MW7IC2220NBR1 - 2W W-CDMA RF Power Amplifier 2.11-2.17 GHz | NXP
Teilenummer: MW7IC2220NBR1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $38.5 | $38,50 |
| 10 | $34.2 | $342,00 |
| 100 | $28.75 | $2.875,00 |
| 500 | $24.9 | $12.450,00 |
| 1.000 | $21.5 | $21.500,00 |
MW7IC2220NBR1 Übersicht
An RF LDMOS (Laterally Diffused Metal-Oxide Semiconductor) power amplifier is a specialized transistor structure used in wireless infrastructure where high RF output power, high efficiency, and ruggedness against mismatch are required. It belongs to the LDMOS family of power transistors, which sit in the broader hierarchy of RF power devices -> RF amplifiers -> wireless infrastructure ICs -> semiconductor. LDMOS technology dominates cellular base station power amplifier design because it offers high breakdown voltage, excellent thermal performance, and stable operation under VSWR stress conditions.
The MW7IC2220NBR1 features approximately 31 dB small-signal gain, 28 V drain bias with 24 to 32 V operating range, and built-in ESD protection. The integrated quiescent current setting reduces external component count, and the TO-272WB-16 over-molded plastic package provides a low thermal resistance path to the system heatsink. The device supports all major cellular modulation formats including TD-SCDMA, W-CDMA, and LTE when operated within the 2.11-2.17 GHz downlink band.
Typical applications include W-CDMA/LTE base station driver stages, TD-SCDMA repeater amplifiers, and 2 GHz band RF power blocks for small-cell infrastructure. Designers value the part for its multi-stage architecture that delivers high gain in a single footprint, eliminating the need for separate driver and final-stage components. The on-chip matching reduces PCB complexity and BOM cost while maintaining broadband flatness.
When designing with this part, attention to thermal management is critical: at 2 W average output and 28 V supply, the device dissipates significant DC power, and the TO-272WB-16 package requires a properly mounted heatsink or cold plate. Input and output 50 ohm interfaces are already matched on-die, so the external PCB only needs standard transmission-line routing and DC blocking/bias feed networks per the manufacturer datasheet.
Drop-in-Alternativen für MW7IC2220NBR1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit MW7IC2220NBR1 (gleiche Bauform und Footprint) – abweichend in Mounting Type, Technology, Frequency Range, Package / Case, RF Type.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MW7IC2220NR1
✅ Drop-In✓ Auf Lager
$18.75 / Stück
Datenblatt ansehen →MW7IC2220GNR1
✅ Drop-In✓ Auf Lager
$25.1 / Stück
Datenblatt ansehen →MW7IC2040NBR1
✅ Drop-In✓ Auf Lager
$15.2 / Stück
Datenblatt ansehen →MW7IC2040NR1
✅ Drop-In✓ Auf Lager
$24.2 / Stück
Datenblatt ansehen →MW7IC2240NBR1
✅ Drop-In✓ Auf Lager
$29 / Stück
Datenblatt ansehen →MW7IC2220NBR1 Grenzwerte & elektrische Eigenschaften
| Technology | RF LDMOS (Laterally Diffused MOSFET) |
| Funktion | W-CDMA Wideband Integrated Power Amplifier |
| Frequency Range | 2000 MHz to 2200 MHz (usable), 2110-2170 MHz (W-CDMA band) |
| Operating Frequency (typical) | 2167.5 MHz |
| Average Output Power | 2 W (33 dBm) |
| Drain Supply Voltage (VDD) | 28 V (24 V to 32 V operating range) |
| Small-Signal Gain | 31 dB (typical at 2.17 GHz) |
| Quiescent Current Stage 1 (IDQ1) | 80 mA |
| Quiescent Current Stage 2 (IDQ2) | 300 mA |
| Package Type | TO-272WB-16 (over-molded plastic) |
| Input Matching | On-chip (50 ohm nominal) |
| Output Matching | On-chip (50 ohm nominal) |
| Characteristic Impedance | 50 ohm |
| Maximum Operating Temperature | 150 C |
| Montageart | Surface Mount (flange/over-molded) |
| Modulation Support | W-CDMA, TD-SCDMA, LTE, multi-carrier |
| Test Signal | Single-Carrier W-CDMA, IQ Magnitude Clipping, PAR = 7.5 dB |
| ACPR Measurement | 3.84 MHz channel bandwidth at +/-5 MHz offset |
MW7IC2220NBR1 Pin-Konfiguration
| Pin 1 | RF_IN — RF input (50 ohm, on-chip matched) |
| Pin 2 | VGG1 — Stage 1 gate bias |
| Pin 3 | GND — Ground (stage 1 source) |
| Pin 4 | VDD1 — Stage 1 drain supply (28 V nominal) |
| Pin 5 | GND — Ground |
| Pin 6 | NC — Not connected (per datasheet) |
| Pin 7 | GND — Ground |
| Pin 8 | VDD2 — Stage 2 drain supply (28 V nominal) |
| Pin 9 | VGG2 — Stage 2 gate bias |
| Pin 10 | GND — Ground (stage 2 source) |
| Pin 11 | GND — Ground |
| Pin 12 | NC — Not connected (per datasheet) |
| Pin 13 | GND — Ground |
| Pin 14 | RF_OUT — RF output (50 ohm, on-chip matched) |
| Pin 15 | GND — Ground (flange/thermal pad) |
| Pin 16 | GND — Ground (flange/thermal pad) |
DC Sicherer Arbeitsbereich
Typische Anwendungen
MW7IC2220NBR1 ist geeignet für 6 Anwendungs: W-CDMA Base Station Driver Stage, LTE Band 1 Small Cell PA, TD-SCDMA Repeater Amplifier, Multi-Standard Cellular RF Block, Industrial 2 GHz Band RF Amplifier, RF Power Amplifier Reference Design Platform.
W-CDMA Base Station Driver Stage
The MW7IC2220NBR1's 2 W average output at 2110-2170 MHz with 31 dB gain makes it well suited as a driver or low-power final stage in macro-cell W-CDMA base stations. Per the NXP datasheet, ACPR measured in a 3.84 MHz channel at +/-5 MHz offset confirms compliance with UMTS spectral mask requirements when biased at IDQ2 = 300 mA and VDD = 28 V. The on-chip 50 ohm matching networks eliminate external matching components, reducing PCB complexity and BOM cost versus discrete LDMOS solutions.
Empfohlen
LTE Band 1 Small Cell PA
For LTE Band 1 (2110-2170 MHz) small-cell and picocell radio units, the MW7IC2220NBR1's 2 W average output covers typical micro-cell downlink power requirements. The device's wideband 2000-2200 MHz usability allows one SKU to cover both UMTS Band I and LTE Band 1, simplifying inventory for multi-standard small-cell OEMs. According to NXP, the device handles LTE resource-block allocations with good ACLR performance thanks to its two-stage LDMOS architecture and on-chip matching.
Empfohlen
TD-SCDMA Repeater Amplifier
The MW7IC2220NBR1 supports TD-SCDMA modulation natively per the NXP datasheet, making it suitable for indoor/outdoor repeater amplifier modules operating in the 2.11-2.17 GHz downlink band. Its integrated two-stage architecture and on-chip matching minimize PCB footprint - critical for compact repeater enclosures. The 24-32 V supply range accommodates standard 28 V repeater power buses, and the over-molded TO-272WB-16 package simplifies mechanical integration into sealed repeater housings.
Empfohlen
Multi-Standard Cellular RF Block
For multi-standard radio units that must cover UMTS, LTE, and TD-SCDMA within 2000-2200 MHz, the MW7IC2220NBR1 provides a single 2 W RF power block with on-chip matching that does not require per-band retuning. The device's wideband usability per the NXP datasheet enables one PCB layout to serve multiple regional SKUs in the same product family, reducing design cost and time-to-market for global cellular infrastructure products.
Empfohlen
Industrial 2 GHz Band RF Amplifier
Outside cellular infrastructure, the MW7IC2220NBR1's broadband 2000-2200 MHz usability and 2 W output make it a candidate for industrial 2 GHz ISM-adjacent RF links, point-to-point microwave radio drivers, and test instrumentation signal sources. The integrated two-stage LDMOS design simplifies these custom RF chains by eliminating a discrete pre-driver stage. Its ruggedness against output mismatch, inherent to LDMOS technology, suits field-deployed industrial RF equipment.
Empfohlen
RF Power Amplifier Reference Design Platform
Designers frequently adopt the MW7IC2220NBR1 as a reference platform for evaluating NXP's LDMOS two-stage integrated PA architecture before scaling to higher-power macro-cell final stages. The evaluation board and layout recommendations in the NXP datasheet enable rapid prototyping of new RF chains. Once the architecture is validated at 2 W, designers can migrate to NXP's higher-power discrete LDMOS transistors while retaining the same bias and matching network topology.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MW7IC2220NBR1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MW7IC2220NR1 | MW7IC2220GNR1 | MW7IC2040NBR1 | MW7IC2040NR1 | MW7IC2240NBR1 |
|---|---|---|---|---|---|---|
| Package | TO-272WB-16 | TO-272WB-16 - same | TO-272WB-16 - same | TO-272WB-16 - same | TO-272WB-16 - same | TO-272WB-16 - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Frequency Band | 2110-2170 MHz | 2110-2170 MHz | 2110-2170 MHz | 1805-1990 MHz | 1805-1990 MHz | 2300-2400 MHz |
| Average Output Power | 2 W | 2 W | 2 W | 2 W | 2 W | 2 W |
| Supply Voltage (VDD) | 28 V (24-32 V) | 28 V (24-32 V) | 28 V (24-32 V) | 28 V (24-32 V) | 28 V (24-32 V) | 28 V (24-32 V) |
| Small-Signal Gain | 31 dB | 31 dB | 31 dB (gain-optimized) | 31 dB | 31 dB | 31 dB |
| On-Chip Matching | Yes (input + output) | Yes | Yes | Yes | Yes | Yes |
| Variant Type | NB (narrowband-optimized) | Standard | Gain-optimized | NB variant (1805-1990 MHz) | Standard variant (1805-1990 MHz) | NB variant (2300-2400 MHz) |
Wichtigste Unterscheidungsmerkmale
- Integrated two-stage LDMOS with on-chip matching (vs. MW7IC2220NR1)
- Narrowband-tuned for 2.11-2.17 GHz W-CDMA (vs. MW7IC2040NBR1)
- 2 W integrated PA in TO-272WB-16 (vs. MW7IC2220GNR1)
Designhinweise
Estimated: at 2 W RF output and 28 V drain supply with typical PAE around 25%, the MW7IC2220NBR1 dissipates roughly 6-8 W as heat. The TO-272WB-16 over-molded plastic package requires a properly mounted heatsink or cold plate to keep the junction below the 150 C maximum operating temperature. Apply thermal compound between the package flange and the heatsink, and use the recommended mounting torque from the manufacturer datasheet to minimize thermal interface resistance.
Per the NXP evaluation board layout, use 50 ohm microstrip transmission lines on a low-loss PCB substrate (e.g., RO4350B) for both RF input and RF output traces. Place DC blocking capacitors at the RF ports and provide adequate bias feed networks (RFC + bypass) on VDD1, VDD2, VGG1, and VGG2. Ground vias should be placed densely around and beneath the package flange to minimize lead inductance and thermal resistance.
Do not exceed the 32 V maximum drain supply; transients above this rating can cause permanent damage to the LDMOS structure. Ensure the gate bias is applied BEFORE the drain voltage to avoid impact ionization, and remove drain voltage BEFORE removing gate bias during power-down sequencing. Per the manufacturer datasheet, ACPR performance degrades significantly if quiescent currents are set outside the recommended IDQ1 = 80 mA, IDQ2 = 300 mA targets.
Keep RF input and RF output traces well separated to prevent oscillation; if the PCB requires them to be in close proximity, place a ground plane wall (via fence) between them. Match the trace lengths to provide symmetrical bias feed paths to both stages, which improves push-pull balance and reduces even-order harmonic content. Add a small series gate resistor (typically 10-50 ohm) at each gate bias pin to improve stability margin.
Compliance-Informationen
RoHS and lead-free compliance per NXP product page. Halogen-free status not confirmed from verified data; not AEC-Q100 qualified (this is an RF power IC for base station use, not automotive).
