MW7IC2220NBR1 vs MW7IC2240NBR1 Vergleich

Detaillierter Direktvergleich von MW7IC2220NBR1 von NXP Semiconductors und MW7IC2240NBR1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MW7IC2220NBR1 MW7IC2220NBR1 - 2W W-CDMA RF Power Amplifier 2.11-2.17 GHz | NXP

MW7IC2220NBR1 - 2W W-CDMA RF Power Amplifier 2.11-2.17 GHz | NXP

MW7IC2220NBR1 ✓ Aktiv
NXP Semiconductors
MW7IC2240NBR1 MW7IC2240NBR1 - 4W W-CDMA RF LDMOS Power Amplifier | NXP

MW7IC2240NBR1 - 4W W-CDMA RF LDMOS Power Amplifier | NXP

MW7IC2240NBR1 Obsolete

Spezifikationsvergleich

Parameter MW7IC2220NBR1 MW7IC2240NBR1
Marke NXP Semiconductors NXP Semiconductors
Kategorie RF Amplifiers RF Amplifiers
Lebenszyklusstatus Aktiv Obsolete
Lagerstatus In Stock In Stock
Stückpreis (USD) $21,50 $29,00
Technology RF LDMOS (Laterally Diffused MOSFET) RF LDMOS (multi-stage integrated)
Funktion W-CDMA Wideband Integrated Power Amplifier —
Frequency Range 2000 MHz to 2200 MHz (usable), 2110-2170 MHz (W-CDMA band) 2110 MHz to 2170 MHz (usable 2000-2200 MHz)
Operating Frequency (typical) 2167.5 MHz —
Average Output Power 2 W (33 dBm) —
Drain Supply Voltage (VDD) 28 V (24 V to 32 V operating range) —
Small-Signal Gain 31 dB (typical at 2.17 GHz) —
Quiescent Current Stage 1 (IDQ1) 80 mA 90 mA
Quiescent Current Stage 2 (IDQ2) 300 mA 420 mA
Package Type TO-272WB-16 (over-molded plastic) —
Input Matching On-chip (50 ohm nominal) —
Output Matching On-chip (50 ohm nominal) —
Characteristic Impedance 50 ohm —
Maximum Operating Temperature 150 C —
Montageart Surface Mount (flange/over-molded) Surface Mount
Modulation Support W-CDMA, TD-SCDMA, LTE, multi-carrier —
Test Signal Single-Carrier W-CDMA, IQ Magnitude Clipping, PAR = 7.5 dB —
ACPR Measurement 3.84 MHz channel bandwidth at +/-5 MHz offset —
Modulation / RF Type — W-CDMA (also TD-SCDMA, LTE)
Output Power (Average) — 4 W Avg. @ 2112.5 MHz, single-carrier W-CDMA
Supply Voltage (VDD) — 28 V (rated 24 V to 32 V operation)
Minimum Gain — 15 dB (typical 30 dB)
Input VSWR — 5:1
Output VSWR — 5:1
Nominal Impedance — 50 ohm (on-chip matched)
P1dB (Output) — 46 dBm (per distributor listing)
Gehäuse — TO-272 WB-16 (over-molded plastic, 16-lead)
Terminal Finish — Matte Tin (Sn)
Package Body Material — Plastic / Epoxy
Operating Mode — 100% PAR tested for W-CDMA-like signals
RoHS-Status — [DATA_NEEDED: RoHS compliance]

Datenblätter & Ressourcen

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