification - this is a cellular infrastructure device, not automotive. Conflict-mineral declarations available from NXP on request.
