RMLV0816BGSD-4S2 - 8Mb Low-Power SRAM 512Kx16 45ns TSOP | Renesas
料号： RMLV0816BGSD-4S2 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $4.2 | $4.20 |
| 10 | $3.78 | $37.80 |
| 100 | $3.2 | $320.00 |
| 500 | $2.85 | $1,425.00 |
| 1,000 | $2.5 | $2,500.00 |
RMLV0816BGSD-4S2 概述
An LPSRAM (Low-Power SRAM) is a class of asynchronous static random-access memory that retains data without refresh and is optimized for ultra-low standby current consumption. LPSRAMs occupy a distinct position in the memory hierarchy: faster than NOR flash, lower pin-count than DRAM (no refresh controller required), and dramatically lower quiescent current than legacy SRAM - typically in the microamp range. They are widely used as working RAM, data buffers, and backup-memory companions to MCUs in industrial and consumer designs.
Key features of the RMLV0816BGSD-4S2 include a single 2.7 V to 3.6 V supply, 45 ns address access time, fully static asynchronous operation (no clock required), TTL-compatible I/O, three-state outputs, and an operating temperature range of -40 C to +85 C for the industrial grade variant. The device supports byte-wise control via /LB and /UB pins for 8-bit/16-bit flexible access, plus standard /CS, /OE, and /WE control signals. Advanced LPSRAM technology achieves low standby current while maintaining fast access, suitable for battery-backed applications.
Architecturally, the RMLV0816BGSD-4S2 employs a 6-transistor (6T) CMOS memory cell array with on-chip sense amplifiers and self-timed write circuitry. The advanced LPSRAM process allows smaller cell size while preserving the low-leakage characteristics that define the family. Internal address latches and a common I/O bus enable efficient 8-bit (byte) and 16-bit (word) access without external logic.
Typical applications include industrial controls, factory automation PLCs, networking line cards, portable instrumentation, medical devices, POS terminals, and any battery-backed data-logging system requiring reliable byte-wide or word-wide buffering. Designers often pair this LPSRAM with low-power MCUs such as Renesas RX or RA families for energy-harvesting or sleep-mode designs.
A key design consideration is the decoupling strategy: place a 0.1 uF ceramic bypass capacitor within 5 mm of the VCC pin and a 10 uF bulk capacitor on the supply rail. Avoid driving the I/O bus faster than the rated access time to prevent bus contention during read/write transitions.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
直接替换替代料： RMLV0816BGSD-4S2 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： RMLV0816BGSD-4S2 （相同外形与封装尺寸） ——差异在于 Byte Control, MSL Level, Memory Type, Operating Temperature Range, Organization.
快速对比工具——选择替代料号进行并排对比：
RMLV0816BGSD-5S2
✅ 直接替换📋 参考替代料（不在目录中）
RMLV0816BGSD-7S2
✅ 直接替换📋 参考替代料（不在目录中）
RMLV0816BGSD-4S2#AA1
✅ 直接替换📋 参考替代料（不在目录中）
RMLV0816BGSD-4S2#AC0
✅ 直接替换✓ 有现货
$3.78 / 个
查看数据手册 →RMLV0816BGSD-4S2#HA1
✅ 直接替换📋 参考替代料（不在目录中）
RMLV0816BGSD-4S2 最大额定值与电气特性
| 存储器类型 | Static RAM (SRAM), Asynchronous |
| Memory Subcategory | Low-Power SRAM (LPSRAM) |
| Memory Density | 8 Mbit |
| 存储组织 | 524,288-word x 16-bit (512K x 16) |
| Supply Voltage (VCC) | 2.7 V to 3.6 V |
| Access Time | 45 ns |
| 接口 | Parallel (asynchronous) |
| 工作温度范围 | -40 C to +85 C (industrial) |
| 封装 | 52-pin TSOP-II |
| 安装类型 | Surface Mount |
| Output Enable (/OE) | Yes |
| Write Enable (/WE) | Yes |
| Chip Select (/CS) | Yes |
| Byte Control | /LB and /UB (lower/upper byte enable) |
| I/O Compatibility | TTL-compatible |
| Process Technology | Renesas Advanced LPSRAM CMOS |
| RoHS 状态 | Compliant |
| MSL 等级 | 3 (per JEDEC J-STD-020, typical for TSOP-II) |
RMLV0816BGSD-4S2 引脚配置
| 引脚 1 | /OE — Output Enable (active low) |
| 引脚 2 | /LB — Lower Byte Enable (active low) |
| 引脚 3 | /UB — Upper Byte Enable (active low) |
| 引脚 4 | A0 — Address input 0 |
| 引脚 5 | A1 — Address input 1 |
| 引脚 6 | A2 — Address input 2 |
| 引脚 7 | A3 — Address input 3 |
| 引脚 8 | A4 — Address input 4 |
| 引脚 9 | CS2 — Chip Select 2 (active high) |
| 引脚 10 | A5 — Address input 5 |
| 引脚 11 | A6 — Address input 6 |
| 引脚 12 | A7 — Address input 7 |
| 引脚 13 | A8 — Address input 8 |
| 引脚 14 | A9 — Address input 9 |
| 引脚 15 | A10 — Address input 10 |
| 引脚 16 | A11 — Address input 11 |
| 引脚 17 | A12 — Address input 12 |
| 引脚 18 | A13 — Address input 13 |
| 引脚 19 | A14 — Address input 14 |
| 引脚 20 | A15 — Address input 15 |
| 引脚 21 | A16 — Address input 16 |
| 引脚 22 | A17 — Address input 17 |
| 引脚 23 | A18 — Address input 18 |
| 引脚 24 | NC — Not connected (per datasheet) |
| 引脚 25 | VSS — Ground |
| 引脚 26 | VSS — Ground |
| 引脚 27 | VCC — Power supply (2.7 V to 3.6 V) |
| 引脚 28 | VCC — Power supply (2.7 V to 3.6 V) |
| 引脚 29 | I/O0 — Data I/O 0 |
| 引脚 30 | I/O1 — Data I/O 1 |
| 引脚 31 | I/O2 — Data I/O 2 |
| 引脚 32 | I/O3 — Data I/O 3 |
| 引脚 33 | I/O4 — Data I/O 4 |
| 引脚 34 | I/O5 — Data I/O 5 |
| 引脚 35 | I/O6 — Data I/O 6 |
| 引脚 36 | I/O7 — Data I/O 7 |
| 引脚 37 | I/O8 — Data I/O 8 |
| 引脚 38 | I/O9 — Data I/O 9 |
| 引脚 39 | I/O10 — Data I/O 10 |
| 引脚 40 | I/O11 — Data I/O 11 |
| 引脚 41 | I/O12 — Data I/O 12 |
| 引脚 42 | I/O13 — Data I/O 13 |
| 引脚 43 | I/O14 — Data I/O 14 |
| 引脚 44 | I/O15 — Data I/O 15 |
| 引脚 45 | NC — Not connected (per datasheet) |
| 引脚 46 | NC — Not connected (per datasheet) |
| 引脚 47 | /WE — Write Enable (active low) |
| 引脚 48 | /CS1 — Chip Select 1 (active low) |
| 引脚 49 | A19 — Address input 19 (highest) |
| 引脚 50 | NC — Not connected (per datasheet) |
| 引脚 51 | NC — Not connected (per datasheet) |
| 引脚 52 | NC — Not connected (per datasheet) |
典型应用
RMLV0816BGSD-4S2 适用于 6 应用s: Industrial PLC Data Buffer, Portable Medical Instrumentation, Networking Line Card Buffer, POS Terminal and Retail Kiosk Memory, Factory Automation Sensor Hub, Battery-Backed Data Logger.
Industrial PLC Data Buffer
The RMLV0816BGSD-4S2 serves as a high-speed working memory buffer in programmable logic controllers, where 8-Mbit density provides ample storage for process variables, ladder-logic scratchpad data, and HMI buffer frames. Its 45 ns access time pairs well with 32-bit industrial MCUs from the Renesas RX family operating at frequencies up to 100 MHz with one wait state, while the 2.7 V to 3.6 V supply integrates seamlessly with 3.3 V PLC backplanes. The asynchronous interface eliminates the need for complex memory controllers, simplifying PLC firmware. The LPSRAM standby current in the low-microamp range supports sleep-mode operation in battery-backed PLCs for remote installations.
推荐
Portable Medical Instrumentation
In portable medical devices such as handheld ultrasound probes, patient monitors, and point-of-care diagnostic instruments, the RMLV0816BGSD-4S2 buffers waveform data and image frames between the analog front end and display processor. The 512K x 16 organization maps naturally to 16-bit ADC sample streams, eliminating bus-conversion overhead. The 45 ns access time ensures no bottleneck during high-rate sample acquisition. The Advanced LPSRAM process delivers the low standby current essential for battery-powered medical carts, where hours of standby operation between charge cycles are critical. The industrial -40 C to +85 C range covers clinical and field environments.
推荐
Networking Line Card Buffer
The RMLV0816BGSD-4S2 functions as a packet buffer in networking line cards, switches, and routers where deterministic read/write access matters more than peak density. The 8-Mbit capacity accommodates hundreds of small Ethernet frames or several large jumbo frames, while the 45 ns random access time keeps up with Gigabit line-rate forwarding at typical buffer-occupancy levels. The wide 16-bit data bus simplifies connection to network processors without multiplexers, and the industrial temperature range supports outdoor cabinet deployments. Compared to SDRAM alternatives, the LPSRAM requires no refresh controller, reducing firmware complexity and BOM cost.
推荐
POS Terminal and Retail Kiosk Memory
Retail POS terminals and self-service kiosks use the RMLV0816BGSD-4S2 to buffer transaction data, graphical UI assets, and printer spool buffers. The 512K x 16 organization efficiently stores bitmap fonts and UI frame buffers without address-decoding overhead. The 3.3 V single-supply operation aligns with mainstream ARM-based POS processors, and the 45 ns access keeps the user interface responsive. The byte-control pins (/LB, /UB) let designers use only the upper or lower byte when connecting to 8-bit peripheral buses, adding flexibility to legacy printer or scanner interfaces still found in retail equipment.
推荐
Factory Automation Sensor Hub
Sensor hubs in factory-automation systems aggregate data from multiple analog and digital sensors, and the RMLV0816BGSD-4S2 provides a deterministic scratchpad for sample buffering before forwarding to the central controller. Its 45 ns access time supports high-speed sensor polling at rates up to several hundred kHz per channel, while the wide data bus accommodates parallel ADC outputs without bottlenecks. The -40 C to +85 C operating range handles the thermal stress of cabinet-mounted industrial installations, and the LPSRAM low standby current supports battery-backed sensor nodes in wireless IIoT gateways. Renesas' Advanced LPSRAM process delivers proven long-term reliability in 24/7 factory environments.
推荐
Battery-Backed Data Logger
Battery-backed data loggers in remote telemetry, environmental monitoring, and asset-tracking systems rely on the RMLV0816BGSD-4S2 for non-volatile-like data retention during main-power loss. Combined with a small lithium backup cell or supercapacitor, the LPSRAM holds logged samples across power interruptions without the write-cycle wear of flash memory. The microamp-range standby current extends battery life into the multi-year range. The 8-Mbit density stores tens of thousands of timestamped samples, and the 45 ns access time supports burst-mode logging from low-power MCUs during active measurement windows.
推荐
推荐产品汇总
工程参考数据： RMLV0816BGSD-4S2 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | RMLV0816BGSD-5S2 | RMLV0816BGSD-7S2 | RMLV0816BGSD-4S2#AA1 | RMLV0816BGSD-4S2#AC0 | RMLV0816BGSD-4S2#HA1 |
|---|---|---|---|---|---|---|
| Package | 52-pin TSOP-II | 52-pin TSOP-II - same | 52-pin TSOP-II - same | 52-pin TSOP-II - same | 52-pin TSOP-II - same | 52-pin TSOP-II - same |
| Brand | Renesas Electronics | Renesas Electronics - same | Renesas Electronics - same | Renesas Electronics - same | Renesas Electronics - same | Renesas Electronics - same |
| Memory Density | 8 Mbit | 8 Mbit | 8 Mbit | 8 Mbit | 8 Mbit | 8 Mbit |
| Organization | 512K x 16-bit | 512K x 16-bit | 512K x 16-bit | 512K x 16-bit | 512K x 16-bit | 512K x 16-bit |
| Access Time | 45 ns | 55 ns | 70 ns | 45 ns | 45 ns | 45 ns |
| Supply Voltage | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Operating Temperature | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C |
| Packaging Format | Tape & Reel (suffix dependent) | Tape & Reel | Tape & Reel | Tape & Reel | Tray | Tape & Reel |
关键差异点
- Faster access time at same density （对比 RMLV0816BGSD-5S2)
- Lowest-cost speed grade for non-timing-critical systems （对比 RMLV0816BGSD-7S2)
- Standard packaging configuration （对比 RMLV0816BGSD-4S2#AC0)
设计说明
Decouple the VCC pins (pins 27 and 28) with a 0.1 uF ceramic capacitor placed within 5 mm of the package, plus a 10 uF bulk capacitor on the 3.3 V rail. The LPSRAM has fast edge transitions on the address and control lines; local high-frequency decoupling prevents supply ringing during bus cycles. A ferrite bead on the VCC trace can further reduce noise coupling into the analog sections of nearby ADCs.
Avoid driving the data bus during a write cycle. When /WE is asserted low, the device ignores the /OE signal and the I/O pins become inputs - any contention from a bus driver on the MCU side will cause high-current spikes and potential device damage. Always tri-state the MCU bus drivers or use a direction-control signal before asserting /WE. Confirm /CS1 is asserted (low) and CS2 is asserted (high) before any read or write cycle.
The 52-pin TSOP-II has a 0.5 mm lead pitch, requiring fine-pitch PCB layout. Use solder mask-defined (SMD) pads rather than non-solder mask defined (NSMD) for improved thermal fatigue resistance on industrial boards. Maintain a continuous ground plane beneath the device and route address and data signals on adjacent layers with matched impedance to avoid bus-timing skew at the 45 ns access time.
For designs running close to the 45 ns access limit, place a small damping resistor (10-22 ohm) in series with each address and control line near the SRAM to suppress transmission-line reflections on long traces. Keep trace lengths matched within 25 mm across the address bus to minimize address-skew-induced timing violations. The 16-bit I/O bus should be routed as a matched bus with stub lengths less than 5 mm.
合规信息
RoHS compliant per Renesas product page. Lead-free (Pb-free) reflow profile per JEDEC J-STD-020. AEC-Q100 not applicable - this is a memory IC not specifically qualified for automotive; consult Renesas automotive-grade part numbers if AEC-Q100 is required.
