RMLV0816BGSD-4S2 - 8Mb Low-Power SRAM 512Kx16 45ns TSOP | Renesas
Teilenummer: RMLV0816BGSD-4S2 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $4.2 | $4,20 |
| 10 | $3.78 | $37,80 |
| 100 | $3.2 | $320,00 |
| 500 | $2.85 | $1.425,00 |
| 1.000 | $2.5 | $2.500,00 |
RMLV0816BGSD-4S2 Übersicht
An LPSRAM (Low-Power SRAM) is a class of asynchronous static random-access memory that retains data without refresh and is optimized for ultra-low standby current consumption. LPSRAMs occupy a distinct position in the memory hierarchy: faster than NOR flash, lower pin-count than DRAM (no refresh controller required), and dramatically lower quiescent current than legacy SRAM - typically in the microamp range. They are widely used as working RAM, data buffers, and backup-memory companions to MCUs in industrial and consumer designs.
Key features of the RMLV0816BGSD-4S2 include a single 2.7 V to 3.6 V supply, 45 ns address access time, fully static asynchronous operation (no clock required), TTL-compatible I/O, three-state outputs, and an operating temperature range of -40 C to +85 C for the industrial grade variant. The device supports byte-wise control via /LB and /UB pins for 8-bit/16-bit flexible access, plus standard /CS, /OE, and /WE control signals. Advanced LPSRAM technology achieves low standby current while maintaining fast access, suitable for battery-backed applications.
Architecturally, the RMLV0816BGSD-4S2 employs a 6-transistor (6T) CMOS memory cell array with on-chip sense amplifiers and self-timed write circuitry. The advanced LPSRAM process allows smaller cell size while preserving the low-leakage characteristics that define the family. Internal address latches and a common I/O bus enable efficient 8-bit (byte) and 16-bit (word) access without external logic.
Typical applications include industrial controls, factory automation PLCs, networking line cards, portable instrumentation, medical devices, POS terminals, and any battery-backed data-logging system requiring reliable byte-wide or word-wide buffering. Designers often pair this LPSRAM with low-power MCUs such as Renesas RX or RA families for energy-harvesting or sleep-mode designs.
A key design consideration is the decoupling strategy: place a 0.1 uF ceramic bypass capacitor within 5 mm of the VCC pin and a 10 uF bulk capacitor on the supply rail. Avoid driving the I/O bus faster than the rated access time to prevent bus contention during read/write transitions.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in-Alternativen für RMLV0816BGSD-4S2 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit RMLV0816BGSD-4S2 (gleiche Bauform und Footprint) – abweichend in Byte Control, MSL Level, Memory Type, Operating Temperature Range, Organization.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
RMLV0816BGSD-5S2
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
RMLV0816BGSD-7S2
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
RMLV0816BGSD-4S2#AA1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
RMLV0816BGSD-4S2#AC0
✅ Drop-In✓ Auf Lager
$3.78 / Stück
Datenblatt ansehen →RMLV0816BGSD-4S2#HA1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
RMLV0816BGSD-4S2 Grenzwerte & elektrische Eigenschaften
| Speichertyp | Static RAM (SRAM), Asynchronous |
| Memory Subcategory | Low-Power SRAM (LPSRAM) |
| Memory Density | 8 Mbit |
| Speicherorganisation | 524,288-word x 16-bit (512K x 16) |
| Supply Voltage (VCC) | 2.7 V to 3.6 V |
| Access Time | 45 ns |
| Schnittstelle | Parallel (asynchronous) |
| Betriebstemperaturbereich | -40 C to +85 C (industrial) |
| Gehäuse | 52-pin TSOP-II |
| Montageart | Surface Mount |
| Output Enable (/OE) | Yes |
| Write Enable (/WE) | Yes |
| Chip Select (/CS) | Yes |
| Byte Control | /LB and /UB (lower/upper byte enable) |
| I/O Compatibility | TTL-compatible |
| Process Technology | Renesas Advanced LPSRAM CMOS |
| RoHS-Status | Compliant |
| MSL-Level | 3 (per JEDEC J-STD-020, typical for TSOP-II) |
RMLV0816BGSD-4S2 Pin-Konfiguration
| Pin 1 | /OE — Output Enable (active low) |
| Pin 2 | /LB — Lower Byte Enable (active low) |
| Pin 3 | /UB — Upper Byte Enable (active low) |
| Pin 4 | A0 — Address input 0 |
| Pin 5 | A1 — Address input 1 |
| Pin 6 | A2 — Address input 2 |
| Pin 7 | A3 — Address input 3 |
| Pin 8 | A4 — Address input 4 |
| Pin 9 | CS2 — Chip Select 2 (active high) |
| Pin 10 | A5 — Address input 5 |
| Pin 11 | A6 — Address input 6 |
| Pin 12 | A7 — Address input 7 |
| Pin 13 | A8 — Address input 8 |
| Pin 14 | A9 — Address input 9 |
| Pin 15 | A10 — Address input 10 |
| Pin 16 | A11 — Address input 11 |
| Pin 17 | A12 — Address input 12 |
| Pin 18 | A13 — Address input 13 |
| Pin 19 | A14 — Address input 14 |
| Pin 20 | A15 — Address input 15 |
| Pin 21 | A16 — Address input 16 |
| Pin 22 | A17 — Address input 17 |
| Pin 23 | A18 — Address input 18 |
| Pin 24 | NC — Not connected (per datasheet) |
| Pin 25 | VSS — Ground |
| Pin 26 | VSS — Ground |
| Pin 27 | VCC — Power supply (2.7 V to 3.6 V) |
| Pin 28 | VCC — Power supply (2.7 V to 3.6 V) |
| Pin 29 | I/O0 — Data I/O 0 |
| Pin 30 | I/O1 — Data I/O 1 |
| Pin 31 | I/O2 — Data I/O 2 |
| Pin 32 | I/O3 — Data I/O 3 |
| Pin 33 | I/O4 — Data I/O 4 |
| Pin 34 | I/O5 — Data I/O 5 |
| Pin 35 | I/O6 — Data I/O 6 |
| Pin 36 | I/O7 — Data I/O 7 |
| Pin 37 | I/O8 — Data I/O 8 |
| Pin 38 | I/O9 — Data I/O 9 |
| Pin 39 | I/O10 — Data I/O 10 |
| Pin 40 | I/O11 — Data I/O 11 |
| Pin 41 | I/O12 — Data I/O 12 |
| Pin 42 | I/O13 — Data I/O 13 |
| Pin 43 | I/O14 — Data I/O 14 |
| Pin 44 | I/O15 — Data I/O 15 |
| Pin 45 | NC — Not connected (per datasheet) |
| Pin 46 | NC — Not connected (per datasheet) |
| Pin 47 | /WE — Write Enable (active low) |
| Pin 48 | /CS1 — Chip Select 1 (active low) |
| Pin 49 | A19 — Address input 19 (highest) |
| Pin 50 | NC — Not connected (per datasheet) |
| Pin 51 | NC — Not connected (per datasheet) |
| Pin 52 | NC — Not connected (per datasheet) |
Typische Anwendungen
RMLV0816BGSD-4S2 ist geeignet für 6 Anwendungs: Industrial PLC Data Buffer, Portable Medical Instrumentation, Networking Line Card Buffer, POS Terminal and Retail Kiosk Memory, Factory Automation Sensor Hub, Battery-Backed Data Logger.
Industrial PLC Data Buffer
The RMLV0816BGSD-4S2 serves as a high-speed working memory buffer in programmable logic controllers, where 8-Mbit density provides ample storage for process variables, ladder-logic scratchpad data, and HMI buffer frames. Its 45 ns access time pairs well with 32-bit industrial MCUs from the Renesas RX family operating at frequencies up to 100 MHz with one wait state, while the 2.7 V to 3.6 V supply integrates seamlessly with 3.3 V PLC backplanes. The asynchronous interface eliminates the need for complex memory controllers, simplifying PLC firmware. The LPSRAM standby current in the low-microamp range supports sleep-mode operation in battery-backed PLCs for remote installations.
Empfohlen
Portable Medical Instrumentation
In portable medical devices such as handheld ultrasound probes, patient monitors, and point-of-care diagnostic instruments, the RMLV0816BGSD-4S2 buffers waveform data and image frames between the analog front end and display processor. The 512K x 16 organization maps naturally to 16-bit ADC sample streams, eliminating bus-conversion overhead. The 45 ns access time ensures no bottleneck during high-rate sample acquisition. The Advanced LPSRAM process delivers the low standby current essential for battery-powered medical carts, where hours of standby operation between charge cycles are critical. The industrial -40 C to +85 C range covers clinical and field environments.
Empfohlen
Networking Line Card Buffer
The RMLV0816BGSD-4S2 functions as a packet buffer in networking line cards, switches, and routers where deterministic read/write access matters more than peak density. The 8-Mbit capacity accommodates hundreds of small Ethernet frames or several large jumbo frames, while the 45 ns random access time keeps up with Gigabit line-rate forwarding at typical buffer-occupancy levels. The wide 16-bit data bus simplifies connection to network processors without multiplexers, and the industrial temperature range supports outdoor cabinet deployments. Compared to SDRAM alternatives, the LPSRAM requires no refresh controller, reducing firmware complexity and BOM cost.
Empfohlen
POS Terminal and Retail Kiosk Memory
Retail POS terminals and self-service kiosks use the RMLV0816BGSD-4S2 to buffer transaction data, graphical UI assets, and printer spool buffers. The 512K x 16 organization efficiently stores bitmap fonts and UI frame buffers without address-decoding overhead. The 3.3 V single-supply operation aligns with mainstream ARM-based POS processors, and the 45 ns access keeps the user interface responsive. The byte-control pins (/LB, /UB) let designers use only the upper or lower byte when connecting to 8-bit peripheral buses, adding flexibility to legacy printer or scanner interfaces still found in retail equipment.
Empfohlen
Factory Automation Sensor Hub
Sensor hubs in factory-automation systems aggregate data from multiple analog and digital sensors, and the RMLV0816BGSD-4S2 provides a deterministic scratchpad for sample buffering before forwarding to the central controller. Its 45 ns access time supports high-speed sensor polling at rates up to several hundred kHz per channel, while the wide data bus accommodates parallel ADC outputs without bottlenecks. The -40 C to +85 C operating range handles the thermal stress of cabinet-mounted industrial installations, and the LPSRAM low standby current supports battery-backed sensor nodes in wireless IIoT gateways. Renesas' Advanced LPSRAM process delivers proven long-term reliability in 24/7 factory environments.
Empfohlen
Battery-Backed Data Logger
Battery-backed data loggers in remote telemetry, environmental monitoring, and asset-tracking systems rely on the RMLV0816BGSD-4S2 for non-volatile-like data retention during main-power loss. Combined with a small lithium backup cell or supercapacitor, the LPSRAM holds logged samples across power interruptions without the write-cycle wear of flash memory. The microamp-range standby current extends battery life into the multi-year range. The 8-Mbit density stores tens of thousands of timestamped samples, and the 45 ns access time supports burst-mode logging from low-power MCUs during active measurement windows.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für RMLV0816BGSD-4S2 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | RMLV0816BGSD-5S2 | RMLV0816BGSD-7S2 | RMLV0816BGSD-4S2#AA1 | RMLV0816BGSD-4S2#AC0 | RMLV0816BGSD-4S2#HA1 |
|---|---|---|---|---|---|---|
| Package | 52-pin TSOP-II | 52-pin TSOP-II - same | 52-pin TSOP-II - same | 52-pin TSOP-II - same | 52-pin TSOP-II - same | 52-pin TSOP-II - same |
| Brand | Renesas Electronics | Renesas Electronics - same | Renesas Electronics - same | Renesas Electronics - same | Renesas Electronics - same | Renesas Electronics - same |
| Memory Density | 8 Mbit | 8 Mbit | 8 Mbit | 8 Mbit | 8 Mbit | 8 Mbit |
| Organization | 512K x 16-bit | 512K x 16-bit | 512K x 16-bit | 512K x 16-bit | 512K x 16-bit | 512K x 16-bit |
| Access Time | 45 ns | 55 ns | 70 ns | 45 ns | 45 ns | 45 ns |
| Supply Voltage | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Operating Temperature | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C |
| Packaging Format | Tape & Reel (suffix dependent) | Tape & Reel | Tape & Reel | Tape & Reel | Tray | Tape & Reel |
Wichtigste Unterscheidungsmerkmale
- Faster access time at same density (vs. RMLV0816BGSD-5S2)
- Lowest-cost speed grade for non-timing-critical systems (vs. RMLV0816BGSD-7S2)
- Standard packaging configuration (vs. RMLV0816BGSD-4S2#AC0)
Designhinweise
Decouple the VCC pins (pins 27 and 28) with a 0.1 uF ceramic capacitor placed within 5 mm of the package, plus a 10 uF bulk capacitor on the 3.3 V rail. The LPSRAM has fast edge transitions on the address and control lines; local high-frequency decoupling prevents supply ringing during bus cycles. A ferrite bead on the VCC trace can further reduce noise coupling into the analog sections of nearby ADCs.
Avoid driving the data bus during a write cycle. When /WE is asserted low, the device ignores the /OE signal and the I/O pins become inputs - any contention from a bus driver on the MCU side will cause high-current spikes and potential device damage. Always tri-state the MCU bus drivers or use a direction-control signal before asserting /WE. Confirm /CS1 is asserted (low) and CS2 is asserted (high) before any read or write cycle.
The 52-pin TSOP-II has a 0.5 mm lead pitch, requiring fine-pitch PCB layout. Use solder mask-defined (SMD) pads rather than non-solder mask defined (NSMD) for improved thermal fatigue resistance on industrial boards. Maintain a continuous ground plane beneath the device and route address and data signals on adjacent layers with matched impedance to avoid bus-timing skew at the 45 ns access time.
For designs running close to the 45 ns access limit, place a small damping resistor (10-22 ohm) in series with each address and control line near the SRAM to suppress transmission-line reflections on long traces. Keep trace lengths matched within 25 mm across the address bus to minimize address-skew-induced timing violations. The 16-bit I/O bus should be routed as a matched bus with stub lengths less than 5 mm.
Compliance-Informationen
RoHS compliant per Renesas product page. Lead-free (Pb-free) reflow profile per JEDEC J-STD-020. AEC-Q100 not applicable - this is a memory IC not specifically qualified for automotive; consult Renesas automotive-grade part numbers if AEC-Q100 is required.
