SBRFP3M60SAFQ - 60V 3A SBR Field Plated Rectifier SMAF | Diodes Inc
Teilenummer: SBRFP3M60SAFQ ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0.42 | $0,42 |
| 10 | $0.36 | $3,60 |
| 100 | $0.27 | $27,00 |
| 500 | $0.22 | $110,00 |
| 1.000 | $0.18 | $180,00 |
| 10.000 | $0.14 | $1.400,00 |
SBRFP3M60SAFQ Übersicht
What is a Super Barrier Rectifier? An SBR is a proprietary second-generation Schottky rectifier structure that uses a MOSFET-like barrier instead of a metal-semiconductor junction. This architecture drops forward voltage (V_F) closer to that of a Schottky diode while keeping reverse leakage far below classic Schottky levels, and it survives automotive surge and avalanche stresses better than a planar Schottky. Within the discrete-semiconductor hierarchy, the SBR sits between standard rectifiers and active OR-ing controllers, and is the preferred passive-rail rectifier in automotive ECU, ADAS, and lighting power trees.
Key specifications include a 60 V repetitive peak reverse voltage (V_RRM), a 3 A average forward current (I_F(AV)), a typical V_F below 0.50 V at 3 A, and ultra-low reverse leakage measured in microamperes at the rated blocking voltage. The device is qualified to AEC-Q101, supports PPAP, and is manufactured in IATF 16949 certified facilities, with a maximum junction temperature of 175 °C and an MSL1 moisture sensitivity rating for robust PCB assembly.
Architecturally, the field-plated termination extends the depletion region across the die surface, suppressing edge leakage that dominates conventional Schottky reverse current. The result is a robust 60 V rating in the SMAF (approximately 3.6 mm × 2.8 mm) package that competes with larger SMA and SMB footprints while preserving a slim profile for dense automotive PCB layouts.
Typical applications include automotive load-dump-protected OR-ing between dual batteries, freewheeling diodes in 12 V/24 V motor and solenoid drivers, polarity protection in body-control modules, and high-efficiency rectification in LED headlamp boost converters. Industrial uses span 24 V bus protection, solar charge controllers, and eMobility auxiliary supplies.
When designing with this part, ensure the PCB land pattern follows the SMAF (DO-221AC-like) footprint and derate I_F using the package's thermal resistance curve above 75 °C ambient. The 60 V rating gives ample margin across 12 V (load-dump up to ~35 V) and 24 V industrial bus environments, but continuous conduction at 3 A into very low V_F loads still requires copper-pour thermal management.
This page synthesizes distributor pricing, AEC-Q101-qualified drop-in alternatives, and practical thermal/layout guidance not consolidated on the manufacturer's product brief.
Drop-in-Alternativen für SBRFP3M60SAFQ – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit SBRFP3M60SAFQ (gleiche Bauform und Footprint) – abweichend in Automotive Qualification, Configuration, Manufacturing Certification, Package.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
SBRFP3M60SAFQ-13
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
SBRFP2M60SAFQ
✅ Drop-In✓ Auf Lager
$0.19 / Stück
Datenblatt ansehen →SBRFP8A60P5Q
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
SBRFP2M60P1Q
✅ Drop-In✓ Auf Lager
$0.26 / Stück
Datenblatt ansehen →SBR3U60P1Q
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
SBRFP3M60SAFQ Grenzwerte & elektrische Eigenschaften
| Manufacturer | Diodes Incorporated |
| Product Series | SBR® Field Plated (SBRFP) |
| Device Type | Single Rectifier Diode (SBR) |
| Repetitive Peak Reverse Voltage (V_RRM) | 60 V |
| Average Rectified Forward Current (I_F(AV)) | 3 A |
| Betriebs-Sperrschichttemperaturbereich | -55 °C to +175 °C |
| Storage Temperature Range | -55 °C to +175 °C |
| Gehäuse / Bauform | SMAF (DO-221AC-like, surface mount) |
| Montageart | Surface Mount |
| Feuchtigkeitsempfindlichkeitsgrad (MSL) | MSL 1 (per JEDEC J-STD-020) |
| Automotive Qualification | AEC-Q101 qualified, PPAP capable |
| Quality Standard | Manufactured in IATF 16949 certified facilities |
| RoHS Compliance | Compliant |
| Configuration | Single diode, two-terminal |
| Polarity | Cathode band marked per SMAF convention |
SBRFP3M60SAFQ Pin-Konfiguration
| Pin 1 | Cathode (K) — Cathode terminal (band-marked) |
| Pin 2 | Anode (A) — Anode terminal |
Typische Anwendungen
SBRFP3M60SAFQ ist geeignet für 6 Anwendungs: Automotive ECU Power-Rail Rectification, 12 V / 24 V Solenoid and Motor Freewheeling, OR-ing Between Dual Batteries / Redundant Rails, LED Headlamp Boost-Converter Output Rectifier, Industrial 24 V Bus Polarity Protection, Solar Charge Controller Blocking Diode.
Automotive ECU Power-Rail Rectification
The SBRFP3M60SAFQ provides reverse-battery and reverse-polarity protection between the 12 V automotive bus and ECU power inputs. With its 60 V V_RRM and AEC-Q101 qualification, it survives 12 V load-dump transients up to 35 V while its ultra-low V_F minimizes dissipation at 3 A continuous load. Per the Diodes Incorporated datasheet, the SMAF footprint occupies roughly half the board area of an SMA-package part, allowing denser ECU layouts while keeping junction temperature below the 175 °C maximum.
Empfohlen
12 V / 24 V Solenoid and Motor Freewheeling
Inductive loads such as solenoids, relays, and small DC motors require freewheeling diodes to clamp back-EMF and protect upstream drivers. The SBRFP3M60SAFQ is rated for 60 V reverse voltage, providing substantial margin above the 24 V bus rail plus inductive overshoot, and its ultra-low reverse leakage keeps blocking-mode loss negligible. According to the datasheet, the 175 °C junction-temperature rating supports underhood and transmission-mounted designs where ambient temperature can exceed 125 °C.
Empfohlen
OR-ing Between Dual Batteries / Redundant Rails
The SBRFP3M60SAFQ functions as a passive OR-ing rectifier between two redundant supplies such as dual-battery eMobility systems or backup-capacitor banks. Its ultra-low V_F minimizes forward-conduction loss in the main path while the SBR architecture's low reverse leakage prevents back-feeding the depleted source. The 3 A rating suits auxiliary 12 V subsystems and the SMAF footprint allows high-density OR-ing layouts; AEC-Q101 qualification supports safety-critical automotive redundancy paths.
Empfohlen
LED Headlamp Boost-Converter Output Rectifier
In automotive LED headlamp boost or buck-boost converters, the SBRFP3M60SAFQ can serve as the output rectifier or freewheeling diode. With 60 V reverse-voltage headroom and ultra-low V_F, it improves driver efficiency versus standard Schottky diodes, reducing thermal stress on the LED PCB. The SMAF low-profile package fits behind lamp lenses with strict height constraints; AEC-Q101 / PPAP support is mandatory for headlamp programs requiring automotive change-control documentation.
Empfohlen
Industrial 24 V Bus Polarity Protection
Industrial 24 V field buses, PLC inputs, and sensor supplies benefit from the SBRFP3M60SAFQ as a polarity-protection rectifier at the connector input. The 60 V rating tolerates 24 V plus typical ±40 V transient bursts, while the 3 A continuous rating supports multi-sensor loads. According to the manufacturer datasheet, the SBRFP architecture's low reverse leakage reduces quiescent loss versus Schottky diodes that would otherwise draw milliamps in blocking mode, which is critical for battery-backed or energy-harvested installations.
Empfohlen
Solar Charge Controller Blocking Diode
In small solar charge controllers and off-grid renewable systems, the SBRFP3M60SAFQ acts as a blocking diode between the panel and the battery to prevent reverse current at night. Its ultra-low V_F maximizes energy harvest compared to traditional PN-junction rectifiers, while low reverse leakage avoids draining the battery through the panel in low-light conditions. The 60 V reverse rating covers typical 12 V/24 V panel open-circuit voltages with margin, and the SMAF package supports compact IP-rated enclosures.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für SBRFP3M60SAFQ – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | SBRFP3M60SAFQ-13 | SBRFP2M60SAFQ | SBRFP8A60P5Q | SBRFP2M60P1Q | SBR3U60P1Q |
|---|---|---|---|---|---|---|
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Package | SMAF | SMAF - same | PowerDI5 (different footprint) | SMAF - same | PowerDI123 (different footprint) | PowerDI123 (different footprint) |
| V_RRM (V) | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V |
| I_F(AV) (A) | 3 A | 3 A | 2 A | 8 A | 2 A | 3 A |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | Yes | Yes |
| PPAP Capable | Yes | Yes | Yes | Yes | Yes | Yes |
| Architecture | SBR Field Plated (SBRFP) | SBRFP - same | SBRFP - same | SBRFP - same | SBRFP - same | SBR (standard, not field-plated) |
| Operating Junction Temp | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +175 °C |
Wichtigste Unterscheidungsmerkmale
- Ultra-low reverse leakage versus comparable Schottky diodes (vs. Generic 60 V 3 A SMA-package Schottky (e.g. B360A-series))
- Lower-profile SMAF footprint versus SMA (vs. Standard SMA-package rectifier)
- Same-family higher-current option available in identical footprint (vs. SBRFP2M60SAFQ (2 A in PowerDI5))
Designhinweise
Estimated: at I_F = 3 A with V_F ≈ 0.50 V and a PCB copper-pour thermal resistance near 60 °C/W on the SMAF footprint, junction-to-ambient rise is roughly 90 °C above ambient. Keep the SMAF land-pad copper area to at least 100 mm² on the cathode side, and derate I_F using the datasheet's thermal-resistance curve above 75 °C ambient. In sealed automotive housings where ambient reaches 105 °C, expect continuous conduction current below the 3 A rating.
Follow the manufacturer-recommended SMAF land pattern exactly. Per the Diodes Incorporated datasheet, the cathode pad should be the larger copper pour to maximize heat spreading, while the anode pad may be reduced to match the smaller pin. Keep the trace between the diode and the upstream fuse/MOSFET short to limit series inductance during surge events, and use the standard SMAF reflow profile (peak ≤ 260 °C, 30 s above 250 °C).
Do not assume the SBRFP3M60SAFQ is a Schottky diode - the V_F vs I_F curve differs and reverse leakage is far lower than a comparable 60 V Schottky. Avoid paralleling multiple SMAF parts without ballast resistors; the positive temperature coefficient of V_F in SBRFP architecture helps paralleling, but PCB asymmetry can still cause imbalance. For AEC-Q101 programs, always request the PPAP package from the authorized distributor and verify the lot's change-control documentation matches the datasheet revision.
Compliance-Informationen
AEC-Q101 qualified (not AEC-Q100 - AEC-Q101 is the discrete-semiconductor automotive standard); PPAP capable; manufactured in IATF 16949 certified facilities per Diodes Incorporated datasheet
