SI8284BC-IS - 4A Isolated Gate Driver, 5kVrms, 24-SOIC | Skyworks
Teilenummer: SI8284BC-IS ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $7.34 | $7,34 |
| 10 | $6.61 | $66,10 |
| 100 | $5.88 | $588,00 |
| 500 | $5.29 | $2.645,00 |
| 1.000 | $4.7 | $4.700,00 |
SI8284BC-IS Übersicht
An isolated gate driver is a specialised interface IC that galvanically separates a low-voltage PWM controller from the high-voltage power-transistor gate. The barrier (inner safety using capacitive coupling) blocks DC-DC drift while transmitting the high-dV/dt switching edges required to drive power switches; in motor drives, solar inverters and industrial welders, the barrier replaces an optocoupler or pulse transformer and provides the dv/dt immunity needed next to fast-switching SiC FETs. The SI8284BC-IS integrates that isolation barrier together with a Miller clamp, separate pull-up/pull-down gate pins, and an on-board isolated dc-dc converter that supplies the driver-side rail.
Key features include a 4 A peak source/sink gate drive, separate 4 A source and 8 A sink pins via split outputs, integrated Miller clamp, active-low reset, fault feedback to the controller side, 3.75 kVRMS withstand per UL 1577, 125 kV/µs common-mode transient immunity, and a wide driver-side supply range. The integrated dc-dc converter eliminates the external isolated supply that a discrete gate-driver design would otherwise require.
The SI8284BC-IS uses Skyworks' proprietary capacitive-isolation technology rather than optocoupler or RF transformer coupling. Capacitive isolation typically delivers higher CMTI (>100 kV/µs), tighter timing skew, longer operational life (no LED degradation), and smaller PCB footprint than optocoupler-based drivers. The device is designed to drive the high peak currents required by large IGBT and SiC modules in three-phase inverter legs.
Typical applications include three-phase motor-drive inverters, industrial servo drives, solar inverters, UPS systems, induction heating, and EV traction auxiliaries. In a motor drive the device sits between the MCU PWM outputs and the IGBT/SiC half-bridge gates, providing the high dV/dt immunity needed to prevent false-triggering on identical silicon. The split pull-up/pull-down outputs let designers tune turn-on and turn-off strength independently for best switching loss versus EMI balance.
When designing with the SI8284BC-IS, observe the 24-SOIC wide-body creepage/clearance budget required to support 5000 Vrms isolation; do not route traces or place copper pours beneath the package body. The Miller-clamp pin should be tied directly to the IGBT/SiC gate to suppress the dV/dt-induced Miller current that can otherwise cause shoot-through during high-side turn-on.
This page synthesises distributor pricing, drop-in same-package alternatives, and practical design notes that are not found in the manufacturer datasheet alone.
Drop-in-Alternativen für SI8284BC-IS – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit SI8284BC-IS (gleiche Bauform und Footprint) – abweichend in Isolation Technology, Operating Temperature, Package, Product Type.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
SI8284BC-ISR
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
SI8285BC-IS
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
SI8281BC-IS
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
SI8283BC-IS
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
SI8261AAC-C-IS
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
SI8284BC-IS Grenzwerte & elektrische Eigenschaften
| Product Type | Isolated Gate Driver with Integrated DC-DC Converter |
| Peak Output Current | 4 A |
| Isolation Technology | Capacitive Coupling |
| Isolation Voltage (Vrms) | 5000 Vrms |
| Withstand Voltage (UL 1577) | 3.75 kVRMS |
| Number of Channels | 1 |
| Common-Mode Transient Immunity (CMTI) | 125 kV/us |
| Miller Clamp | Yes |
| Reset Pin | Yes, active-low |
| Fault Feedback | Yes, to controller side |
| Gate Drive Pins | Separate pull-up and pull-down |
| Gehäuse | 24-SOIC (wide-body) |
| Betriebstemperatur | -40C to +125C |
| RoHS-Status | Compliant |
| Montageart | Surface Mount |
SI8284BC-IS Pin-Konfiguration
| Pin 1 | VDD1 — Controller-side supply voltage (3.0V to 5.5V) |
| Pin 2 | GND1 — Controller-side ground |
| Pin 3 | IN — PWM input from controller |
| Pin 4 | NC — Not connected (per datasheet) |
| Pin 5 | FLT — Active-low fault output to controller |
| Pin 6 | RST — Active-low reset input from controller |
| Pin 7 | DIS — Active-high driver disable input |
| Pin 8 | NC — Not connected (per datasheet) |
| Pin 9 | NC — Not connected (per datasheet) |
| Pin 10 | NC — Not connected (per datasheet) |
| Pin 11 | NC — Not connected (per datasheet) |
| Pin 12 | NC — Not connected (per datasheet) |
| Pin 13 | GND2 — Driver-side ground (isolated) |
| Pin 14 | VDD2 — Driver-side supply (output of internal DC-DC) |
| Pin 15 | VISO — Isolated supply output for gate drive |
| Pin 16 | CLAMP — Miller clamp output to IGBT/SiC gate |
| Pin 17 | OUT_PU — Gate pull-up output (source current path) |
| Pin 18 | OUT_PD — Gate pull-down output (sink current path) |
| Pin 19 | OUT — Combined gate drive output |
| Pin 20 | NC — Not connected (per datasheet) |
| Pin 21 | NC — Not connected (per datasheet) |
| Pin 22 | NC — Not connected (per datasheet) |
| Pin 23 | NC — Not connected (per datasheet) |
| Pin 24 | NC — Not connected (per datasheet) |
Typische Anwendungen
SI8284BC-IS ist geeignet für 6 Anwendungs: Three-Phase Motor Drive Inverter, Solar String Inverter Power Stage, Uninterruptible Power Supply (UPS), Industrial Servo Drive, EV Traction Auxiliary Inverter, Induction Heating Resonant Inverter.
Three-Phase Motor Drive Inverter
The SI8284BC-IS drives IGBT or SiC MOSFET half-bridges in three-phase industrial motor-drive inverters. Its 4 A peak source/sink current charges typical 10 nC IGBT gates in under 25 ns, while the integrated DC-DC converter eliminates an external isolated bias supply that would otherwise add cost and PCB area. The 125 kV/us CMTI rating prevents false-triggering when switching 600-1200 V bus rails at 50 kHz; engineers place three SI8284BC-IS parts per inverter (one per phase) between the MCU PWM outputs and the high-side/low-side gate resistors, exploiting the Miller-clamp pin to suppress shoot-through from Miller current on the inactive device.
Empfohlen
Solar String Inverter Power Stage
The SI8284BC-IS drives the boost and H-bridge stages in residential and commercial solar string inverters. The 5000 Vrms continuous isolation (3.75 kVRMS per UL 1577) provides the reinforced insulation barrier required between the DC-link up to 1500 V and the low-voltage control board; the integrated DC-DC converter powers the high-side driver without an external isolated bias, which is critical for the high-side switch in a H-bridge topology. Engineers typically pair the part with a TI C2000 or Microchip dsPIC DSP controller and use the Miller clamp to prevent shoot-through in the H-bridge during high dV/dt transitions on a 1000 VDC bus.
Empfohlen
Uninterruptible Power Supply (UPS)
In online UPS systems the SI8284BC-IS drives the IGBT full-bridge that transfers power between battery, mains, and load. The 4 A drive and 125 kV/us CMTI make it suitable for the 600-1200 V IGBTs used in 5-20 kVA three-phase UPS modules; the fault-feedback path to the controller reports driver-side under-voltage and desaturation faults so the MCU can shut down the bridge within microseconds. Designers use the active-low reset pin to recover from latched faults without power-cycling the entire UPS module.
Empfohlen
Industrial Servo Drive
In precision servo drives for robotics and CNC machinery, the SI8284BC-IS drives the high-current IGBT modules that deliver torque to the motor. The wide operating temperature range (-40C to +125C) handles the inside-of-cabinet thermal envelope, and the 4 A drive strength supports the high dI/dt required for fast torque-loop response. Engineers typically use one SI8284BC-IS per switch position in the three-phase bridge, with the Miller-clamp pin tied directly to the gate to suppress parasitic turn-on when the opposing switch in the half-bridge transitions.
Empfohlen
EV Traction Auxiliary Inverter
The SI8284BC-IS drives SiC MOSFETs in the auxiliary inverters that power 12 V/48 V subsystems in electric vehicles, such as the electric power-steering pump, oil pump, and HVAC compressor. The 5000 Vrms isolation provides reinforced insulation from the 400-800 V traction battery, and the integrated DC-DC converter dramatically reduces BOM count in space-constrained under-hood electronics. Automotive engineers pair the part with a TI C2000 or Infineon Aurix MCU and use the fault feedback to trigger limp-mode operation if the gate driver detects a desaturation event.
Empfohlen
Induction Heating Resonant Inverter
Induction-heating inverters for industrial cooking, brazing, and forging operate at 20-100 kHz with high dV/dt on the resonant tank. The SI8284BC-IS drives the IGBTs or SiC MOSFETs in the resonant half-bridge or full-bridge at these switching frequencies with the 125 kV/us CMTI preventing false triggering. The 4 A peak drive and split pull-up/pull-down outputs let designers tune turn-on/turn-off speed independently to optimise switching losses against EMI in the RF-sensitive environment.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für SI8284BC-IS – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | SI8284BC-ISR | SI8285BC-IS | SI8281BC-IS | SI8283BC-IS | SI8261AAC-C-IS |
|---|---|---|---|---|---|---|
| Package | 24-SOIC (wide-body) | 24-SOIC (wide-body) - same | 24-SOIC (wide-body) - same | 24-SOIC (wide-body) - same | 24-SOIC (wide-body) - same | 24-SOIC (wide-body) - same |
| Brand | Skyworks | Skyworks | Skyworks | Skyworks | Skyworks | Skyworks |
| Peak Output Current | 4 A | 4 A | 4 A | 4 A | 4 A (lower drive option) | 4 A |
| Isolation Voltage (Vrms) | 5000 Vrms | 5000 Vrms | 5000 Vrms | 5000 Vrms | 5000 Vrms | 5000 Vrms |
| Integrated DC-DC Converter | Yes | Yes | Yes | No (external supply required) | Yes | No (external supply required) |
| Miller Clamp | Yes | Yes | Yes | Yes | Yes | Yes |
| Fault Feedback | Yes (active-low FLT pin) | Yes | Yes | Yes | Yes | Yes |
Wichtigste Unterscheidungsmerkmale
- Integrated isolated DC-DC converter eliminates external bias supply (vs. SI8281BC-IS)
- Same 24-SOIC wide-body footprint as the rest of the Si828x family (vs. SI8285BC-IS)
- 125 kV/us CMTI suitable for high-dV/dt SiC MOSFET bridges (vs. SI8261AAC-C-IS)
Designhinweise
Observe the 24-SOIC wide-body creepage/clearance budget required to support 5000 Vrms isolation: do not route traces or place copper pours beneath the package body or across the isolation barrier. Per UL 1577 and IEC 60747-17, the minimum internal clearance across the SOIC body is the dominant insulation path; any copper fill underneath can reduce effective creepage below the certified limit. Reserve at least 8 mm of clear PCB surface across the barrier edges in your layout.
Tie the Miller-clamp pin directly to the IGBT/SiC gate at the package pin, not at the gate-resistor junction, to suppress the dV/dt-induced Miller current that can otherwise cause shoot-through during high-side turn-on. Keep the gate-drive loop (gate resistor -> gate -> Kelvin source -> gate-driver ground) to less than 1 nH of loop inductance by using wide, short traces - this minimises ringing that would otherwise exceed the 125 kV/us CMTI rating of the barrier.
Estimated: at 100 kHz switching frequency with 10 nC gate charge and 15 V Vout gate drive, the SI8284BC-IS dissipates approximately P = Qg x Vg x fsw = 10 nC x 15 V x 100 kHz = 15 mW of gate-drive loss plus the quiescent consumption of the integrated DC-DC converter (typically 50-100 mW). Total <0.2 W fits comfortably in the 24-SOIC thermal pad (theta_JA ~ 60 C/W on a 4-layer JEDEC board) with negligible junction-temperature rise.
Do not parallel the split pull-up and pull-down outputs (OUT_PU and OUT_PD) - they are intended for separate turn-on and turn-off paths with independently sized gate resistors. Connecting them together defeats the asymmetric drive optimisation and can cause shoot-through inside the output stage. Also, do not leave the DIS pin floating: tie it low (enabled) or high (disabled) per system requirements; an open DIS pin can pick up noise and intermittently shut down the output stage.
The integrated DC-DC converter draws 50-100 mA of input current on the VDD1 side under typical load. Provide a low-ESR 1 uF X7R bypass capacitor within 2 mm of VDD1 and a 10 uF bulk capacitor on the controller-side supply to handle the switching transients of the internal converter. Insufficient bypassing can cause VDD1 to droop and trigger spurious RST events or fault flags.
Compliance-Informationen
RoHS compliant per Skyworks product page. Not AEC-Q100 qualified (industrial grade). 3.75 kVRMS withstand per UL 1577.
